Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
239 words
In a thermoelectric generator unit for converting heat directly from a single heat source into electrical energy, at least one active cell spaced from the heat source and comprising two identical metallic terminal supports having sandwiched therebetween, in intimate contact over their entire surface with each other and with the supports, first, second and third successive thin films, each of the films having a thickness of a few microns, the first and third ones of the films being metals that respectively have different work functions θ 1 and θ 3 , the second film being of semiconductor material having a concentration of holes of the order of 10 18 n/cm 3 and of electrons of the order of 10 8 n/cm 3 at 20° C., and means including a single heat source completely surrounding the cell for uniformly heating the cell to a temperature T ≦ T c , where ##EQU5## k is Boltsman's constant, (P 2 ') T = T c is the concentration of holes in the second film adjacent its junction with the first film, (P 2 ") T = T c is the concentration of holes in the second film adjacent its junction with the third film, ##EQU6## P m and n m are respectively the concentrations of holes and electrons in the metals, and P 2 and n 2 are respectively the concentrations of holes and electrons in the bulk of the semiconductor material.
Claim 2
Dependent Claim
239 words
In a thermoelectric generator unit for converting heat directly from a single heat source into electrical energy, at least one active cell spaced from the heat source and comprising two identical metallic terminal supports having sandwiched therebetween, in intimate contact over their entire surface with each other and with the supports, first, second and third successive thin films, each of the films having a thickness of a few microns, the first and third ones of the films being metals that respectively have different work functions θ 1 and θ 3 , the second film being of semiconductor material having a concentration of holes of the order of 10 18 n/cm 3 and of electrons of the order of 10 8 n/cm 3 at 20° C., and means including a single heat source completely surrounding the cell for uniformly heating the cell to a temperature T ≦ T c , where ##EQU5## k is Boltsman's constant, (P 2 ') T = T c is the concentration of holes in the second film adjacent its junction with the first film, (P 2 ") T = T c is the concentration of holes in the second film adjacent its junction with the third film, ##EQU6## P m and n m are respectively the concentrations of holes and electrons in the metals, and P 2 and n 2 are respectively the concentrations of holes and electrons in the bulk of the semiconductor material.
Claim 3
Dependent Claim
17 words
A thermoelectric generator unit according to claim 1, comprising a plurality of said cells connected in series.
Claim 4
Dependent Claim
17 words
A thermoelectric generator unit according to claim 1, comprising a plurality of said cells connected in parallel.
Claim 5
Dependent Claim
33 words
A thermoelectric generator unit according to claim 1, wherein the three thin films of each cell are successively deposited by evaporation in a vacuum on a surface of one of the terminal supports.
Claim 6
Dependent Claim
32 words
A thermoelectric generator unit as claimed in claim 1, in which the first and third films are deposited by evaporation in a vacuum on opposed planes or faces of the second film.
Claim 7
Dependent Claim
75 words
A thermoelectric generator unit according to claim 2, in which the cells are sequentially arranged with first and second ones of the metallic supports disposed at opposite ends thereof, in which the heating means completely surrounding the cell comprises an oven of ceramic material for providing thermal insulation of the cells, and in which the single heat source extends through opposed walls of the oven to terminate adjacent the respective first and second metallic supports.