Transistor amplifiers

Claim 2

In a transistor amplifier including: first and second transistors of the same conductivity type, both fabricated from the same basic semiconductor material and operated at substantially the same absolute temperature T, each having base and emitter and collector electrodes, each having a base-emitter junction between its base and emitter electrodes, each having a collector-base junction between its collector and base electrodes; first and second resistances exhibiting similar coefficients of change with change in temperature and being operated at substantially said absolute temperature T; said first resistance having a first end connected to the emitter electrode of said first transistor and having a second end, and said second resistance having a first end connected to the emitter electrode of said second transistor and having a second end; an interconnection of the second ends of said first and said second resistances; means for applying substantially the same quiescent potentials to the base electrodes of said first and said second transistors, of a polarity respective to a potential at said interconnection for forward-biasing the base-emitter junction of said first and said second transistors; means for applying a quiescent potential to the collector electrode of said first transistor to condition it for normal transistor operation; and means for applying a quiescent potential to the collector electrode of said second transistor to condition it for normal transistor operation, an improvement for controlling the ratio between the collector currents of the first and second transistors substantially independently of temperature in the operating temperature range of said first and second transistors which improvement comprises: means for developing across said first resistance a potential drop linearly proportional to T in the operating temperature range of said first and second transistors; means for developing across said second resistance a potential drop linearly proportional to T in the operating temperature range of said first and second transistors; and means for adjusting at least one of the potential drops across said first and second resistances relative to the other.

Claim 3

In a transistor amplifier including: first and second transistors of the same conductivity type, both fabricated from the same basic semiconductor material and operated at substantially the same absolute temperature T, each having base and emitter and collector electrodes, each having a base-emitter junction between its base and emitter electrodes, each having a collector-base junction between its collector and base electrodes; first and second resistances exhibiting similar coefficients of change with change in temperature and being operated at substantially said absolute temperature T; said first resistance having a first end connected to the emitter electrode of said first transistor and having a second end, and said second resistance having a first end connected to the emitter electrode of said second transistor and having a second end; an interconnection of the second ends of said first and said second resistances; means for applying substantially the same quiescent potentials to the base electrodes of said first and said second transistors, of a polarity respective to a potential at said interconnection for forward-biasing the base-emitter junction of said first and said second transistors; means for applying a quiescent potential to the collector electrode of said first transistor to condition it for normal transistor operation; and means for applying a quiescent potential to the collector electrode of said second transistor to condition it for normal transistor operation; third and fourth substantially temperature-independent resistances, having respective first ends respectively connected to separate ones of the first ends of said first and said second resistances and having respective second ends, at least one of which third and fourth resistances is adjustable, for adjusting the relative collector currents of said first and said second transistors; and an interconnection of the second ends of said third and said fourth resistances, the improvement comprising: means applying a potential, which potential changes in proportion to the change in the absolute temperature T at which said first and said second transistors are operated, between said interconnection of the second ends of said first and said second resistances and said interconnection of the second ends of said third and said fourth resistances for reducing the temperature dependence of the adjustment of the relative values of the collector currents of said first and said second transistors.

Claim 4

In a transistor amplifier including: first and second transistors of the same conductivity type, both fabricated from the same basic semiconductor material and operated at substantially the same absolute temperature T, each having base and emitter and collector electrodes, each having a base-emitter junction between its base and emitter electrodes, each having a collector-base junction between its collector and base electrodes; first and second resistances exhibiting similar coefficients of change with change in temperature and being operated at substantially said absolute temperature T; said first resistance having a first end connected to the emitter electrode of said first transistor and having a second end, and said second resistance having a first end connected to the emitter electrode of said second transistor and having a second end; an interconnection of the second ends of said first and said second resistances; means for applying substantially the same quiescent potentials to the base electrodes of said first and said second transistors, of a polarity respective to a potential at said interconnection for forward-biasing the base-emitter junction of said first and said second transistors; means for applying a quiescent potential to the collector electrode of said first transistor to condition it for normal transistor operation; and means for applying a quiescent potential to the collector electrode of said second transistor to condition it for normal transistor operation; third and fourth substantially temperature-independent resistances, having respective first ends respectively connected to separate ones of the first ends of said first and said second resistances and having respective second ends, at least one of which third and fourth resistances is adjustable, for adjusting the relative collector currents of said first and said second transistors; and an interconnection of the second ends of said third and said fourth resistances, the improvement comprising: means applying a potential, which potential changes in proportion to the change in the absolute temperature T at which said first and said second transistors are operated, between said interconnection of the second ends of said first and said second resistances and said interconnection of the second ends of said third and said fourth resistances for reducing the temperature dependence of the adjustment of the relative values of the collector currents of said first and said second transistors.

