US4035825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thyristor with branched base
Assignee: Siemens AG
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Filing: 1975-11-28
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Granted: 1977-07-12
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Expires: 1995-11-28
Abstract
Abstract The present invention pertains to a thyristor device comprising a semiconductor body having at least one emitter zone positioned at a major surface of the body. A base zone shares a portion of the major surface with the emitter zone and extends under the entirety of the emitter zone. The base zone and emitter zone form a PN junction at their interface. The portion of the base zone under the emitter zone has a plurality of low resistivity branches which have their common origin in the portion of the base zone located directly under the major surface.
Inventors
- 👤 Fritz Kirschner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:34
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/125; H10D62/13; H10D62/141; H10D62/148; H10D62/17; H10D62/192; H10D62/206
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
181 words
A thyristor device comprising a body of semiconductor material and electrical conductor means; said body of semiconductor material comprising at least one emitter zone disposed along a major surface of said body, a base zone disposed in said body adjacent to and in PN junction forming relationship with said emitter zone, said base zone having a first portion under said emitter zone and a second portion emerging at said major surface; said electrical conductor means comprising an emitter electrode affixed to said emitter zone at said major surface, a base electrode affixed to said second portion of said base zone at said major surface; a plurality of branches in said first portion of said base zone, said branches having a common origin in said second portion of said base zone under said base electrode, said emitter zone having portions of a first thickness above said branches, said emitter zone having portions of a second thickness separating said branches, said second thickness exceeding said first thickness, said base zone having a doping concentration increasing uniformly in a direction toward said major surface.
Claim 2
Dependent Claim
181 words
A thyristor device comprising a body of semiconductor material and electrical conductor means; said body of semiconductor material comprising at least one emitter zone disposed along a major surface of said body, a base zone disposed in said body adjacent to and in PN junction forming relationship with said emitter zone, said base zone having a first portion under said emitter zone and a second portion emerging at said major surface; said electrical conductor means comprising an emitter electrode affixed to said emitter zone at said major surface, a base electrode affixed to said second portion of said base zone at said major surface; a plurality of branches in said first portion of said base zone, said branches having a common origin in said second portion of said base zone under said base electrode, said emitter zone having portions of a first thickness above said branches, said emitter zone having portions of a second thickness separating said branches, said second thickness exceeding said first thickness, said base zone having a doping concentration increasing uniformly in a direction toward said major surface.
Claim 3
Dependent Claim
37 words
A thyristor device in accordance with claim 1 wherein a number of said branches of said base zone are regularly spaced in parallel and are interconnected by at least one branch perpendicularly disposed to said parallel branches.
Claim 4
Dependent Claim
23 words
A thyristor device in accordance with claim 1 wherein said first thickness of said emitter zone above said branches is about 1 micron.
Claim 5
Dependent Claim
23 words
A thyristor device in accordance with claim 1 wherein said first thickness of said emitter zone above said branches is about 8 microns.
Claim 6
Dependent Claim
192 words
A thyristor device comprising a body of semiconductor material and electrical conductor means; said body of semiconductor material comprising at least one emitter zone disposed along a major surface of said body, a base zone disposed in said body adjacent to and in PN junction forming relationship with said emitter zone, said base zone having a first portion under said emitter zone and a second centrally located portion emerging at said major surface; said electrical conductor means comprising an emitter electrode affixed to said emitter zone at said major surface, a base electrode affixed to said second centrally located portion of said base zone at said major surface; a plurality of branches in said first portion of said base zone, said branches having a common origin in said second centrally located portion of said base zone, said branches extending radially outwards under said emitter zone, said emitter zone having portions of a first thickness above said branches, said emitter zone having portions of a second thickness separating said branches, said second thickness exceeding said first thickness, said base zone having a doping concentration increasing uniformly in a direction toward said major surface.
Claim 7
Dependent Claim
192 words
A thyristor device comprising a body of semiconductor material and electrical conductor means; said body of semiconductor material comprising at least one emitter zone disposed along a major surface of said body, a base zone disposed in said body adjacent to and in PN junction forming relationship with said emitter zone, said base zone having a first portion under said emitter zone and a second centrally located portion emerging at said major surface; said electrical conductor means comprising an emitter electrode affixed to said emitter zone at said major surface, a base electrode affixed to said second centrally located portion of said base zone at said major surface; a plurality of branches in said first portion of said base zone, said branches having a common origin in said second centrally located portion of said base zone, said branches extending radially outwards under said emitter zone, said emitter zone having portions of a first thickness above said branches, said emitter zone having portions of a second thickness separating said branches, said second thickness exceeding said first thickness, said base zone having a doping concentration increasing uniformly in a direction toward said major surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-11 | 1981-01-10 | 1981-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-11 | 1985-01-10 | 1985-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-11 | 1989-01-10 | 1989-07-12 | $7700.00 | Window Closed / Lapsed |