US4024420A
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US
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Deep diode atomic battery
Assignee: General Electric Co
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Filing: 1975-06-27
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Granted: 1977-05-17
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Expires: 1995-06-27
Abstract
Abstract A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal.
Inventors
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:09
CPC Classifications
G; G21; G21H; G21H1/00; G21H1/06
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
283 words
A deep diode atomic battery comprising: a body of single crystal semiconductor material having a preferred crystallographic structure, a vertical axis, first and second major opposed surfaces, a peripheral side surface, a selected resistivity and a first type conductivity; at least one of the major opposed surfaces having a preferred planar orientation which is one selected from (111), (110) and (100); a plurality of regions of second and opposite type conductivity and a selected resistivity disposed in the body; each region having a preferred crystallographic orientation and extending substantially parallel to a preferred axis of the crystallographic structure between, and terminating in, the two major opposed surfaces and having two opposed end surfaces; one of the two end surfaces of each region is coextensive with one of the major surfaces; the other end surface of each region is coextensive with the other one of the major opposed surfaces; the material of each of the second regions being of recrystallized semiconductor material of the body having solid solubility of a dopant material therein to impart the second type conductivity and selective level of resistivity thereto; the dopant material being substantially uniformly distributed throughout the second region, its solid solubility and its concentration being determined by a selected temperature range at which it was distributed within the region when migrated therethrough; a P-N junction formed by the contiguous surfaces of the materials of each region and the body; means for electrically connecting the first regions into a first internal electrical circuit arrangement; means for electrically connecting the second regions into a second internal electrical circuit arrangement; means for disposing a radioactive source within the body in a predetermined relationship with the first and second regions.
Claim 2
Dependent Claim
283 words
A deep diode atomic battery comprising: a body of single crystal semiconductor material having a preferred crystallographic structure, a vertical axis, first and second major opposed surfaces, a peripheral side surface, a selected resistivity and a first type conductivity; at least one of the major opposed surfaces having a preferred planar orientation which is one selected from (111), (110) and (100); a plurality of regions of second and opposite type conductivity and a selected resistivity disposed in the body; each region having a preferred crystallographic orientation and extending substantially parallel to a preferred axis of the crystallographic structure between, and terminating in, the two major opposed surfaces and having two opposed end surfaces; one of the two end surfaces of each region is coextensive with one of the major surfaces; the other end surface of each region is coextensive with the other one of the major opposed surfaces; the material of each of the second regions being of recrystallized semiconductor material of the body having solid solubility of a dopant material therein to impart the second type conductivity and selective level of resistivity thereto; the dopant material being substantially uniformly distributed throughout the second region, its solid solubility and its concentration being determined by a selected temperature range at which it was distributed within the region when migrated therethrough; a P-N junction formed by the contiguous surfaces of the materials of each region and the body; means for electrically connecting the first regions into a first internal electrical circuit arrangement; means for electrically connecting the second regions into a second internal electrical circuit arrangement; means for disposing a radioactive source within the body in a predetermined relationship with the first and second regions.
Claim 3
Dependent Claim
43 words
The deep diode atomic battery of claim 1 wherein: the distance from any P-N junction at any point in a region of first type conductivity is less than approximately one diffusion length of a minority carrier in the region of first type conductivity.
Claim 4
Dependent Claim
43 words
The deep diode atomic battery of claim 2 wherein: the distance from any P-N junction at any point in a region of second type conductivity is less than approximately one diffusion length of a minority carrier in the region of second type conductivity.
Claim 5
Dependent Claim
27 words
The deep diode atomic battery of claim 1 wherein: each P-N junction is substantially perpendicular to the two major opposed surfaces and substantially parallel to each other.
Claim 6
Dependent Claim
20 words
The deep diode atomic battery of claim 4 wherein the first and second regions form a parallel planar lamellar array.
Claim 7
Dependent Claim
15 words
The deep diode atomic battery of claim 5 wherein: the preferred planar orientation is (111).
Claim 8
Dependent Claim
39 words
The deep diode atomic battery of claim 5 wherein: the preferred planar orientation is (111), and the second regions are oriented in a preferred wire direction which is one selected from the group consisting of (110), (101) and (011).
Claim 9
Dependent Claim
39 words
The deep diode atomic battery of claim 5 wherein: the preferred planar orientation is (111), and the second regions are oriented in a preferred wire direction which is one selected from the group consisting of (112), (121) and (211).
