Semiconducting ceramics containing vanadium oxide

Claim 2

A fired barium titate ceramic semicondutor composition containing: barium titanate; at least one semiconductor activator selected from the group consisting of rare earth elements, Sb, Bi, Nb and Ta; and vanadium oxide in the amount of about 0.001 to 0.5 percent V by weight, based on BaTiO 3 , said vandium having a valence of no greater than 4.

Claim 3

The semiconductor composition of claim 1 comprising about 0.05 to 1.5 percent by weight SiO 2 .

Claim 4

The semiconductor composition of claim 1, wherein the titanate is partially substituted by at least one member of the group consisting of Sr, Pb, another titanate, zirconate and stannate.

Claim 5

A fired barium titanate positive temperature coefficient semiconductor ceramic composition consisting essentially of a homogeneous barium titanate mixture having about 0.001 to 0.5 weight percent vanadium at a valence not greater than 4, and an activating amount of at least one semiconductive activator selected from the group consisting of rareearth elements, Sb, Bi, Nb and Ta.

Claim 6

A fired barium titanate positive temperature coefficient semiconductor ceramic composition consisting essentially of a homogeneous barium titanate mixture having about 0.001 to 0.5 weight percent vanadium at a valence not greater than 4, and an activating amount of at least one semiconductive activator selected from the group consisting of rareearth elements, Sb, Bi, Nb and Ta.

Claim 7

An improved process for making a semiconducting ceramic composition, having a positive temperature coefficient characteristic of resistivity exhibited at a predetermined temperature and a predetermined range of specific resistance corresponding to a change with temperature from said predetermined temperature corresponding to a first value of specific resistance in said predetermined range to a maximum temperature corresponding to the maximum value of specific resistance in said predetermined range, including the steps of: mixing a barium titanate ceramic forming material with a predetermined amount of a semi-conductive activator compound selected from the group consisting of rare earth elements, Sb, Bi, Nb, and Ta to control the semi-conducting properties of said ceramic composition; calcining the mixture at approximately 1150° C for about two hours; pulverizing said calcined mixture; molding said pulverized mixture into a predetermined shape; wherein the improvement comprises adding vanadium in a range of about 0.001 to 0.5 weight percent to said mixture, prior to said calcining step, for controlling the specific resistance at room temperature and increasing the range of change in the specific resistance of said ceramic composition in a range of from 1.2 to 140 times said predetermined range; and firing said molded mixture in a temperature range of approximately 1300° to 1400° C for approximately two hours, thereby producing a semi-conducting ceramic composition having a positive temperature coefficient characteristic of resistivity.

Claim 8

An improved process for making a semiconducting ceramic composition, having a positive temperature coefficient characteristic of resistivity exhibited at a predetermined temperature and a predetermined range of specific resistance corresponding to a change with temperature from said predetermined temperature corresponding to a first value of specific resistance in said predetermined range to a maximum temperature corresponding to the maximum value of specific resistance in said predetermined range, including the steps of: mixing a barium titanate ceramic forming material with a predetermined amount of a semi-conductive activator compound selected from the group consisting of rare earth elements, Sb, Bi, Nb, and Ta to control the semi-conducting properties of said ceramic composition; calcining the mixture at approximately 1150° C for about two hours; pulverizing said calcined mixture; molding said pulverized mixture into a predetermined shape; wherein the improvement comprises adding vanadium in a range of about 0.001 to 0.5 weight percent to said mixture, prior to said calcining step, for controlling the specific resistance at room temperature and increasing the range of change in the specific resistance of said ceramic composition in a range of from 1.2 to 140 times said predetermined range; and firing said molded mixture in a temperature range of approximately 1300° to 1400° C for approximately two hours, thereby producing a semi-conducting ceramic composition having a positive temperature coefficient characteristic of resistivity.