US4048557A
Expired / Lapsed
US
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Planar magnetoresistance thin film probe for magnetic field alignment
Assignee: Boeing North American Inc
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Filing: 1975-11-17
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Granted: 1977-09-13
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Expires: 1995-11-17
Abstract
Abstract A probe for measuring the magnetic field in the plane of a magnetic device such as a magnetic bubble domain memory or the like. The probe includes a ferromagnetic, thin film element or pattern. A constant current source is connected to the ferromagnetic thin film element so that any resistance variation in the element can be sensed by measuring the voltage drop thereacross. When a magnetic field is applied in the plane of the probe, the domains in the ferromagnetic thin film element align along the direction of the magnetic field causing a magnetoresistance effect which the probe senses as a voltage change across the ferromagnetic thin film pattern. The planar magnetoresistance probe can be used to measure the amount of in-plane, d.c. field component of a perpendicularly applied bias field due to bias field misalignment. Moreover, the probe can be integrated within a magnetic device such as a magnetic bubble memory device.
Inventors
- 👤 Thomas T. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:19
CPC Classifications
G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
284 words
In combination, a magnetic bubble domain structure including; a layer of material which is capable of forming and supporting magnetic bubble domains therein; a magnetizable device supported by said layer for selectively manipulating a magnetic bubble domain in said layer; and means for applying magnetic fields to said structure; said magnetic fields including, a bias magnetic field which is substantially orthogonal to said structure and is useful in forming magnetic bubble domains in said layer and which bias magnetic field may include an in-plane component which is in the plane of said device, and a propagating magnetic field which is substantially in the plane of said device and is useful in propagating magnetic bubble domains in said layer, the improvement comprising: means for detecting the in-plane component of said bias magnetic field including, a planar magnetoresistance effect probe for measuring the in-plane component of the bias magnetic field applied to said magnetic bubble domain structure, said probe formed on said layer and substantially coplanar with said device, said probe comprising at least one magnetic element, said magnetic element having dimensions such that the demagnetization field of said element is greater than the coercivity and anisotropy field thereof; means for supplying a constant current to said magnetic element; and means for producing an output voltage signal adapted for sensing and measuring the change in magnetoresistance in said magnetic element in response to a magnetic field which change in magnetoresistance is a function of the in-plane component of the bias magnetic field in the plane of said magnetic element and said magnetic bubble domain device such that any non-symmetry in the output signal is a measure of the in-plane bias component of the bias magnetic field.
Claim 2
Dependent Claim
284 words
In combination, a magnetic bubble domain structure including; a layer of material which is capable of forming and supporting magnetic bubble domains therein; a magnetizable device supported by said layer for selectively manipulating a magnetic bubble domain in said layer; and means for applying magnetic fields to said structure; said magnetic fields including, a bias magnetic field which is substantially orthogonal to said structure and is useful in forming magnetic bubble domains in said layer and which bias magnetic field may include an in-plane component which is in the plane of said device, and a propagating magnetic field which is substantially in the plane of said device and is useful in propagating magnetic bubble domains in said layer, the improvement comprising: means for detecting the in-plane component of said bias magnetic field including, a planar magnetoresistance effect probe for measuring the in-plane component of the bias magnetic field applied to said magnetic bubble domain structure, said probe formed on said layer and substantially coplanar with said device, said probe comprising at least one magnetic element, said magnetic element having dimensions such that the demagnetization field of said element is greater than the coercivity and anisotropy field thereof; means for supplying a constant current to said magnetic element; and means for producing an output voltage signal adapted for sensing and measuring the change in magnetoresistance in said magnetic element in response to a magnetic field which change in magnetoresistance is a function of the in-plane component of the bias magnetic field in the plane of said magnetic element and said magnetic bubble domain device such that any non-symmetry in the output signal is a measure of the in-plane bias component of the bias magnetic field.
Claim 3
Dependent Claim
23 words
A device as recited in claim 1 wherein said magnetic field applied in the plane of said ferromagnetic elements is an alternating field.
Claim 4
Dependent Claim
26 words
A device as recited in claim 1 wherein said magnetic field applied in the field of said thin film ferromagnetic elements is a constant magnetic field.
