Organic semiconductors used in photoconductor element

Claim 2

A semiconductor element comprising a support having thereon a photoconductor layer and a semiconductor composition comprising a binder and a semiconductor having organic solvent solubility and represented by the expression: D[A].sub.9 wherein: D represents a moiety having the structure: ##STR14## in which J represents either R 1 or a group having the formula ##STR15## K represents either R 3 or a group having the formula ##STR16## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and

Claim 3

n and p are each integers having the following combination of values: ______________________________________ ##STR17## and K represents R.sub.3, p=0, n=0,1,2,3,4,5 p=1 n=0,1,2,3 p=2 n=0,1 when J represents R.sub.1 and K represents R.sub.3, p=0 n=0,1,2,3,4,5,6 p=1 n=0,1,2,3,4 p=2 n=0,1,2 p=3 n=0 when J represents R.sub.1 and ##STR18## p=0 n=0,1,2,3,4,5 p=1 n=0,1,2,3 p=2 n=0,1 ______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.

Claim 4

n and p are each integers having the following combination of values: ______________________________________ ##STR17## and K represents R.sub.3, p=0, n=0,1,2,3,4,5 p=1 n=0,1,2,3 p=2 n=0,1 when J represents R.sub.1 and K represents R.sub.3, p=0 n=0,1,2,3,4,5,6 p=1 n=0,1,2,3,4 p=2 n=0,1,2 p=3 n=0 when J represents R.sub.1 and ##STR18## p=0 n=0,1,2,3,4,5 p=1 n=0,1,2,3 p=2 n=0,1 ______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.

Claim 5

A semiconductor element as described in claim 1, wherein the semiconductor has organic solvent solubility and is represented by the expression: D[A].sub.q wherein: D represents a moiety having the structure: ##STR19## in which: J represents either R 1 or a group having the formula ##STR20## K represents either R 3 or a group having the formula ##STR21## R 1 and R 4 are each selected from the group consisting of a hydrogen atom, a hydroxy radical, a lower alkyl radical, a lower alkoxy radical, an amino radical, an aryl radical, an acyl radical, a carboxylate radical, a thio radical, a nitrate radical, a sulfonate radical, a halogen atom and a cyano radical; R 2 and R 3 each represent (1) an uncharged radical selected from the group consisting of oxo, imino and thioxo radicals or (2) a charged radical selected from the group consisting of alkoxonium, iminium, and sulfonium radicals; and n and p are each integers having the following combinations of values: ______________________________________ ##STR22## and K represents R.sub.3, p= 0 n = 0, 1, 2, 3 when J represents R.sub.1 and K represents R.sub.3 p = 0 n = 0, 1, 2 p = 1 n = 0, 1 when J represents R.sub.1 and ##STR23## p = 0 n = 0, 1, 2 p = 1 n = 0; ______________________________________ A is an acid when R 2 and R 3 are each an uncharged radical and when R 2 and/or R 3 is a charged radical, A is an anion derived from an acid; and q represents the number of A moieties associated with each D and is a positive integer that is greater than 0 and less than or equal to the number of amine groups in the D moiety.

Claim 6

A semiconductor element as described in claim 1 wherein the moiety A is selected from the group consisting of an inorganic acid, an organic acid and an acidic polymer.

Claim 7

A semiconductor element as described in claim 1, wherein the semiconductor is an amine salt of a member selected from sulfuric acid, hydrobromic acid, fluoboric acid, benzoic acid p-toluic or p-toluenesulfonic acid together with a member selected from the group consisting of N-{p-[4-(p-methoxy anilino) anilino]phenyl}-1,4-benzoquinone imine, N-[p-(1,4-benzoquinone diimino) phenyl]-N'-phenyl-1,4-benzoquinone diimine, N-(p-anilinophenyl)-N'-(p-aminophenyl)-1,4-benzoquinone diimine, and N-[p-(4-anilino)-anilinophenyl]-1,4-benzoquinone imine.

Claim 8

A semiconductor element as described in claim 1, and also comprising a protective layer between said photoconductor layer and said semiconductor composition.