US4009446A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual diode microwave amplifier
Assignee: Northrop Grumman Guidance and Electronics Co Inc
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Filing: 1976-03-19
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Granted: 1977-02-22
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Expires: 1996-03-19
Abstract
Abstract A Microwave reflection amplifier having improved gain, bandwidth and noise characteristics, uses two negative-resistance diodes, such as Gunn-effect diodes, connected in series across the terminals. The diodes are series resonated by inductance in their leads. The gain and bandwidth are higher than in amplifiers using a single diode. A shunt-resonant circuit is connected across one diode to improve the gain-bandwidth. A second shunt-resonant circuit may be connected across the terminals. At very high frequencies, the amplifier uses strip-line or microstrip circuitry and the shunt resonators are half-wavelength transmission lines.
Inventors
- 👤 Joseph G. De Koning
- 👤 Robert E. Goldwasser
- 👤 Robert J. Hamilton, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:39
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/04; H03F3/10
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
77 words
A microwave reflection amplifier adapted to operate over a selected frequency band comprising: a pair of input-output terminals, two negative-resistance elements connected in series across said terminals, each of said negative-resistance elements comprising a negative-resistance diode in series with a resonating inductor, means for supplying dc bias to said diodes, and a shunt-resonant circuit connected in shunt across one of said negative-resistance elements, said shunt-resonant circuit being shunt-resonant at a frequency in the vicinity of said band.
Claim 2
Dependent Claim
77 words
A microwave reflection amplifier adapted to operate over a selected frequency band comprising: a pair of input-output terminals, two negative-resistance elements connected in series across said terminals, each of said negative-resistance elements comprising a negative-resistance diode in series with a resonating inductor, means for supplying dc bias to said diodes, and a shunt-resonant circuit connected in shunt across one of said negative-resistance elements, said shunt-resonant circuit being shunt-resonant at a frequency in the vicinity of said band.
Claim 3
Dependent Claim
19 words
The amplifier of claim 1 wherein said negative-resistance elements are series-resonant at frequencies in the vicinity of said band.
Claim 4
Dependent Claim
17 words
The amplifier of claim 1 further comprising a second shunt-resonant circuit connected in shunt across said terminals.
Claim 5
Dependent Claim
41 words
The amplifier of claim 1 wherein said means for supplying said dc bias to said diodes is connected to the series circuit of negative-resistance elements at a point between said diodes, whereby said diodes are in parallel across said dc bias.
Claim 6
Dependent Claim
35 words
The amplifier of claim 1 wherein said means for supplying said dc bias is connected to the ends of said series connection of negative-resistance elements, whereby said diodes are in series across said dc bias.
Claim 7
Dependent Claim
22 words
The amplifier of claim 1 wherein said means for supplying said dc bias comprises a rf choke in the bias supply conductor.
Claim 8
Dependent Claim
20 words
The amplifier of claim 1 wherein said resonating inductor comprises a bond wire connecting to one electrode of said diode.
Claim 9
Dependent Claim
16 words
The amplifier of claim 1 wherein said shunt-resonant circuit is a resonant section of transmission line.
Claim 10
Dependent Claim
27 words
The amplifier of claim 8 wherein said resonant section of said transmission line is an open-circuited section, an integral number of half-wavelengths long at said resonant frequency.
Claim 11
Dependent Claim
17 words
The amplifier of claim 3 wherein said second shunt-resonant circuit is a resonant section of transmission line.
Claim 12
Dependent Claim
139 words
A negative-resistance device for amplifying microwave signals over a band near a selected frequency comprising: conductive ground plate means, dielectric spacer means overlaying said ground plate means, rf strip-conductor means bonded to said dielectric spacer means on the face opposite said ground plate means, said strip-conductor means comprising, a first element connected to an input terminal, and a second element comprising a section having a shunt resonance near said selected frequency, a first negative-resistance means connected between said first and second elements of said conductor means, a second negative-resistance means connected between said second element of said strip-conductor means and said ground plate means, each of said negative-resistance means comprising a negative-resistance diode in series with an inductor such that said negative-resistance means has a series resonance near said frequency, and means for supplying dc bias to said diodes.
Claim 13
Dependent Claim
139 words
A negative-resistance device for amplifying microwave signals over a band near a selected frequency comprising: conductive ground plate means, dielectric spacer means overlaying said ground plate means, rf strip-conductor means bonded to said dielectric spacer means on the face opposite said ground plate means, said strip-conductor means comprising, a first element connected to an input terminal, and a second element comprising a section having a shunt resonance near said selected frequency, a first negative-resistance means connected between said first and second elements of said conductor means, a second negative-resistance means connected between said second element of said strip-conductor means and said ground plate means, each of said negative-resistance means comprising a negative-resistance diode in series with an inductor such that said negative-resistance means has a series resonance near said frequency, and means for supplying dc bias to said diodes.
Claim 14
Dependent Claim
18 words
The amplifier of claim 11 further comprising a second shunt-resonant section of strip-conductor connected to said first element.
Claim 15
Dependent Claim
25 words
The device of claim 11 wherein said shunt-resonant section of said strip-conductor means is a section an integral number of half-wavelengths long at said resonance.
Claim 16
Dependent Claim
20 words
The device of claim 11 wherein said means for supplying dc bias comprises strip-conductor means connected to said second element.
Claim 17
Dependent Claim
23 words
The device of claim 14 wherein said strip-conductor means for supplying dc bias comprises resonant sections of strip conductor forming a rf choke.
Claim 18
Dependent Claim
28 words
The device of claim 15 wherein said resonant sections comprise a high-impedance series section approximately 1/4 wavelength long connected to a low-impedance shunt section approximately 1/4 wavelength long.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-22 | 1980-08-23 | 1981-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-22 | 1984-08-23 | 1985-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-22 | 1988-08-23 | 1989-02-22 | $7700.00 | Window Closed / Lapsed |