US4015893A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compound semiconductor optical integrated circuit having isolation zones for light transmission
Assignee: Individual
•
Filing: 1975-08-25
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Granted: 1977-04-05
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Expires: 1995-08-25
Abstract
Abstract An isolation zone for light transmission is formed in a compound semiconductor optical integrated circuit by selective oxidation of a compound semiconductor surface by oxygen plasma.
Inventors
- 👤 Takuo Sugano
- 👤 Yoshifumi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/6319
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
133 words
A compound semiconductor optical integrated circuit having isolation zones for light transmission comprising a compound semiconductor substrate selected from a group consisting of GaP and GaAs, a compound semiconductor layer of GaAs 0 .6 P 0 .4 applied through an epitaxial growth on said substrate, and plasma oxide films in a given pattern in the compound semiconductor layer formed to a depth extending to the compound semiconductor substrate and forming isolation zones for light transmission, the compound semiconductor layer having a constant refractive index greater than the refractive index of the plasma oxide films and the refractive index of the oxide films gradually decreasing from the boundary with the compound semiconductor layer in the direction of oxide film inside, the compound semiconductor layer between the oxide films serving as a light transmission path.
Claim 2
Dependent Claim
133 words
A compound semiconductor optical integrated circuit having isolation zones for light transmission comprising a compound semiconductor substrate selected from a group consisting of GaP and GaAs, a compound semiconductor layer of GaAs 0 .6 P 0 .4 applied through an epitaxial growth on said substrate, and plasma oxide films in a given pattern in the compound semiconductor layer formed to a depth extending to the compound semiconductor substrate and forming isolation zones for light transmission, the compound semiconductor layer having a constant refractive index greater than the refractive index of the plasma oxide films and the refractive index of the oxide films gradually decreasing from the boundary with the compound semiconductor layer in the direction of oxide film inside, the compound semiconductor layer between the oxide films serving as a light transmission path.
References Cited (Backward Citations)
US3922062A
Cited
US3666548A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-04 | 1980-10-04 | 1981-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-04 | 1984-10-04 | 1985-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-04 | 1988-10-04 | 1989-04-05 | $7700.00 | Window Closed / Lapsed |