US4024418A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit CMOS inverter structure
Assignee: Robert Bosch GmbH
•
Filing: 1976-02-04
•
Granted: 1977-05-17
•
Expires: 1996-02-04
Abstract
Abstract To provide for feedback between output and input, a high-resistance feedback circuit is formed of two serially connected oppositely poled semiconductor diodes, integrated with the two complementary MOS transistors on a common semiconductor chip. Preferably, the diodes are located within a window formed in the guard bands on the chip, alongside one of the transistors, and connected with conductive strips to the respective input and output terminals of the transistors.
Inventors
- 👤 Rainer Hankel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:18
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/0948; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D84/82; H10D84/83; H10D84/85
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
Integrated circuit inverter structure comprising a semiconductor chip (11); two complementary MOS transistors (2, 3) formed on the chip, each having a control electrode and a drain electrode, the control electrodes of the transistors being connected together and forming the input (4) of the inverter and the drain electrodes of the transistors being connected together and forming the output (5) of the inverter, and comprising in accordance with the invention a high-resistance independent feedback circuit connected only to the inverter output (5) and to the inverter input (4) to stabilize the working point thereof having a feedback impedance in the order of about at least 10 Megohms and formed by two oppositely poled, serially connected semiconductor diodes (6, 7), in which their common terminals comprise a single unconnected electrode, integrated with the transistors (2, 3) on the same semi-conductor chip (11) to form a common integrated inverter structure on a single chip substrate.
Claim 2
Dependent Claim
153 words
Integrated circuit inverter structure comprising a semiconductor chip (11); two complementary MOS transistors (2, 3) formed on the chip, each having a control electrode and a drain electrode, the control electrodes of the transistors being connected together and forming the input (4) of the inverter and the drain electrodes of the transistors being connected together and forming the output (5) of the inverter, and comprising in accordance with the invention a high-resistance independent feedback circuit connected only to the inverter output (5) and to the inverter input (4) to stabilize the working point thereof having a feedback impedance in the order of about at least 10 Megohms and formed by two oppositely poled, serially connected semiconductor diodes (6, 7), in which their common terminals comprise a single unconnected electrode, integrated with the transistors (2, 3) on the same semi-conductor chip (11) to form a common integrated inverter structure on a single chip substrate.
Claim 3
Dependent Claim
37 words
Structure according to claim 1, wherein the transistors are located within guard bands (13, 14) formed on the chip, and the diodes are located within an island formed within the guard band of one of the transistors.
Claim 4
Dependent Claim
64 words
Structure according to claim 1, wherein the single electrode of the two semiconductor diodes is formed as a single zone of a first conductivity, to provide the common terminal for both said diodes, and two zones of opposite conductivity diffused in said single zones, and contact means connecting the input, and the output of the inverter, respectively, to said respective zones of opposite conductivity.
Claim 5
Dependent Claim
18 words
Structure according to claim 3, wherein the contact means are connected only to said zones of opposite conductivity.
Claim 6
Dependent Claim
120 words
Structure according to claim 3, wherein the chip is n-conductive silicon chip, and said single zone is formed by a p-conductive well (23) diffused into the n-conductive chip, two zones of N + conductivity (24, 25) are diffused into the p-conductive well to form said two zones of opposite conductivities; input and output conductive strips (36, 35) commonly connecting the complementary MOS transistors on the chip and additionally connecting, respectively, with the two zones (24, 25) of little n-conductivity; and a cover of insulating material (26) over said chip and over said well in locations not covered by the input and output strips, said cover of insulating material covering the portions of p-conductive well at the surface of the chip.
Claim 7
Dependent Claim
145 words
Structure according to claim 1, wherein the chip is an n-conductive silicon chip; a p-type conductive well (23) is diffused into n-conductive chip; two zones of N +-conductivity (24, 25) are diffused into the p-conductivity well to form, together with said well, said two oppositely poled semi-conductive diodes (6, 7); input and output conductive strips (36, 35) are provided, commonly connecting the complementary MOS transistors on the chip and additionally connecting respectively, with said two zones (24, 25) of n-conductivity; and a cover of insulating material (26) is provided over said chip and over said well in locations not covered by the input and output strips, said cover of insulating material covering portions of the p-conductive well at the surface of the chip whereby said surface will be unconnected while forming, within said chip, the common terminal for said oppositely poled, serially connected semi-conductor diodes.
References Cited (Backward Citations)
US3500062A
Cited
US3510684A
Cited
US3512058A
Cited
US3539928A
Cited
US3673428A
Cited
US3855549A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-16 | 1980-11-15 | 1981-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-16 | 1984-11-15 | 1985-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-16 | 1988-11-15 | 1989-05-17 | $7700.00 | Window Closed / Lapsed |