Claim 5

An improved transistor amplifier as set forth in claim 2 wherein said first and said second resistances have substantially zero coefficients of change with temperature change and wherein said means applying a potential applies a potential which is linearly proportional to the absolute temperature T at which said first and said second transistors are operated.

Claim 6

In a transistor amplifier including: first and second transistors of the same conductivity type, both fabricated from the same basic semiconductor material and operated at substantially the same absolute temperature T, each having base and emitter and collector electrodes, each having a base-emitter junction between its base and emitter electrodes, each having a collector-base junction between its collector and base electrodes; first and second resistances exhibiting similar coefficients of change with change in temperature and being operated at substantially said absolute temperature T, said first resistance having a first end connected to the emitter electrode of said first transistor and having a second end, and said second resistance having a first end connected to the emitter electrode of said second transistor and having a second end; an interconnection of the second ends of said first and said second resistances; means for applying substantially the same quiescent potentials to the base electrodes of said first and said second transistors, of a polarity respective to a potential at said interconnection for forward-biasing the base-emitter junction of said first and said second transistors; means for applying a quiescent potential to the collector electrode of said first transistor to condition it for normal transistor operation; means for applying a quiescent potential to the collector electrode of said second transistor to condition it for normal transistor operation; and a potentiometer, having a resistive body between first and second end terminals respectively connected to the first end of said first resistance and to the first end of said second resistance and having an adjustable tap-point terminal on its resistive body, whereby the setting of said tap-point terminals adjusts the relative values of the collector currents of said first and said second transistors, the improvement comprising: means applying a potential, which potential changes in proportion to the change in the absolute temperature T at which said first and said second transistors are operated, between said interconnection and said adjustable tap-point terminal, for reducing the temperature dependency of the adjustment of the relative values of the collector currents of said first and said second transistors.

Claim 7

In a transistor amplifier including: first and second transistors of the same conductivity type, both fabricated from the same basic semiconductor material and operated at substantially the same absolute temperature T, each having base and emitter and collector electrodes, each having a base-emitter junction between its base and emitter electrodes, each having a collector-base junction between its collector and base electrodes; first and second resistances exhibiting similar coefficients of change with change in temperature and being operated at substantially said absolute temperature T, said first resistance having a first end connected to the emitter electrode of said first transistor and having a second end, and said second resistance having a first end connected to the emitter electrode of said second transistor and having a second end; an interconnection of the second ends of said first and said second resistances; means for applying substantially the same quiescent potentials to the base electrodes of said first and said second transistors, of a polarity respective to a potential at said interconnection for forward-biasing the base-emitter junction of said first and said second transistors; means for applying a quiescent potential to the collector electrode of said first transistor to condition it for normal transistor operation; means for applying a quiescent potential to the collector electrode of said second transistor to condition it for normal transistor operation; and a potentiometer, having a resistive body between first and second end terminals respectively connected to the first end of said first resistance and to the first end of said second resistance and having an adjustable tap-point terminal on its resistive body, whereby the setting of said tap-point terminals adjusts the relative values of the collector currents of said first and said second transistors, the improvement comprising: means applying a potential, which potential changes in proportion to the change in the absolute temperature T at which said first and said second transistors are operated, between said interconnection and said adjustable tap-point terminal, for reducing the temperature dependency of the adjustment of the relative values of the collector currents of said first and said second transistors.

Claim 8

An improved transistor amplifier as set forth in claim 4 wherein said first and said second resistances and the resistance of the resistive body of said potentiometer each have a substantially zero coefficient of change with temperature change and wherein said means applying a potential applies a potential which is linearly proportional to the absolute temperature T at which said first and said second transistors are operated.