US4049522A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low coercivity iron-silicon material, shields, and process
Assignee: International Business Machines Corp
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Filing: 1976-02-26
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Granted: 1977-09-20
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Expires: 1996-02-26
Abstract
Abstract Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250° C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in 2 .
Inventors
- 👤 Norman George Ainslie
- 👤 Robert Douglas Hempstead
- 👤 Swie-In Tan
- 👤 Erich Philipp Valstyn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:42
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/14; H01F10/00; H01F10/08; H01F10/10; H01F10/12; H01F10/14; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/4902; Y10T29/49021; Y10T29/49032; Y10T29/49036; Y10T29/49043; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12597; Y10T428/12604
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
174 words
A substrate having deposited thereon a thin film of iron-silicon made by the process comprising the steps of: placing a substrate upon the anode of an R.F. sputtering chamber, placing a target of iron-silicon containing about 4% to 7% silicon upon the cathode of said sputtering chamber, spacing said cathode and said anode about 1/2 inch to 2 inches apart, impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering material from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than 1/2 micron upon the said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, and maintaining a temperature at the anode above 250° C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns, stopping the deposition of iron-silicon upon said substrate by removing potential from said target and said substrate after a layer of iron-silicon has been deposited upon said substrate.
Claim 2
Dependent Claim
174 words
A substrate having deposited thereon a thin film of iron-silicon made by the process comprising the steps of: placing a substrate upon the anode of an R.F. sputtering chamber, placing a target of iron-silicon containing about 4% to 7% silicon upon the cathode of said sputtering chamber, spacing said cathode and said anode about 1/2 inch to 2 inches apart, impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering material from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than 1/2 micron upon the said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, and maintaining a temperature at the anode above 250° C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns, stopping the deposition of iron-silicon upon said substrate by removing potential from said target and said substrate after a layer of iron-silicon has been deposited upon said substrate.
Claim 3
Dependent Claim
237 words
A process for manufacturing a substrate having deposited thereon an iron-silicon magnetic thin film coating comprising the steps of: placing a substrate upon the anode of an R.F. sputtering chamber, placing a target of iron-silicon containing 4% to 7% silicon upon the cathode of said sputtering chamber, spacing said cathode and said anode about 1/2 inch to 2 inches apart, impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering a thin film coating of iron-silicon from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than about 0.05 micron aggregate thickness of laminated iron-silicon and about 0.4 micron for a single layer film upon said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, with an R.F. input power above the 8 watts/in 2 range and maintaining a temperature at the anode over 250° C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns, then stopping the deposition of said coating of iron-silicon upon said substrate by removing potential from said target and said substrate after said coating of iron-silicon has been deposited to a thickness of greater than 0.4 micron upon said substrate for a single film and greater than 0.05 micron thickness for a single layer of a laminated film coating of iron-silicon.
Claim 4
Dependent Claim
237 words
A process for manufacturing a substrate having deposited thereon an iron-silicon magnetic thin film coating comprising the steps of: placing a substrate upon the anode of an R.F. sputtering chamber, placing a target of iron-silicon containing 4% to 7% silicon upon the cathode of said sputtering chamber, spacing said cathode and said anode about 1/2 inch to 2 inches apart, impressing an R.F. potential greater than 1200 volts upon said cathode for sputtering a thin film coating of iron-silicon from said target of iron-silicon at a rate greater than 150A/min onto said substrate to a thickness greater than about 0.05 micron aggregate thickness of laminated iron-silicon and about 0.4 micron for a single layer film upon said substrate, while maintaining a bias between about minus 2.5 and minus 60 volts upon the anode and the substrate to be coated, with an R.F. input power above the 8 watts/in 2 range and maintaining a temperature at the anode over 250° C., in an evacuated atmosphere of argon as a sputtering gas at a pressure above 10 microns, then stopping the deposition of said coating of iron-silicon upon said substrate by removing potential from said target and said substrate after said coating of iron-silicon has been deposited to a thickness of greater than 0.4 micron upon said substrate for a single film and greater than 0.05 micron thickness for a single layer of a laminated film coating of iron-silicon.
Claim 5
Dependent Claim
73 words
A process in accordance with claim 2 including, depositing an electromagnetic transducing element upon said substrate coated with said coating of iron-silicon, and depositing an additional thin film coating of iron-silicon over said magnetic transducing element to a thickness of greater than 0.4 micron upon said element for a single film and greater than 0.05 micron thickness for a single layer or a laminated film coating of iron-silicon, employing the steps described above.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-19 | 1981-03-21 | 1981-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-19 | 1985-03-21 | 1985-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-19 | 1989-03-21 | 1989-09-20 | $7700.00 | Window Closed / Lapsed |