Claim 5
Dependent Claim
32 words
A device as recited in claim 1 wherein said probe consists of a plurality of elements each consisting of sets of at least two elements, said sets arranged perpendicular to each other.
Claim 6
Dependent Claim
21 words
A device as recited in claim 4 wherein said sets of elements are arranged in horizontal rows and in vertical columns.
Claim 7
Dependent Claim
47 words
A device as recited in claim 1 wherein said probe consists of elements in a single level thick film detector of a bubble circuit which elements are adapted to function as a magnetoresistance effect device that is sensitive to an in-plane magnetic field in two perpencidular directions.
Claim 8
Dependent Claim
29 words
A device as recited in claim 1 wherein the misalignment of the orthogonal bias magnetic field with respect to the device plane can be measured to within 0.1° accuracy.
Claim 9
Dependent Claim
25 words
A device as recited in claim 1 wherein said at least one ferromagnetic element is arranged in the guardrails of a magnetic bubble domain memory.
Claim 10
Dependent Claim
34 words
A device as recited in claim 1 wherein each of said elements of ferromagnetic material is fabricated of permalloy material and said patterns are formed from the class of chevron, circular and bar configurations.
Claim 11
Dependent Claim
28 words
The combination recited in claim 1 wherein each said magnetic element is fabricated of ferromagnetic material and are formed from the class of chevron, circular or bar configurations.
Claim 12
Independent Claim
131 words
A device for measuring the perpendicularity of a magnetic field which is applied to said device by measuring the component of the applied magnetic field in the plane of said device comprising: a plurality of patterns of magnetic material each of said patterns having dimensions that assure that the demagnetization field of said patterns is greater than the coercivity and anisotropy field thereof; said patterns connected in series to form sets of at least two patterns, said sets arranged in horizontal and vertical columns; and conductor means connected to said patterns to pass a current through said patterns and to provide an output signal representative of the change in the magnetoresistance effect in said patterns in response to said component of the applied magnetic field whereby said component can be measured.
Claim 13
Independent Claim
131 words
A device for measuring the perpendicularity of a magnetic field which is applied to said device by measuring the component of the applied magnetic field in the plane of said device comprising: a plurality of patterns of magnetic material each of said patterns having dimensions that assure that the demagnetization field of said patterns is greater than the coercivity and anisotropy field thereof; said patterns connected in series to form sets of at least two patterns, said sets arranged in horizontal and vertical columns; and conductor means connected to said patterns to pass a current through said patterns and to provide an output signal representative of the change in the magnetoresistance effect in said patterns in response to said component of the applied magnetic field whereby said component can be measured.
Claim 14
Independent Claim
94 words
A method for quantitatively measuring the magnetic field component in a device plane comprising the steps of: positioning a planar magnetoresistance thin film probe on the surface of said device plane; placing a calibrated coil around said probe; applying an a.c. signal and a d.c. signal to said coil; monitoring the output waveform from said probe in response to said a.c. signal and said d.c. signal; adjusting said d.c. signal to perfect a symmetrical waveform from the output wave of said probe; and recording the measurement of said d.c. current applied to said coil.
Claim 15
Independent Claim
94 words
A method for quantitatively measuring the magnetic field component in a device plane comprising the steps of: positioning a planar magnetoresistance thin film probe on the surface of said device plane; placing a calibrated coil around said probe; applying an a.c. signal and a d.c. signal to said coil; monitoring the output waveform from said probe in response to said a.c. signal and said d.c. signal; adjusting said d.c. signal to perfect a symmetrical waveform from the output wave of said probe; and recording the measurement of said d.c. current applied to said coil.
Claim 16
Dependent Claim
40 words
The method recited in claim 12 wherein said measurement of said magnetic field is ascertained by reading the d.c. component of said driving current, determining the calibration of said coil and converting the d.c. current value to said magnetic field.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-12 | 1981-03-14 | 1981-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-12 | 1985-03-14 | 1985-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-12 | 1989-03-14 | 1989-09-13 | $7700.00 | Window Closed / Lapsed |