US4061799A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of patterning styrene diene block copolymer electron beam resists
Assignee: Texas Instruments Inc
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Filing: 1975-09-22
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Granted: 1977-12-06
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Expires: 1995-09-22
Abstract
Abstract Disclosed is a method of forming patterned electron beam resists from styrene-diene block copolymers and the resists formed thereby. A thin film of a styrene-diene block copolymer is applied to a support and is subjected to an electron beam scan. An electron beam irradiates a portion of the copolymer film according to a programmed pattern; the copolymer cross links where irradiated, thus causing the irradiated portion of the copolymer to become insoluble in a solvent. The balance of the copolymer remains soluble in the solvent, dissolves and is removed, resulting in the desired pattern of openings.
Inventors
- 👤 Terry L. Brewer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:47
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
120 words
The method of forming a patterned negative high energy beam resist, comprising the steps of: a. forming a thin film of a styrene-diene block copolymer on a support; b. scanning said thin film with a high energy beam in a predetermined pattern requiring resolutions of less than 1 micron at a speed of at least 5 × 10 -6 coulombs per cm 2 to cause the irradiated portion of said copolymer to cross link where irradiated by said high energy beam; and, c. dissolving the uncross linked portion of said copolymer with a solvent which dissolves and removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support with openings in a desired pattern.
Claim 2
Independent Claim
120 words
The method of forming a patterned negative high energy beam resist, comprising the steps of: a. forming a thin film of a styrene-diene block copolymer on a support; b. scanning said thin film with a high energy beam in a predetermined pattern requiring resolutions of less than 1 micron at a speed of at least 5 × 10 -6 coulombs per cm 2 to cause the irradiated portion of said copolymer to cross link where irradiated by said high energy beam; and, c. dissolving the uncross linked portion of said copolymer with a solvent which dissolves and removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support with openings in a desired pattern.
Claim 3
Dependent Claim
38 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said copolymer is a styrene diene with the carbon atoms between olefin groups of the diene numbering between 0 to 3.
Claim 4
Dependent Claim
21 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said copolymer is styrene-butadiene.
Claim 5
Dependent Claim
22 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said copolymer is styrene diene.
Claim 6
Dependent Claim
25 words
The method of forming a patterned negative high energy beam resist, as defined in claim 3, wherein said high energy beam is an electron beam.
Claim 7
Independent Claim
147 words
The method of forming a negative electron beam resist, comprising the steps of: a. mixing a styrene diene block copolymer having an average molecular weight of between 10,000 and 500,000 with sufficient aromatic solvent to produce a solution; b. placing said solution on a support; c. drying said solution to remove said solvent, thereby leaving a thin styrene-diene copolymer film on said support; d. scanning said thin film with an electron beam in a predetermined pattern requiring resolutions of at least 0.7 microns of at least 5 × 10 -6 coulombs/cm 2 to cause the irradiated portion of said copolymer to cross link where irradiated by said electron beam; and, e. dissolving the said uncross linked portion of said copolymer with a solvent which removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support, with openings in a desired pattern.
Claim 8
Independent Claim
147 words
The method of forming a negative electron beam resist, comprising the steps of: a. mixing a styrene diene block copolymer having an average molecular weight of between 10,000 and 500,000 with sufficient aromatic solvent to produce a solution; b. placing said solution on a support; c. drying said solution to remove said solvent, thereby leaving a thin styrene-diene copolymer film on said support; d. scanning said thin film with an electron beam in a predetermined pattern requiring resolutions of at least 0.7 microns of at least 5 × 10 -6 coulombs/cm 2 to cause the irradiated portion of said copolymer to cross link where irradiated by said electron beam; and, e. dissolving the said uncross linked portion of said copolymer with a solvent which removes the uncross linked copolymer, thereby leaving said cross linked portion of said copolymer on said support, with openings in a desired pattern.
Claim 9
Dependent Claim
21 words
The method of forming a negative electron beam resist, as defined in claim 6, wherein said copolymer is styrene-butadiene block copolymer.
Claim 10
Dependent Claim
21 words
The method of forming a negative electron beam resist, as defined in claim 6, wherein said copolymer is styrene-diene block copolymer.
References Cited (Backward Citations)
US3674486A
Cited
US3794510A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-05 | 1981-06-06 | 1981-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-05 | 1985-06-06 | 1985-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-05 | 1989-06-06 | 1989-12-06 | $7700.00 | Window Closed / Lapsed |