Patent US2467935A successfully refreshed from Google Patents.
US4025873A
Expired / Lapsed
US
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Broadband, microwave, two-stage, stagger-tuned, field effect transistor amplifier
Assignee: United States Department of the Navy
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Filing: 1976-08-17
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Granted: 1977-05-24
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Expires: 1996-08-17
Abstract
Abstract A microwave-integrated-circuit amplifier provides a broadband response in e region of 1-10 GHz. The amplifier includes: a microstrip which provides distributed circuit values for tuning; first and second microwave FETs included in the microstrip and tuned to the upper and lower cutoffs of the bandwidth, respectively; and a non-reciprocal microwave isolator which passes a signal in only one direction and is connected between the first and second microwave FETs.
Inventors
- 👤 Ronald L. Chilluffo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:25
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/189; H03F3/19; H03F3/195; H03F3/60; H03F3/601
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
138 words
A microwave integrated circuit amplifier for amplifying a wide bandwidth in the microwave region comprising: microstrip means for providing distributed circuits for tuning; first microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the upper cutoff of said bandwidth for providing a high-gain frequency response at the upper cutoff region of said bandwidth; second microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the lower cutoff of said bandwidth for providing a high-gain frequency response at the lower cutoff region of said bandwidth; and microstrip isolator means connected to said microstrip and further connected between said first and second microwave FET means for passing a signal in only one direction between said first and second microwave FET means.
Claim 2
Dependent Claim
138 words
A microwave integrated circuit amplifier for amplifying a wide bandwidth in the microwave region comprising: microstrip means for providing distributed circuits for tuning; first microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the upper cutoff of said bandwidth for providing a high-gain frequency response at the upper cutoff region of said bandwidth; second microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the lower cutoff of said bandwidth for providing a high-gain frequency response at the lower cutoff region of said bandwidth; and microstrip isolator means connected to said microstrip and further connected between said first and second microwave FET means for passing a signal in only one direction between said first and second microwave FET means.
Claim 3
Dependent Claim
17 words
The apparatus of claim 1 in which said first microwave FET means includes a single microwave FET.
Claim 4
Dependent Claim
17 words
The apparatus of claim 1 in which said second microwave FET means includes a single microwave FET.
Claim 5
Independent Claim
101 words
A method for obtaining wide bandwidth amplification of a microwave signal with a microwave-integrated-amplifier comprising the steps of: amplifying said microwave signal with a first microwave FET tuned, by means of distributed circuits of a microstrip, to the upper cutoff region of said bandwidth; amplifying said first amplified microwave signal with a second microwave FET tuned, by means of distributed circuits of a microstrip, to the lower cutoff region of said bandwidth; and providing isolation between said first and second microwave FET by a microwave isolator which passes signals in only one direction from the first to the second microwave FET.
Claim 6
Independent Claim
101 words
A method for obtaining wide bandwidth amplification of a microwave signal with a microwave-integrated-amplifier comprising the steps of: amplifying said microwave signal with a first microwave FET tuned, by means of distributed circuits of a microstrip, to the upper cutoff region of said bandwidth; amplifying said first amplified microwave signal with a second microwave FET tuned, by means of distributed circuits of a microstrip, to the lower cutoff region of said bandwidth; and providing isolation between said first and second microwave FET by a microwave isolator which passes signals in only one direction from the first to the second microwave FET.
Claim 7
Independent Claim
86 words
A method for obtaining a wideband microwave response from a microwave-integrated-amplifier comprising the steps of: tuning a first microwave FET, by means of distributed circuit elements of a microstrip, to the lower-cutoff region of said bandwidth; tuning a second microwave FET, by means of distributed circuit elements of a microstrip, to the upper-cutoff region of said bandwidth; and providing isolation between said first and second microwave FETs by a microwave isolator which passes signal in only one direction from the first to the second microwave FETs.
Claim 8
Independent Claim
86 words
A method for obtaining a wideband microwave response from a microwave-integrated-amplifier comprising the steps of: tuning a first microwave FET, by means of distributed circuit elements of a microstrip, to the lower-cutoff region of said bandwidth; tuning a second microwave FET, by means of distributed circuit elements of a microstrip, to the upper-cutoff region of said bandwidth; and providing isolation between said first and second microwave FETs by a microwave isolator which passes signal in only one direction from the first to the second microwave FETs.
Claim 9
Dependent Claim
121 words
The apparatus of claim 1 in which said microstrip includes: a first pair of serial transmission line means connected to the input of said first microwave FET means, for providing the necessary input impedance for tuning said first microwave FET means to the upper-cutoff of said bandwidth; a second pair of serial transmission line means connected to the input of said second microwave FET means for providing the necessary input impedance for tuning said second microwave FET means to the lower-cutoff of said bandwidth; a third pair of serial transmission line means connected to the output of said second microwave FET means for providing the necessary output impedance for tuning said second microwave FET means to the lower-cutoff of said bandwidth.
References Cited (Backward Citations)
US3296545A
Cited
US3569850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-23 | 1980-11-22 | 1981-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-23 | 1984-11-22 | 1985-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-23 | 1988-11-22 | 1989-05-24 | $7700.00 | Window Closed / Lapsed |