Claim 10
Dependent Claim
54 words
The deep diode atomic battery of claim 5 in which the two major opposed surfaces of the semiconductor body are parallel to a single (100) crystallographic plane and in which the planar P-N junctions are parallel to a single crystallographic plane selected from the group consisting of the (011) and the (011) crystallographic planes.
Claim 11
Dependent Claim
41 words
The deep diode atomic battery of claim 5 in which the two major opposed surfaces of the semiconductor body are parallel to a single (110) crystallographic plane and in which the planar P-N junctions are parallel to the (001) crystallographic plane.
Claim 12
Dependent Claim
34 words
The deep diode atomic battery of claim 4 wherein the P-N junctions formed by the contiguous surfaces of each pair of first and second regions of opposite type conductivity define a parallel columnar array.
Claim 13
Dependent Claim
37 words
The deep diode atomic battery of claim 6 wherein each second region has a triangular cross-section and the three sides of the region are parallel to the (112) plane, the (121) plane and the (211) plane, respectively.
Claim 14
Dependent Claim
68 words
The deep diode atomic battery of claim 1 wherein the preferred planar orientation is (100); each second region has a square cross-section and two pairs of sides, the sides of each pair being parallel to each other, and each side of one pair lies in, or is parallel to the (011) crystallographic plane and each side of the other pair lies in, or is parallel to, the (011).
Claim 15
Dependent Claim
70 words
The deep diode atomic battery of claim 11 wherein the preferred planar orientation is (110); each second region has a diamond-like cross-section, and two pairs of sides, the sides of each pair being parallel to each other, and each side of one pair lies in, or is parallel to, the (001) crystallographic plane and each side of the other pair lies in, or is parallel to, the (111) crystallographic plane.
Claim 16
Dependent Claim
33 words
The deep diode atomic battery of claim 6 wherein each second region has a hexagonal cross-section and three pairs of sides parallel to the (112), the (121) and the (211) crystallographic planes, respectively.
Claim 17
Dependent Claim
58 words
The deep diode atomic battery of claim 1 wherein means for disposing a radioactive source within the semiconductor body includes walls defining an aperature extending entirely between, and terminating in, the two major opposed surfaces of the body and substantially aligned with the vertical axis and centered with respect to the peripheral side surface of the semiconductor body.
Claim 18
Dependent Claim
50 words
The deep diode atomic battery of claim 1 wherein the means for disposing a radioactive source within the semiconductor body includes a deep buried layer of radioactive material located substantially midway between the two major opposed surfaces and centered with respect to the peripheral side surfaces of the semiconductor body.
Claim 19
Dependent Claim
112 words
The deep diode atomic battery of claim 1 wherein the means for disposing a radioactive source within the semiconductor body includes a third region having a preferred crystallographic orientation and an vertical axis substantially aligned with the vertical axis of the body and extending between, and terminating in, the two major opposed surfaces, the material of third region being recrystallized semiconductor material of the body having solid solubility of at least a radioactive material therein, at least the radioactive material being substantially uniformly distributed throughout the third region, its solid solubility and its concentration being determined by a selected temperature range at which it was distributed within the region when migrated therethrough.
Claim 20
Dependent Claim
38 words
The deep diode atomic battery of claim 1 wherein the means for disposing a radioactive source within the semiconductor body includes a symmetric array of apertures substantially midway between the two major opposed surfaces of the semiconductor body.
Claim 21
Dependent Claim
44 words
The deep diode atomic battery of claim 1 wherein the means for disposing a radioactive source within the semiconductor body includes a symmetric array of deep buried layers of radioactive material located substantially midway between the two major opposed surfaces of the semiconductor body.
Claim 22
Dependent Claim
32 words
The deep diode atomic battery of claim 1 wherein the means for disposing a radioactive source within the semiconductor body includes the neutron activation of the semiconductor material of the semiconductor body.
Claim 23
Dependent Claim
16 words
The deep diode atomic battery of claim 1 wherein the radioactive source is a gamma emitter.
Claim 24
Dependent Claim
16 words
The deep diode atomic battery of claim 1 wherein the radioactive source is an x-ray emitter.
Claim 25
Dependent Claim
16 words
The deep diode atomic battery of claim 18 wherein the radioactive source is a Beta emitter
Claim 26
Dependent Claim
16 words
The deep diode atomic battery of claim 19 wherein the radioactive source is a Beta emitter.
Claim 27
Dependent Claim
16 words
The deep diode atomic battery of claim 20 wherein the radioactive source is a Beta emitter.
