Semiconductor thermally sensitive switch structure

Claim 2

A semiconductor thermally sensitive switch structure comprising a thermally sensitive semiconductor switch element including at least four semiconductor layers of alternate conductivity and having p-n junctions between said layers and which element can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonnconducting state, electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in the circuit, and heater means on said switch element for heating said semiconductor switch element to switch the latter from its nonconducting state to its conducting state, said heater means being electrically insulated from said semiconductor switch element.

Claim 3

A semiconductor thermally sensitive switch structure as claimed in claim 1 further comprising a common substrate of electrically insulating material on which said semiconductor switch element and said heater means are disposed.

Claim 4

A semiconductor thermally sensitive switch structure as claimed in claim 1 wherein said electrode means comprises an electrode on at least one intermediate layer, and an electrode on one outermost layer and further comprising a resistor, said electrodes being connected through said resistor thereby to control a switching temperature thereof.

Claim 5

A semiconductor thermally sensitive switch structure as claimed in claim 3 wherein said resistor is a variable resistor.

Claim 6

A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, heater means fixedly secured to one surface of said substrate, an electrically insulating layer disposed on the one surface of said substrate including said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which elements can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element being heated by said heater means to switch from its nonconducting state to its conducting state.

Claim 7

A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, heater means fixedly secured to one surface of said substrate, an electrically insulating layer disposed on the one surface of said substrate including said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, and a semiconductor switch element disposed on said electrically insulating layer in electrically insulated relationship with said heater means, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which elements can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element being heated by said heater means to switch from its nonconducting state to its conducting state.

Claim 8

A semiconductor thermally sensitive switch structure as claimed in claim 5 wherein said electrically insulating layer is of boro-silicate glass.

Claim 9

A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, a semiconductor switch element disposed on said substrate, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which element can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element heater means disposed on said semiconductor switch element and an electrically insulating layer between said switch element and said heater means, said heater means heating said semiconductor switch element to switch the latter from its nonconducting state to its conducting state.

Claim 10

A semiconductor thermally sensitive switch structure comprising a substrate of electrically insulating material, a semiconductor switch element disposed on said substrate, said semiconductor switch element including at least four thermally sensitive semiconductor layers of alternate conductivity and having pn junctions between said layers and which element can change between stable conducting and nonconducting states at a switching temperature and which is self-held in the nonconducting state, and electrode means on said switch element for connecting said switch element in an electrical circuit for switching the current flow in said circuit, said switch element heater means disposed on said semiconductor switch element and an electrically insulating layer between said switch element and said heater means, said heater means heating said semiconductor switch element to switch the latter from its nonconducting state to its conducting state.