US4035822A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pressure sensitive field effect device
Assignee: RCA Corp
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Filing: 1975-03-14
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Granted: 1977-07-12
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Expires: 1995-03-14
Abstract
Abstract A pressure sensitive field effect semiconductor device which is one element of an integrated array is disclosed. The device employs a layer of elastomer material located substantially between the gate and the current carrying channel, to effectuate the conversion of a longitudinal pressure variation to an electrical variation. The device may inherently include amplification of the electrical variation. One use for the device is in an acoustic wave detector array.
Inventors
- 👤 David Herman Raphael Vilkomerson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:28
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D48/00; H10D48/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
94 words
A pressure sensitive field effect device which is a part of a semiconductor integrated circuit which comprises: a first region and a second region in a body of semiconductor material, adjacent to a surface of said body and separated therein by a channel region, said channel region having an insulating layer disposed thereover; nonconductive, resilient, compressible means disposed on said insulating layer in continuous contact therewith over at least said channel region, said means being a layer of an elastomer; and a gate electrode on said nonconductive, resilient, compressible means over said channel region.
Claim 2
Dependent Claim
94 words
A pressure sensitive field effect device which is a part of a semiconductor integrated circuit which comprises: a first region and a second region in a body of semiconductor material, adjacent to a surface of said body and separated therein by a channel region, said channel region having an insulating layer disposed thereover; nonconductive, resilient, compressible means disposed on said insulating layer in continuous contact therewith over at least said channel region, said means being a layer of an elastomer; and a gate electrode on said nonconductive, resilient, compressible means over said channel region.
Claim 3
Dependent Claim
18 words
A pressure sensitive field effect device as claimed in claim 1 wherein: said elastomer is a silicone rubber.
Claim 4
Dependent Claim
21 words
A pressure sensitive field effect device as claimed in claim 1 wherein: said resilient, compressible means is about one μm thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-07-11 | 1981-01-10 | 1981-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-07-11 | 1985-01-10 | 1985-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-07-11 | 1989-01-10 | 1989-07-12 | $7700.00 | Window Closed / Lapsed |