Claim 28
Dependent Claim
26 words
The deep diode atomic battery of claim 1 wherein the energy of the radioactive emissions is less than the radiation damage threshold of the semiconductor material.
Claim 29
Dependent Claim
39 words
The deep diode atomic battery of claim 1 wherein the rate of decrease in minority carrier lifetime from radiation damage arising from radioactive emissions in the semiconductor body is less than the rate of decay of the radioactive source.
Claim 30
Dependent Claim
21 words
The deep diode atomic battery of claim 22 and including means for electrically connecting the battery into an external electric circuit.
Claim 31
Dependent Claim
21 words
The deep diode atomic battery of claim 23 and including means for electrically connecting the battery into an external electrical circuit.
Claim 32
Dependent Claim
73 words
The deep diode atomic battery of claim 1 and wherein the first internal electrical circuit arrangement includes a plurality of first electrical contacts, each first electrical contact being affixed to, and in an electrically conductive relationship with, only one first region, and the second internal electrical circuit arrangement includes a plurality of second electrical contacts, each second electrical contact being affixed to, and in an electrically conductive relationship with, only one second region.
Claim 33
Dependent Claim
54 words
The deep diode atomic battery of claim 16 and including at least one radial electrical isolation planar region of second type conductivity extending between and terminating in the two opposed major surfaces; dividing the body symmetrically into a plurality of equal radial sectors each containing a plurality of first and second type conductivity regions.
Claim 34
Dependent Claim
93 words
The deep diode atomic battery of claim 32 wherein the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangement.
Claim 35
Dependent Claim
53 words
The deep diode atomic battery of claim 17 wherein at least one radial electrical isolation planar region of second type conductivity extending between, and terminating in the two opposed major surfaces; dividing the body symmetrically into a plurality of equal radial sectors each containing a plurality of first and second type conductivity regions.
Claim 36
Dependent Claim
93 words
The deep diode atomic battery of claim 34 wherein the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangement.
Claim 37
Dependent Claim
48 words
The deep diode atomic battery of claim 18 and including at least one electrical isolation planar region the second type conductivity disposed in the body and extending between, and terminating in, the two opposed major surfaces; dividing the body symmetrically into a plurality of equal cross-sectional area sectors.
Claim 38
Dependent Claim
94 words
The deep diode atomic battery of claim 36 and including the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangement.
Claim 39
Dependent Claim
45 words
The deep diode atomic battery of claim 19 wherein at least one electrical isolation planar region of second type conductivity disposed in the body and extending between, and terminating in, the two opposed major surfaces; dividing the body symmetrically into a plurality of equal sectors.
Claim 40
Dependent Claim
93 words
The deep diode atomic battery of claim 38 wherein the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangement.
Claim 41
Dependent Claim
46 words
The deep diode atomic battery of claim 20 and including at least one electrical isolation planar region of second type conductivity disposed in the body and extending between, and terminating in, the two opposed major surfaces; dividing the body symmetrically into a plurality of equal sectors.
Claim 42
Dependent Claim
93 words
The deep diode atomic battery of claim 40 wherein the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangemens in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangements.
Claim 43
Dependent Claim
46 words
The deep diode atomic battery of claim 21 and including at least one electrical isolation planar region of second type conductivity disposed in the body and extending between, and terminating in, the two opposed major surfaces; dividing the body symmetrically into a plurality of equal sectors.
Claim 44
Dependent Claim
93 words
The deep diode atomic battery of claim 42 wherein the first internal circuit arrangement includes electrically connecting together in parallel circuit arrangement all regions of first type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a first series circuit arrangement, and the second internal circuit arrangement includes electrically connecting together in a parallel circuit arrangement all regions of second type conductivity in each of the plurality of radial sectors and electrically connecting all the parallel circuit arrangements in a second series circuit arrangement.
Claim 45
Dependent Claim
31 words
The deep diode atomic battery of claim 1 wherein the semiconductor material is silicon, the conductivity of the first regions is N-type, and the conductivity of the second regions is P-type.
Claim 46
Dependent Claim
38 words
The deep diode atomic battery of claim 44 wherein each of the second regions has aluminum as a dopant impurity therein, the concentration of which is the solid solubility of aluminum in silicon at the migration processing temperature.
Claim 47
Dependent Claim
15 words
The deep diode atomic battery of claim 1 wherein the semiconductor material is gallium arsenide.
Claim 48
Dependent Claim
14 words
The deep diode atomic battery of claim 1 wherein the semiconductor material is germanium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |