US4046607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: NEC Corp
•
Filing: 1976-06-09
•
Granted: 1977-09-06
•
Expires: 1996-06-09
Abstract
Abstract A silicon layer is deposited over the insulating layer covering the surface of the semiconductor substrate and apertured to define a contact window through which the silicon layer is connected with a one-conductivity-type region formed in the semiconductor substrate. An impurity of the one conductivity type is introduced into the one-conductivity-type region through the contact window from the silicon layer. This impurity may be supplied from the surface of the silicon layer or may be preliminarily doped in the silicon layer. A conductive layer is deposited over the silicon layer and is formed to a predetermined pattern. Thereafter, the silicon layer is formed to the same pattern.
Inventors
- 👤 Yasukazu Inoue
- 👤 Shoji Fujimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
111 words
A method of manufacturing a semi-conductor device comprising the steps of: forming a semiconductor region of one conductivity type in a semiconductor substrate; forming a contact window in an insulating film covering the surface of said semiconductor substrate to expose at least a portion of the surface of said semiconductor region; depositing a layer of silicon over the insulating layer; introducing an impurity of said one conductivity type into said semiconductor region through said contact window; depositing a conductive layer over the silicon layer; defining a pattern in said conductive layer; and thereafter removing a portion of said silicon layer that is not covered by the conductive layer of said pattern.
Claim 2
Independent Claim
111 words
A method of manufacturing a semi-conductor device comprising the steps of: forming a semiconductor region of one conductivity type in a semiconductor substrate; forming a contact window in an insulating film covering the surface of said semiconductor substrate to expose at least a portion of the surface of said semiconductor region; depositing a layer of silicon over the insulating layer; introducing an impurity of said one conductivity type into said semiconductor region through said contact window; depositing a conductive layer over the silicon layer; defining a pattern in said conductive layer; and thereafter removing a portion of said silicon layer that is not covered by the conductive layer of said pattern.
Claim 3
Dependent Claim
18 words
The method of claim 1, in which said semiconductor substrate is silicon, and said conductive layer is aluminum.
Claim 4
Dependent Claim
25 words
The method of claim 1, in which said step of introducing an inpurity includes diffusing said impurity from said silicon layer into said semiconductor region.
Claim 5
Dependent Claim
29 words
The method of claim 3, in which said step of introducing an impurity further includes diffusing said impurity into said silicon layer from the surface of said silicon layer.
Claim 6
Dependent Claim
37 words
The method of claim 1, in which the deposited silicon layer is doped with the impurity of said one conductivity type, and said introducing step includes diffusing doped impurity from said silicon layer into said semiconductor region.
Claim 7
Dependent Claim
25 words
The method of claim 1, in which said step of defining a pattern in said conductive layer includes removing undesired portion of said conductive layer.
Claim 8
Dependent Claim
48 words
The method of claim 1, in which said step of defining a pattern in said conductive layer includes converting undesired portion of said conductive layer into insulator, and said step of defining a pattern in said silicon layer includes converting undesired portion of said silicon layer into insulator.
Claim 9
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising the steps of forming a region of one conductivity type in a semiconductor substrate, covering the surface of said semiconductor substrate with an insulating layer, forming a contact window for said region in said insulating layer, depositing a polycrystalline silicon layer over said insulating layer, diffusing an impurity of said one conductivity type into said polycrystalline silicon layer, depositing an aluminum layer over said polycrystalline silicon layer, defining a pattern in said aluminum layer, and defining the same pattern in said polycrystalline silicon layer.
Claim 10
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising the steps of forming a region of one conductivity type in a semiconductor substrate, covering the surface of said semiconductor substrate with an insulating layer, forming a contact window for said region in said insulating layer, depositing a polycrystalline silicon layer over said insulating layer, diffusing an impurity of said one conductivity type into said polycrystalline silicon layer, depositing an aluminum layer over said polycrystalline silicon layer, defining a pattern in said aluminum layer, and defining the same pattern in said polycrystalline silicon layer.
Claim 11
Independent Claim
99 words
A method of manufacturing a semiconductor device comprising the steps of forming a region of one conductivity type in a semiconductor substrate, covering the surface of said semiconductor substrate with an insulating layer, forming a contact window for said region in said insulating layer, depositing a silicon layer doped with an impurity of said one conductivity type over said insulating layer, diffusing said impurity from said silicon layer into said region through said contact window, depositing an aluminum layer over said silicon layer, defining a pattern in said aluminum layer, and defining the same pattern in said silicon layer.
Claim 12
Independent Claim
99 words
A method of manufacturing a semiconductor device comprising the steps of forming a region of one conductivity type in a semiconductor substrate, covering the surface of said semiconductor substrate with an insulating layer, forming a contact window for said region in said insulating layer, depositing a silicon layer doped with an impurity of said one conductivity type over said insulating layer, diffusing said impurity from said silicon layer into said region through said contact window, depositing an aluminum layer over said silicon layer, defining a pattern in said aluminum layer, and defining the same pattern in said silicon layer.
Claim 13
Independent Claim
117 words
A method of manufacturing an insulated-gate field-effect semiconductor device comprising the steps of forming a source region and a drain region of one conductivity type in a semiconductor substrate of the opposite conductivity type, covering the surface of said semiconductor substrate with an insulating layer, forming contact windows for said source and drain regions in said insulating layer, depositing a polycrystalline silicon layer over said insulating layer. introducing an impurity of said one conductivity type from said polycrystalline silicon layer through said contact windows into said source and drain regions, respectively, depositing a conductive layer over said polycrystalline silicon layer, defining a pattern in said conductive layer, and defining the same pattern in said polycrystalline silicon layer.
Claim 14
Independent Claim
117 words
A method of manufacturing an insulated-gate field-effect semiconductor device comprising the steps of forming a source region and a drain region of one conductivity type in a semiconductor substrate of the opposite conductivity type, covering the surface of said semiconductor substrate with an insulating layer, forming contact windows for said source and drain regions in said insulating layer, depositing a polycrystalline silicon layer over said insulating layer. introducing an impurity of said one conductivity type from said polycrystalline silicon layer through said contact windows into said source and drain regions, respectively, depositing a conductive layer over said polycrystalline silicon layer, defining a pattern in said conductive layer, and defining the same pattern in said polycrystalline silicon layer.
Claim 15
Dependent Claim
22 words
The method of claim 10, further comprising the step of diffusing said impurity into said polycrystalline silicon layer before said introducing step.
Claim 16
Dependent Claim
12 words
The method of claim 10, in which said conductive layer is aluminum.
Claim 17
Dependent Claim
16 words
The method of claim 12, in which said pattern includes pattern of source and drain electrodes.
References Cited (Backward Citations)
US3806361A
Cited
US3847687A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |