US4053294A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low stress semiconductor wafer carrier and method of manufacture
Assignee: California Quartzware Corp
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Filing: 1976-05-19
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Granted: 1977-10-11
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Expires: 1996-05-19
Abstract
Abstract A semiconductor boat or carrier fabricated of stress relieved quartz bar having a rectangular cross section. The carrier has parallel elongate side bars and a parallel elongate lower bar, all of which are joined at the ends thereof by transverse lengths of quartz bar also having rectangular cross section. Spaced slots are formed in the inwardly facing edges of the elongate side and bottom bars so that groups of three slots, one in each bar, lie in parallel planes for receiving semiconductor wafers in three point contact in the carrier. End bars attached to and extending between the side bars and central bars extending between each of the side bars and the bottom bar are provided for obtaining rigidity in the carrier. These end and central bars are also rectangular in cross section. The method includes stress relieving a quartz billet, cutting the quartz billet into elongate quartz bars having rectangular cross section, welding the elongate bars in spaced parallel relation to form an open ended cradle and plunge cutting spaced slots simultaneously in both side bars and the bottom bar. Subsequent attachment of end bars extending between the ends of the side bars provides rigidity.
Inventors
- 👤 John E. Sullivan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:21
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/10; H10P72/13; C; C03; C03B; C03B23/00; C03B23/20; C03B23/207; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4587; C30; C30B; C30B31/00; C30B31/06; C30B31/14; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49789; Y10T29/49798
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
150 words
A method of fabricating a dimensionally stable carrier for planar semiconductor wafers during high temperature wafer processing, comprising the steps of stress relieving a raw quartz billet, cutting the quartz billet into elongate bars having rectangular cross section, welding the elongate bars in spaced parallel relation to a cross memeber therebetween at each end thereof, so that an open ended cradle is formed with two side bars and one bottom bar, cutting a plurality of inwardly facing transverse slots simultaneously in the side bars and bottom bar, whereby groups of three of the transverse slots lie in parallel planes adapted to receive the edges of the wafers for three point suspension thereof, and welding lengths of the elongate bars across the open ends of the cradle thereby reinforcing the carrier structure, whereby dimensional shift in the assembled elongate bars at high temperature due to bar internal stress relief is reduced.
Claim 2
Independent Claim
150 words
A method of fabricating a dimensionally stable carrier for planar semiconductor wafers during high temperature wafer processing, comprising the steps of stress relieving a raw quartz billet, cutting the quartz billet into elongate bars having rectangular cross section, welding the elongate bars in spaced parallel relation to a cross memeber therebetween at each end thereof, so that an open ended cradle is formed with two side bars and one bottom bar, cutting a plurality of inwardly facing transverse slots simultaneously in the side bars and bottom bar, whereby groups of three of the transverse slots lie in parallel planes adapted to receive the edges of the wafers for three point suspension thereof, and welding lengths of the elongate bars across the open ends of the cradle thereby reinforcing the carrier structure, whereby dimensional shift in the assembled elongate bars at high temperature due to bar internal stress relief is reduced.
Claim 3
Independent Claim
181 words
A method of fabricating a high temperature semiconductor wafer carrier comprising the steps of heat treating a raw quartz billet to remove internal stress therefrom, submerging the stress relieved billet in a cooling liquid, cutting the submerged stress relieved billet into elongate bars having rectangular cross section, aligning two of the elongate bars in spaced parallel relation in one plane and another of the elongate bars parallel to the two bars displaced from the one plane, fixing the three parallel bars in relative position by welding portions of the elongate bars between the ends of each of the two elongate bars and the end of the other elongate bar, cutting simultaneously a plurality of slots adapted to receive the edges of the wafer on the inwardly facing portions of the parallel elongate bars so that groups of three of the slots are in parallel planes transverse to the parallel elongate bars, and welding lengths of the elongate bar between the ends of the two bars in the one plane, thereby providing rigidity in the carrier and dimensional stability at elevated temperatures.
Claim 4
Independent Claim
181 words
A method of fabricating a high temperature semiconductor wafer carrier comprising the steps of heat treating a raw quartz billet to remove internal stress therefrom, submerging the stress relieved billet in a cooling liquid, cutting the submerged stress relieved billet into elongate bars having rectangular cross section, aligning two of the elongate bars in spaced parallel relation in one plane and another of the elongate bars parallel to the two bars displaced from the one plane, fixing the three parallel bars in relative position by welding portions of the elongate bars between the ends of each of the two elongate bars and the end of the other elongate bar, cutting simultaneously a plurality of slots adapted to receive the edges of the wafer on the inwardly facing portions of the parallel elongate bars so that groups of three of the slots are in parallel planes transverse to the parallel elongate bars, and welding lengths of the elongate bar between the ends of the two bars in the one plane, thereby providing rigidity in the carrier and dimensional stability at elevated temperatures.
Claim 5
Dependent Claim
53 words
The method of claim 2 together with the step of welding lengths of the elongate bar between a central location on each of the two elongate bars in one plane and the central location on the other elongate bar, whereby additional rigidity is obtained and susceptibility to "sag" at elevated temperature is reduced.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-10-10 | 1981-04-11 | 1981-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-10-10 | 1985-04-11 | 1985-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-10-10 | 1989-04-11 | 1989-10-11 | $7700.00 | Window Closed / Lapsed |