Integrated circuit having guard ring Schottky barrier diode and method

Claim 1

In a method for forming an integrated circuit having a Schottky barrier diode construction therein, providing a semiconductor body of one conductivity type and having a planar surface, forming a region of opposite conductivity type in said body extending to said surface and being substantially continuous to surround a region of said body of one conductivity type at said surface, providing a layer of insulating material on said surface, forming an opening in said layer of insulating material which has an edge which overlies said region of opposite conductivity type, forming a layer of metallization on said layer of insulating material and extending into said opening and making contact to said surface of said body, forming an additional layer of insulating material over said first layer of insulating material and over said first layer of metallization, forming a via of predetermined size in said second layer of insulating material and having an edge which overlies said region of one conductivity type circumscribed by said region of opposite conductivity type, sintering the semiconductor body and first metalization structure, forming a second layer of metallization on said additional layer of insulating material and extending there through and making contact with said first layer of metallization and again sintering said body to cause a predetermined additional bulk of metallization to be brought through said via of predetermined size and to extend between said body into contact with the first layer of metallization and further in contact with the one conductivity body portion positioned within the confines of the continuous region of opposite conductivity to form a Schottky barrier contact between said region of opposite conductivity and the body portion of one conductivity.