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US4045252A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing a semiconductor structure for microwave operation, including a very thin insulating or weakly doped layer

Assignee: Thales SA
•
Filing: 1975-10-15
•
Granted: 1977-08-30
•
Expires: 1995-10-15
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Abstract

Abstract The method relates to the production of a very thin insulating or weakly-doped layer in the immediate neighborhood of a highly-doped layer within the body of a semiconductor structure designed to operate in the microwave range. For instance a P + I N + structure is obtained in an N + -doped gallium arsenide substrate, by implanting a P + - layer using beryllium ions. An insulating layer is spontaneously formed between the highly-doped layers. Using beryllium, the thickness is effectively of the order of one-tenth of a micron. In another example, an avalanche diode of high efficiency, made of gallium arsenide for microwave operation, having a P + N - N + N N + structure is obtained wherein the layer N - is the thin weakly-doped layer in the immediate neighborhood of a highly-doped layer (N + ), which is substantially as thin as the N - layer in this particular case.

Inventors

  • 👤 Paul Cyril Moutou

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 13:59
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10D; H10D8/00; H10D8/50; H10P30/208; H10P30/21; H10P30/218

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 105 words
A method of manufacturing a semiconductor structure designed for microwave operation, comprising at least two following steps: a. excessively doping by N type impurities to a concentration in excess of 10 16 atom/cm 3 at least a layer of a gallium arsenide substrate having two parallel large faces; b. bombarding said substrate with beryllium ions so as to implant an excessively P-doped layer to a concentration in excess of 10 16 atom/cm 3 parallel to said large faces, thus promoting at the border separating the N and P layers the spontaneous formation of a thin layer much less doped than said N and P layers.
Claim 2
Independent Claim 105 words
A method of manufacturing a semiconductor structure designed for microwave operation, comprising at least two following steps: a. excessively doping by N type impurities to a concentration in excess of 10 16 atom/cm 3 at least a layer of a gallium arsenide substrate having two parallel large faces; b. bombarding said substrate with beryllium ions so as to implant an excessively P-doped layer to a concentration in excess of 10 16 atom/cm 3 parallel to said large faces, thus promoting at the border separating the N and P layers the spontaneous formation of a thin layer much less doped than said N and P layers.
Claim 3
Dependent Claim 42 words
A method as claimed in claim 1, wherein, at step (a), said N-doped layer is spread in the whole substrate and at step (b) said P-doped layer is implanted starting from one large face of said substrate, thus creating a PIN structure.
Claim 4
Dependent Claim 15 words
A method as claimed in claim 1, wherein at step (a) the starting structure comprises:
Claim 5
Dependent Claim 12 words
an N ++ -doped layer (more than 10 18 at/cm 3 );
Claim 6
Dependent Claim 12 words
an N ++ -doped layer (more than 10 18 at/cm 3 );
Claim 7
Dependent Claim 15 words
an N + -doped layer (density of the order of 10 17 at/cm 3 )
Claim 8
Dependent Claim 15 words
an N + -doped layer (density of the order of 10 17 at/cm 3 )
Claim 9
Dependent Claim 45 words
an N layer (density of the order of 10 15 at/cm 3 ) in which has been implanted by ion bombardment an N + -doped layer (density between 10 16 and 10 18 at/cm 3 ) the thickness of which is lower than 1/10 microns.
Claim 10
Dependent Claim 45 words
an N layer (density of the order of 10 15 at/cm 3 ) in which has been implanted by ion bombardment an N + -doped layer (density between 10 16 and 10 18 at/cm 3 ) the thickness of which is lower than 1/10 microns.

References Cited (Backward Citations)

US3352725A Cited
US3747203A Cited
US3649369A Cited
US3856578A Cited
US3904449A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-08-29 1981-02-28 1981-08-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-08-29 1985-02-28 1985-08-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-08-29 1989-02-28 1989-08-30 $7700.00 Window Closed / Lapsed

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