US4004285A
Expired / Lapsed
US
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Read-write circuitry for one transistor per bit random access memory
Assignee: Motorola Solutions Inc
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Filing: 1975-06-30
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Granted: 1977-01-18
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Expires: 1995-06-30
Abstract
Abstract A random access memory includes a plurality of one-transistor storage cells. A plurality of sense-write conductors are included, each connected to a plurality of storage cells in a row of storage cells. A plurality of regenerative sense amplifiers are each coupled to two sense-write conductors. A one-transistor dummy storage cell is connected to each sense-write conductor. Read-write circuitry is coupled between a data conductor of the memory chip and a storage node of one of the dummy storage cells of each row of storage cells. The dummy storage cell is selected whenever a storage cell on the opposite side of the regenerative sense amplifier is selected. Charge initially stored in the selected storage cell is redistributed on the opposite sense-write conductor and is subsequently amplified by the sense amplifier, and produced in inverted amplified form at the storage node of the dummy storage cell. Capacitive loading on all of the sense-write conductors of the memory chip during redistribution of charge in the selected storage cell is thereby reduced, thereby increasing the magnitude of the sense-write conductor voltage transitions when a storage cell is selected.
Inventors
- 👤 Alan Richard Bormann
- 👤 Robert Tapei Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:37
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
106 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to first and second groups of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled to said first and second storage nodes for selectively coupling said input-output circuit means to said first and second storage nodes during a portion of a read operation or a write operation.
Claim 2
Dependent Claim
106 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to first and second groups of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled to said first and second storage nodes for selectively coupling said input-output circuit means to said first and second storage nodes during a portion of a read operation or a write operation.
Claim 3
Dependent Claim
59 words
The semiconductor memory as recited in claim 1 wherein each of said plurality of storage cells includes a storage node, a first MOSFET having a drain electrode coupled, respectively, to a one of said sense-write conductors and a source electrode coupled to its storage node and a storage capacitor coupled between said storage node and a common voltage conductor.
Claim 4
Dependent Claim
60 words
The semiconductor memory as recited in claim 2 wherein each of said dummy storage cells includes a MOSFET having its drain coupled to a sense-write conductor, a source electrode coupled to a storage node and a gate electrode coupled to a dummy storage cell selection conductor and a storage capacitor connected between said storage node and said common voltage conductor.
Claim 5
Dependent Claim
67 words
The semiconductor memory as recited in claim 3 wherein said input-output circuit means includes a first MOSFET having its drain connected to said first storage node and its source connected to an input-output conductor and a second MOSFET having its drain connected to said second storage node and its source connected to said data input-output conductor and its gate connected to the gate of said first MOSFET.
Claim 6
Dependent Claim
27 words
The MOS semiconductor random access memory as recited in claim 4 wherein said gates of said first and second MOSFETs are coupled to a row decode circuit.
Claim 7
Dependent Claim
99 words
A semiconductor memory having a plurality of storage cells and a sense-write conductor coupled to a plurality of said storage cells, and a sense amplifier circuit coupled to said sense-write conductor, and a dummy storage cell having a storage node coupled to said sense-write conductor comprising input-output circuit means coupled between said storage node and a data terminal of said semiconductor memory for selectively transferring data between said data terminal and said sense-write conductor during a read operation or a write operation without loading said sense-write conductor at times other than during a read operation or a write operation.
Claim 8
Dependent Claim
99 words
A semiconductor memory having a plurality of storage cells and a sense-write conductor coupled to a plurality of said storage cells, and a sense amplifier circuit coupled to said sense-write conductor, and a dummy storage cell having a storage node coupled to said sense-write conductor comprising input-output circuit means coupled between said storage node and a data terminal of said semiconductor memory for selectively transferring data between said data terminal and said sense-write conductor during a read operation or a write operation without loading said sense-write conductor at times other than during a read operation or a write operation.
Claim 9
Dependent Claim
151 words
A MOS semiconductor random access memory including first and second arrays of one-transistor storage cells arranged in rows and columns, each row of said one-transistor storage cells being coupled, respectively, to a common sense-write conductor each column of said one-transistor storage cells being coupled to a column selection conductor, a plurality of sense amplifiers, one for each row, each coupled, respectively, between said sense-write conductor of said row of said first array and a corresponding sense-write conductor of said row of said second array, a dummy storage cell connected, respectively, to each of said sense-write conductors, said MOS semiconductor random access memory comprising input-output circuit means coupled between a storage node of said dummy storage cell connected to said sense-write conductor of said row of said first array and a storage node of said dummy storage cell connected to said corresponding sense-write conductor of said row of said second storage array.
