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US4009299A Expired / Lapsed US ⏱️ 0.0 years remaining

Tin strip formulation for metal to glass seal diodes

Assignee: Motorola Solutions Inc
•
Filing: 1975-10-22
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Granted: 1977-02-22
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Expires: 1995-10-22
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Abstract

Abstract Immersion of semiconductor devices, particularly diodes, having a defective tin plating thereon in a solution of 5 - 20 percent by weight trichloroacetic acid, 0.1 to 5 percent by weight of a compound selected from the group consisting of cationic, anionic, and nonionic surfactants and the balance water effectively removes the tin therefrom. The process is effective at room temperature but preferably is performed at approximately 100 DEG C.

Inventors

  • 👤 Dervin L. Flowers
  • 👤 Richard L. Greeson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 11:36
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/30

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 59 words
A process for the reclamation of semiconductor devices comprising: providing semiconductor devices having a defective tin plating thereon; and immersing said devices, for about 5-10 minutes, in a solution of 5-20 percent by weight trichloroacetic acid, 0.1 to 5 percent by weight of a compound selected from the group consisting of cationic, anionic, nonionic surfactants, and the balance water.
Claim 2
Dependent Claim 59 words
A process for the reclamation of semiconductor devices comprising: providing semiconductor devices having a defective tin plating thereon; and immersing said devices, for about 5-10 minutes, in a solution of 5-20 percent by weight trichloroacetic acid, 0.1 to 5 percent by weight of a compound selected from the group consisting of cationic, anionic, nonionic surfactants, and the balance water.
Claim 3
Dependent Claim 19 words
A process as recited in claim 1 wherein said solution is maintained at a temperature of approximately 100° C.
Claim 4
Dependent Claim 23 words
A process as recited in claim 2 and further including the step of replating said devices in a sulfuric acid (stannous sulfate solution).

References Cited (Backward Citations)

US2721119A Cited
US3072579A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-02-22 1980-08-23 1981-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-02-22 1984-08-23 1985-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-02-22 1988-08-23 1989-02-22 $7700.00 Window Closed / Lapsed

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