US4032418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of introducing impurities into a semiconductor
Assignee: Individual
•
Filing: 1975-07-07
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Granted: 1977-06-28
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Expires: 1995-07-07
Abstract
Abstract A method of manufacturing a p-n, n +-n or p +-p junction in a semiconducting material, introducing into said material ions of an impurity material by exposing a surface of said semiconductor to a liquid containing ions of said impurity material, applying a voltage across said semiconductor-liquid interface, said voltage having a polarity and magnitude such that said ions are accelerated and drawn into said semiconducting material without the formation of a deposit of said impurity material on said exposed surface being necessary.
Inventors
- 👤 Jovan Antula
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:51
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/04; H; H10; H10P; H10P32/00; H10P32/10; H10P32/16; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6324
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
192 words
A method for doping a surface zone of a doped semiconducting material with an impurity material to provide a junction (p-n or p-p +or p-n + ) within the doped semiconductor material comprising the steps of contacting a surface portion of said doped semiconducting material with a liquid containing ions of said impurity material, at the temperature of below 60° C. to form a doped semiconductor-material - ion containing liquid interface; placing an electrode connected to one terminal of a d-c source within said liquid and connecting the opposite polarity terminal of the d-c source to another surface portion of said doped semiconducting material; and forming a depletion layer to permit migration of ions thereinto from said ion containing liquid through said interface and thus form said junction by applying a d-c voltage from said source to said terminal and hence across said doped semiconducting material - ion-containing liquid interface, said voltage having a polarity and magnitude to form the zone of depleted charge carriers in the semi-conductor material adjacent the surface in contact with the electrolyte and to accelerate said ions from said ion containing liquid into said doped semi-conducting material.
Claim 2
Independent Claim
192 words
A method for doping a surface zone of a doped semiconducting material with an impurity material to provide a junction (p-n or p-p +or p-n + ) within the doped semiconductor material comprising the steps of contacting a surface portion of said doped semiconducting material with a liquid containing ions of said impurity material, at the temperature of below 60° C. to form a doped semiconductor-material - ion containing liquid interface; placing an electrode connected to one terminal of a d-c source within said liquid and connecting the opposite polarity terminal of the d-c source to another surface portion of said doped semiconducting material; and forming a depletion layer to permit migration of ions thereinto from said ion containing liquid through said interface and thus form said junction by applying a d-c voltage from said source to said terminal and hence across said doped semiconducting material - ion-containing liquid interface, said voltage having a polarity and magnitude to form the zone of depleted charge carriers in the semi-conductor material adjacent the surface in contact with the electrolyte and to accelerate said ions from said ion containing liquid into said doped semi-conducting material.
Claim 3
Dependent Claim
16 words
The method according to claim 1 wherein the temperature of said liquid is below 30° C.
Claim 4
Dependent Claim
12 words
The method according to claim 1 wherein said semiconducting material is silicon.
Claim 5
Dependent Claim
22 words
The method according to claim 1 wherein said liquid contains positive arsenic ions obtained by dissolving As 2 O 3 in HCl.
Claim 6
Dependent Claim
21 words
The method according to claim 1 wherein said liquid contains positive lithium ions obtained by dissolving lithium perchlorate in propylene carbonate.
Claim 7
Dependent Claim
15 words
The method according to claim 1 wherein said surface of said semiconducting material is polished.
Claim 8
Dependent Claim
210 words
Method for doping a surface zone of a doped semiconducting material with an impurity to provide a junction (p-n; p-p +; n-n + ) within the semiconducting material comprising the steps of contacting the surface of said semiconducting material with a liquid containing ions of said impurity material at a temperature of below 60° C.; and forming a depletion layer to permit migration of ions thereinto from said ion containing liquid through said interface and thus form said junction by applying a direct electrical potential between the semiconducting material and the liquid to establish a voltage across the semiconductor-liquid interface, said electrical potential having the characteristics of (a) a polarity and magnitude to accelerate the ions of said impurity material to migrate into the charge carrier depleted surface zone of said doped semiconducting material, and (b) the polarity of the terminal of said potential applied to said doped semiconducting material being opposite to the conductivity type of the doped semiconducting material so that the surface area in contact with the electrolyte will define within the doped semiconducting material a zone which is depleted of charge carriers, the ions of the impurity material in the liquid having a charge polarity which corresponds to the conductivity type of the doped semiconducting material.
Claim 9
Dependent Claim
210 words
Method for doping a surface zone of a doped semiconducting material with an impurity to provide a junction (p-n; p-p +; n-n + ) within the semiconducting material comprising the steps of contacting the surface of said semiconducting material with a liquid containing ions of said impurity material at a temperature of below 60° C.; and forming a depletion layer to permit migration of ions thereinto from said ion containing liquid through said interface and thus form said junction by applying a direct electrical potential between the semiconducting material and the liquid to establish a voltage across the semiconductor-liquid interface, said electrical potential having the characteristics of (a) a polarity and magnitude to accelerate the ions of said impurity material to migrate into the charge carrier depleted surface zone of said doped semiconducting material, and (b) the polarity of the terminal of said potential applied to said doped semiconducting material being opposite to the conductivity type of the doped semiconducting material so that the surface area in contact with the electrolyte will define within the doped semiconducting material a zone which is depleted of charge carriers, the ions of the impurity material in the liquid having a charge polarity which corresponds to the conductivity type of the doped semiconducting material.
Claim 10
Dependent Claim
15 words
Method according to claim 7, wherein the temperature of said liquid is below 30° C.
Claim 11
Dependent Claim
21 words
Method according to claim 7, wherein said liquid contains positive arsenic ions obtained by dissolving As 2 O 3 in HCl.
Claim 12
Dependent Claim
20 words
Method according to claim 7, wherein said liquid contains positive lithium ions obtained by dissolving lithium perchlorate in propylene carbonate.
Claim 13
Dependent Claim
59 words
Method according to claim 7 wherein the semiconductor material is p-silicon, the impurity material comprises a material selected from the group of arsenic and lithium to provide positive ions, the p-type silicon being connected to the negative terminal of the direct electrical potential, the positive terminal of the direct electrical potential being connected to the liquid containing said impurities.
References Cited (Backward Citations)
US2560792A
Cited
US3261773A
Cited
US3380902A
Cited
US3385776A
Cited
DE1939267A1
Cited
US3755092A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-27 | 1980-12-27 | 1981-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-27 | 1984-12-27 | 1985-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-27 | 1988-12-27 | 1989-06-28 | $7700.00 | Window Closed / Lapsed |