Claim 10
Dependent Claim
151 words
A MOS semiconductor random access memory including first and second arrays of one-transistor storage cells arranged in rows and columns, each row of said one-transistor storage cells being coupled, respectively, to a common sense-write conductor each column of said one-transistor storage cells being coupled to a column selection conductor, a plurality of sense amplifiers, one for each row, each coupled, respectively, between said sense-write conductor of said row of said first array and a corresponding sense-write conductor of said row of said second array, a dummy storage cell connected, respectively, to each of said sense-write conductors, said MOS semiconductor random access memory comprising input-output circuit means coupled between a storage node of said dummy storage cell connected to said sense-write conductor of said row of said first array and a storage node of said dummy storage cell connected to said corresponding sense-write conductor of said row of said second storage array.
Claim 11
Dependent Claim
72 words
The MOS semiconductor random access memory as recited in claim 7 further including dummy storage cell decode circuit means coupled to a gate electrode of a plurality of said dummy storage cells coupled to sense-write conductors of said first array and also coupled to column decode means for selecting said plurality of dummy storage cells whenever a column of storage cells in said second array is selected by said column decode means.
Claim 12
Independent Claim
78 words
A method of operating a semiconductor memory including a plurality of storage cells coupled to a sense-write conductor coupled to a sense amplifier comprising selectively coupling data between said sense-write conductor and a data terminal of said semiconductor memory through a selection transistor of a dummy storage cell connected to said sense-write conductor during a read or write operation and isolating said data terminal from said sense-write conductor at times other than during a read or write operation.
Claim 13
Independent Claim
78 words
A method of operating a semiconductor memory including a plurality of storage cells coupled to a sense-write conductor coupled to a sense amplifier comprising selectively coupling data between said sense-write conductor and a data terminal of said semiconductor memory through a selection transistor of a dummy storage cell connected to said sense-write conductor during a read or write operation and isolating said data terminal from said sense-write conductor at times other than during a read or write operation.
Claim 14
Dependent Claim
127 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to a plurality of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled to said first storage node for selectively coupling said input-output circuit means to said first storage node during a portion of a read operation or a write operation and for isolating said input-output circuit means from said first storage node at times other than during said portions of a read operation or a write operation.
Claim 15
Dependent Claim
127 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to a plurality of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled to said first storage node for selectively coupling said input-output circuit means to said first storage node during a portion of a read operation or a write operation and for isolating said input-output circuit means from said first storage node at times other than during said portions of a read operation or a write operation.
Claim 16
Dependent Claim
129 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to a plurality of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled between first storage node and a data terminal of said semiconductor memory for selectively transferring data between said data terminal and said first sense-write conductor during a portion of a read operation or a write operation and isolating said data terminal from said first sense-write conductor during other portions of said read operation or said write operation.
Claim 17
Dependent Claim
129 words
A semiconductor memory having a plurality of storage cells, first and second sense-write conductors coupled, respectively, to a plurality of said storage cells, a sense amplifier circuit coupled between said first and second sense-write conductors, first and second dummy storage cells coupled, respectively, to said first and second sense-write conductors, said first and second dummy storage cells having first and second storage nodes, respectively, said semiconductor memory comprising input-output circuit means coupled between first storage node and a data terminal of said semiconductor memory for selectively transferring data between said data terminal and said first sense-write conductor during a portion of a read operation or a write operation and isolating said data terminal from said first sense-write conductor during other portions of said read operation or said write operation.
Claim 18
Dependent Claim
52 words
The MOS semiconductor random access memory as recited in claim 11 wherein said column decode means includes a first column decoder circuit coupled to all of said column selection conductors of said first array and a second column decode circuit coupled to all of said column selection conductors of said second array.
References Cited (Backward Citations)
US3838295A
Cited
US3936810A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-18 | 1980-07-19 | 1981-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-18 | 1984-07-19 | 1985-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-18 | 1988-07-19 | 1989-01-18 | $7700.00 | Window Closed / Lapsed |