US4025691A
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Organic semiconductor element
Assignee: Eastman Kodak Co
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Filing: 1976-02-02
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Granted: 1977-05-24
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Expires: 1996-02-02
Abstract
Abstract The amine salts of linear polyaniline compounds, including substituted polyaniline compounds, are useful, semiconductors. These materials are generally soluble in popular organic solvents and have resistivities between 10.sup. -3 and 10 9 ohm-cm. These compounds are useful in the formation of semiconductor compositions, including self-supporting films, and various semiconductor elements such as antistatic films and fibers.
Inventors
- 👤 Donald J. Trevoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:12
CPC Classifications
G; G03; G03C; G03C1/00; G03C1/76; G03C1/85; G03G; G03G5/00; G03G5/10; G03G5/101; H; H10; H10K; H10K10/00; H10K10/20; H10K10/29; H10K85/00; H10K85/10; H10K85/111
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
323 words
A semiconductor element comprising a support having thereon a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##STR16## in which J represents either R 1 or a group having the formula ##STR17## K represents either R 3 or a group having the formula ##STR18## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals, and n and p are each integers having the following combinations of values: ______________________________________
##STR19##
and K represents R.sub.3,
p= 0 n= 0, 1, 2, 3, 4, 5
p= 1 n= 0, 1, 2, 3
p= 2 n= 0, 1
when J represents R.sub.1 and
K represents R.sub.3,
p= 0 n= 0, 1, 2, 3, 4, 5, 6
p= 1 n= 0, 1, 2, 3, 4
p= 2 n= 0, 1, 2
p= 3 n= 0
when J represents R.sub.1 and
##STR20## p= 0 n= 0, 1, 2, 3, 4, 5
p= 1 n= 0, 1, 2, 3
p= 2 n= 0, 1;
______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 2
Dependent Claim
323 words
A semiconductor element comprising a support having thereon a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##STR16## in which J represents either R 1 or a group having the formula ##STR17## K represents either R 3 or a group having the formula ##STR18## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals, and n and p are each integers having the following combinations of values: ______________________________________
##STR19##
and K represents R.sub.3,
p= 0 n= 0, 1, 2, 3, 4, 5
p= 1 n= 0, 1, 2, 3
p= 2 n= 0, 1
when J represents R.sub.1 and
K represents R.sub.3,
p= 0 n= 0, 1, 2, 3, 4, 5, 6
p= 1 n= 0, 1, 2, 3, 4
p= 2 n= 0, 1, 2
p= 3 n= 0
when J represents R.sub.1 and
##STR20## p= 0 n= 0, 1, 2, 3, 4, 5
p= 1 n= 0, 1, 2, 3
p= 2 n= 0, 1;
______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 3
Dependent Claim
29 words
A semiconductor element as described in claim 1, wherein the moiety A is selected from the group consisting of an inorganic acid, an organic acid and an acidic polymer.
Claim 4
Dependent Claim
18 words
A semiconductor element as described in claim 2 wherein said semiconductor is in the presence of a binder.
Claim 5
Dependent Claim
18 words
A semiconductor element as described in claim 1 wherein said semiconductor is in the presence of a binder.
Claim 6
Dependent Claim
291 words
A semiconductor element comprising a support having thereon a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##STR21## in which: J represents either R 1 or a group having the formula ##STR22## K represents either R 3 or a group having the formula ##STR23## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and n and p are each integers having the following combinations of values: ______________________________________
##STR24##
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3
when J represents R.sub.1 and
K represents R.sub.3
p = 0 n = 0, 1, 2
p = 1 n = 0, 1
when J represents R.sub.1 and
##STR25## p = 0 p = 1
n = 0, 1, 2 n = 0;
______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 7
Dependent Claim
291 words
A semiconductor element comprising a support having thereon a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##STR21## in which: J represents either R 1 or a group having the formula ##STR22## K represents either R 3 or a group having the formula ##STR23## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and n and p are each integers having the following combinations of values: ______________________________________
##STR24##
and K represents R.sub.3,
p = 0 n = 0, 1, 2, 3
when J represents R.sub.1 and
K represents R.sub.3
p = 0 n = 0, 1, 2
p = 1 n = 0, 1
when J represents R.sub.1 and
##STR25## p = 0 p = 1
n = 0, 1, 2 n = 0;
______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.
Claim 8
Dependent Claim
18 words
A semiconductor element as described in claim 5 wherein said semiconductor is in the presence of a binder.
Claim 9
Dependent Claim
62 words
A semiconductor element comprising a support having thereon a semiconductor composition comprising a binder and a semiconductor comprising an amine salt of a member selected from sulfuric acid, hydrobromic acid, fluorboric acid, benzoic acid or p-toluic or p-toluenesulfonic acid together with a member selected from the group consisting of N-{p-[4-(p-methoxy anilino) anilino]phenyl}-1,4-benzoquinone imine, N-[p-(1,4-benzoquinone diimino) phenyl]-N'-phenyl-1,4-benzoquinone diimine, N-(p-anilinophenyl)-'-(p-aminophenyl)-1,4-benzoquinone diimine, and N-[p-(4-anilino)-anilinophenyl]-1,4-benzoquinone imine.
Claim 10
Dependent Claim
62 words
A semiconductor element comprising a support having thereon a semiconductor composition comprising a binder and a semiconductor comprising an amine salt of a member selected from sulfuric acid, hydrobromic acid, fluorboric acid, benzoic acid or p-toluic or p-toluenesulfonic acid together with a member selected from the group consisting of N-{p-[4-(p-methoxy anilino) anilino]phenyl}-1,4-benzoquinone imine, N-[p-(1,4-benzoquinone diimino) phenyl]-N'-phenyl-1,4-benzoquinone diimine, N-(p-anilinophenyl)-'-(p-aminophenyl)-1,4-benzoquinone diimine, and N-[p-(4-anilino)-anilinophenyl]-1,4-benzoquinone imine.
Claim 11
Dependent Claim
25 words
A semiconductor element as described in claim 7, wherein the semiconductor composition has a protective layer adjacent thereto, said protective layer comprising a film-forming polymer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-23 | 1980-11-22 | 1981-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-23 | 1984-11-22 | 1985-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-23 | 1988-11-22 | 1989-05-24 | $7700.00 | Window Closed / Lapsed |