US4016505A
Expired / Lapsed
US
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Double heterostructure semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1975-08-28
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Granted: 1977-04-05
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Expires: 1995-08-28
Abstract
Abstract A double-heterostructure injection laser can be improved to have a low threshold current. The improvement is obtained when the active region of GaAs or Gal-yAlyAs consists of several component layers wherein the central layer has the highest carrier concentrations and the layers on both sides of the central layer have lower carrier concentrations and the farther the outer layers are apart from the central layer, the lower are their carrier concentrations.
Inventors
- 👤 Kunio Itoh
- 👤 Morio Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:45
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S5/34; H01S5/343; H01S5/34313; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01S5/32; H01S5/323; H01S5/32308; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
59 words
In a semiconductor laser of double heterostructure including an active layer of GaAs having more than two component layers, the improvement comprising: the central component layer having the highest carrier concentration and the outer component layers having lower carrier concentrations, with the further the outer component layers are from the central component layer the lower their carrier concentrations being.
Claim 2
Dependent Claim
59 words
In a semiconductor laser of double heterostructure including an active layer of GaAs having more than two component layers, the improvement comprising: the central component layer having the highest carrier concentration and the outer component layers having lower carrier concentrations, with the further the outer component layers are from the central component layer the lower their carrier concentrations being.
Claim 3
Dependent Claim
158 words
A semiconductor laser of double heterostructure, comprising: a substrate of GaAs of one conductivity type, a first epitaxially grown layer of Ga 1-x Al x As of said one conductivity type, the first layer being on the substrate, an active region of GaAs of the one conductivity type having more than two component layers, with specified carrier concentrations, respectively, the active region being on the first layer, the central component layer having the highest carrier concentration, and the farther the outer parts of said active region being apart from the central component layer the lower are their carrier concentrations, a third epitaxially grown layer of Ga 1-x Al x As of the conductivity type opposite to those of the substrate and the first grown layer, the third layer being on the active region, and a fourth epitaxially grown layer of GaAs of the same conductivity type with the third layer, the fourth layer being on the third layer.
Claim 4
Dependent Claim
158 words
A semiconductor laser of double heterostructure, comprising: a substrate of GaAs of one conductivity type, a first epitaxially grown layer of Ga 1-x Al x As of said one conductivity type, the first layer being on the substrate, an active region of GaAs of the one conductivity type having more than two component layers, with specified carrier concentrations, respectively, the active region being on the first layer, the central component layer having the highest carrier concentration, and the farther the outer parts of said active region being apart from the central component layer the lower are their carrier concentrations, a third epitaxially grown layer of Ga 1-x Al x As of the conductivity type opposite to those of the substrate and the first grown layer, the third layer being on the active region, and a fourth epitaxially grown layer of GaAs of the same conductivity type with the third layer, the fourth layer being on the third layer.
References Cited (Backward Citations)
US3456209A
Cited
US3911376A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-04 | 1980-10-04 | 1981-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-04 | 1984-10-04 | 1985-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-04 | 1988-10-04 | 1989-04-05 | $7700.00 | Window Closed / Lapsed |