US4022625A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polishing composition and method of polishing
Assignee: NL Industries Inc
•
Filing: 1974-12-24
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Granted: 1977-05-10
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Expires: 1994-12-24
Abstract
Abstract A polishing composition suitable for polishing semi-conductive materials, e.g. silicon and germanium, comprises an aqueous slurry containing as a polishing agent a finely divided calcium-titanium-zirconium-oxygen product having the empirical formula CaTiZr 3 O 9 . Additional materials that may be present include sodium hypochlorite, sodium metasilicate, potassium hydroxide, and glycerine.
Inventors
- 👤 William A. Shelton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:27
CPC Classifications
C; C09; C09G; C09G1/00; C09G1/02
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
48 words
A polishing composition suitable for polishing the surfaces of semi-conductors which comprises an aqueous slurry containing a finely divided calcium-titanium-zirconium-oxygen compound in which the atomic ratio of Ca: Ti: Zr: O is 1:1:3:9, said slurry containing a water-soluble oxidizing agent and having a pH of at least 10.
Claim 2
Dependent Claim
48 words
A polishing composition suitable for polishing the surfaces of semi-conductors which comprises an aqueous slurry containing a finely divided calcium-titanium-zirconium-oxygen compound in which the atomic ratio of Ca: Ti: Zr: O is 1:1:3:9, said slurry containing a water-soluble oxidizing agent and having a pH of at least 10.
Claim 3
Dependent Claim
15 words
A polishing composition as defined in claim 1 wherein said oxidizing agent is sodium hypochlorite.
Claim 4
Dependent Claim
14 words
A polishing composition as defined in claim 2 wherein said composition contains sodium metasilicate.
Claim 5
Dependent Claim
21 words
A polishing composition as defined in claim 2 wherein said sodium hypochlorite comprises from about 0.5% to 5.0% of said composition.
Claim 6
Dependent Claim
18 words
A polishing composition as defined in claim 2 wherein said sodium hypochlorite comprises about 2% of said composition.
Claim 7
Dependent Claim
19 words
A polishing composition as defined in claim 5 wherein a small but stabilizing amount of sodium metasilicate is present.
Claim 8
Dependent Claim
26 words
A polishing composition as defined in claim 1 wherein said slurry contains sodium hypochlorite and sodium metasilicate and has a pH of between 12 and 13.
Claim 9
Dependent Claim
53 words
A process for polishing the surfaces of semiconductive materials which comprises applying thereto in a polishing operation an aqueous slurry containing a finely divided calcium-titanium-zirconium-oxygen compound in which the atomic ratio of Ca: Ti: Zr: O is 1:1:3:9, said slurry containing a water-soluble oxidizing agent and having a pH of at least 10.
Claim 10
Dependent Claim
53 words
A process for polishing the surfaces of semiconductive materials which comprises applying thereto in a polishing operation an aqueous slurry containing a finely divided calcium-titanium-zirconium-oxygen compound in which the atomic ratio of Ca: Ti: Zr: O is 1:1:3:9, said slurry containing a water-soluble oxidizing agent and having a pH of at least 10.
Claim 11
Dependent Claim
22 words
A process as set forth in claim 8 in which said oxidizing agent is from about 0.5% to 5.0% of sodium hypochlorite.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-09 | 1980-11-08 | 1981-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-09 | 1984-11-08 | 1985-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-09 | 1988-11-08 | 1989-05-10 | $7700.00 | Window Closed / Lapsed |