US4046954A
Expired / Lapsed
US
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Monocrystalline silicates
Assignee: Boeing North American Inc
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Filing: 1975-04-09
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Granted: 1977-09-06
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Expires: 1995-04-09
Abstract
Abstract Single crystals consisting of various compositions from the quaternary silicate system Al 2 O 3 --CaO--MgO--SiO 2 are grown from the melt. The physical and chemical properties of the single crystal silicates, including akermanite (Ca 2 MgSi 2 O 7 ), cordierite (Mg 2 Al 4 Si 5 O 18 ), and mullite (Al 6 Si 2 O 13 ), make the silicates useful, for example, as substrates for epitaxial semiconductor films.
Inventors
- 👤 Michael F. Ehman
- 👤 Stanley B. Austerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:36
CPC Classifications
C; C30; C30B; C30B15/00; C30B29/00; C30B29/10; C30B29/34
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
28 words
A composite comprising a substrate formed of a monocrystalline silicate material selected from akermanite and mullite and a film of monocrystalline semiconductor material epitaxially disposed on said substrate.
Claim 2
Dependent Claim
28 words
A composite comprising a substrate formed of a monocrystalline silicate material selected from akermanite and mullite and a film of monocrystalline semiconductor material epitaxially disposed on said substrate.
Claim 3
Dependent Claim
11 words
The composite recited in claim 1 wherein said silicate is akermanite.
Claim 4
Dependent Claim
15 words
The composite recited in claim 2 wherein said film of monocrystalline semiconductor material is silicon.
Claim 5
Dependent Claim
11 words
The composite recited in claim 1 wherein said silicate is mullite.
Claim 6
Dependent Claim
15 words
The composite recited in claim 4 wherein said film of monocrystalline semiconductor material is silicon.
Claim 7
Dependent Claim
50 words
The composite recited in claim 5 wherein said film of monocrystalline silicon is disposed on a surface of the mullite having a {001} crystallographic orientation; and said monocrystalline silicon has a {111} crystallographic plane parallel to the {001}001} crystallographic plane of the substrate surface on which said silicon is disposed.
References Cited (Backward Citations)
US3564358A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |