Cmos oscillator with first and second mos transistors of opposed type integrated on the same substrate

Claim 2

A CMOS oscillator in which the oscillator circuit comprises a first and a second MOS transistor of opposed type integrated on the same substrate, the source-drain path of the first transistor being connected in series with the drain-source path of the second transistor between the terminals of a voltage supply and the drain and gate of the first transistor being coupled to each other through a frequency determining network, and at least a third MOS transistor (T 6 , T 8 , T 12 ) of the same channel type as the second transistor, integrated on the same substrate, the sources of the said second and third transistors being connected together to one terminal of the voltage supply and the gates thereof being connected together to a point (P) at a potential such that the mean drain current of the first transistor is maintained at a value just higher than the value at which oscillation starts.

Claim 3

An oscillator as claimed in claim 1, in which the drain of the third transistor (T 6 ) is connected on the one hand to the gate of the same and, on the other hand, by means of a resistance (R 1 ) to the first terminal of the voltage supply.

Claim 4

An oscillator as claimed in claim 1, comprising a pair of complementary MOS transistors comprising said third transistor (T 6 ) and a fourth transistor (T 5 ) of the same channel type as the first and having a common node at their drains, the gate of the third transistor (T 6 ) being connected to this common connection point of the drains and the gate of the fourth transistor being connected to the second terminal of the voltage supply, the source of this fourth transistor being connected to the first terminal of this voltage supply.

Claim 5

An oscillator as claimed in claim 1, comprising a pair of MOS transistors of opposed type (T 3 , T 4 ) which are part of the same integrated circuit and which are so dimensioned that the quotients of the ratio width/length of the channel of each of them by the corresponding dimensional ratio of the channel of the transistor of the same type of the first and second transistors, will be equal, the source and gate electrodes of the transistors of said pair being connected respectively to those of the first and second transistors and the common connection point of the drains of said pair of transistors constituting the output of the oscillator.

Claim 6

An oscillator as claimed in claim 1, comprising a pair of MOS transistors of opposed type (T 3 , T 4 ) which are part of the same integrated circuit and which are so dimensioned that the quotients of the ratio width/length of the channel of each of them by the corresponding dimensional ratio of the channel of the transistor of the same type of the first and second transistors, will be equal, the sources of the transistors of said pair being connected respectively to those of the first and second transistors, the gate of the transistor (T 4 ) of the same channel type as the second being connected to that of the latter, the gate of the transistor of the same channel type as the first being connected to the drain of this latter and the common connection point of the drains of said pair of transistors constituting the output of the oscillator.

Claim 7

An oscillator as claimed in claim 1, comprising a pair of complementary MOS transistors comprising the third transistor (T 8 ) and a fourth transistor (T 7 ) of the same channel type as the first and having a common node at the drains, these two transistors being so dimensioned that the quotient of the ratio width/length of the channel of the third transistor by the corresponding ratio of the second transistor will be greater than the quotient of the ratio width/length of the channel of the fourth transistor by the corresponding ratio of the first transistor, the source and gate electrodes of the fourth transistor being connected respectively to those of the first transistor, and further comprising a control transistor (T 10 ) of the same channel type as the second transistor, the source of the control transistor being connected to the second terminal of the voltage supply, the gate of this transistor being connected to the common connection point of the drains of the third and fourth transistors and the drain of the control transistor being connected on the one hand to the gate of the second transistor and on the other hand by means of a resistance (R 2 ) shunted by a capacitance (C 3 ) to the first terminal of the voltage supply.

Claim 8

An oscillator as claimed in claim 1, comprising a pair of complementary MOS transistors comprising the third transistor (T 8 ) and a fourth transistor (T 7 ) of the same channel type as the first and having a common node at the drains, these two transistors being so dimensioned that the quotient of the ratio width/length of the channel of the third transistor by the corresponding ratio of the second transistor will be greater than the quotient of the ratio width/length of the channel of the fourth transistor by the corresponding ratio of the first transistor, the source and gate electrodes of the fourth transistor being connected respectively to those of the first transistor, and further comprising a control transistor (T 10 ) of the same channel type as the second transistor, the source of the control transistor being connected to the second terminal of the voltage supply, the gate of this transistor being connected to the common connection point of the drains of the third and fourth transistors and the drain of the control transistor being connected on the one hand to the gate of the second transistor and on the other hand by means of a transistor (T 9 ) with a long channel of the same type as that of the first transistor, whose gate, source and drain are connected respectively to the second and first terminals of the voltage supply and to the drain of the control transistor, said long channel transistor being shunted by a capacitance (C 3 ) to the first terminal of the voltage supply.

Claim 9

An oscillator as claimed in claim 6, comprising a diode (D 3 ) connected in blocking direction between the source and the gate of the control transistor (T 10 ).

Claim 10

An oscillator as claimed in claim 1, comprising a pair of complementary MOS transistors comprising a third transistor (T 12 ) of the same channel type as the first and a fourth transistor (T 11 ) of the same channel type as the first and having a common node at their drains, these two transistors being so dimensioned that the quotient of the ratio width/length of the channel of the third transistor by the corresponding ratio of the second transistor will be smaller than the quotient of the ratio width/length of the channel of the fourth transistor by the corresponding ratio of the first transistor, the gate of the third transistor being connected to the drain of the same and the gates and sources of the first and fourth transistors being connected by means of a low pass filter (R 3 , C 5 ).

Claim 11

An oscillator as claimed in claim 9, in which the low pass filter is constituted by two diodes connected in series, in an opposed sense, between the gates of the first and fourth transistors, and by a capacitance connected between the gate of the fourth transistor and the common connection point of the sources of the first and fourth transistors.

Claim 12

An oscillator as claimed in claim 1, comprising a quartz resonator connected between the drain and the gate of the first transistor, in parallel to a biasing resistance (R o ), and capacitances (C 1 , C 2 ) between drain and source and between gate and source of this transistor.

Claim 13

An oscillator as claimed in claim 11, in which the biasing resistance is replaced by two diodes connected in series in opposed direction.

Claim 14

An oscillator as claimed in claim 1, in which the oscillator circuit comprises a resistance-capacitance network which determines the oscillation frequency.