US4001607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Drive circuit for a gate semiconductor device
Assignee: RCA Licensing Corp
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Filing: 1975-06-09
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Granted: 1977-01-04
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Expires: 1995-06-09
Abstract
Abstract A drive circuit for a gated semiconductor device includes a switching device which provides first and second conduction states. The switching device is coupled to a source of direct current potential by means of a first inductor and coupled to the gate of the gated semiconductor device by means of a capacitor. A second inductor is coupled to the gate of the gated semiconductor device. Negative current is produced in the gate of the gated semiconductor device and energy is stored in first and second inductors during the first conduction state of the switching device. Positive current is produced in the gate of the gated semiconductor device during the second conduction state. The first and second inductors provide for enhancement of the positive gate current and also charging of the capacitor during the second conduction state.
Inventors
- 👤 Wolfgang Friedrich Wilhelm Dietz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:02
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/04; H03K17/0403; H03K17/51; H03K17/56; H03K17/72; H03K17/73; H03K4/00; H03K4/06; H03K4/08; H03K4/83
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
186 words
A drive circuit for a gated semiconductor device, comprising: a source of direct current potential; switching means for providing first and second conduction states; a gated semiconductor device; first capacitance means coupled to said switching means and a gate electrode of said gated semiconductor device for providing a first gate current in response to said first conduction state; a first inductance means coupled to said source of direct current potential and said switching means for storing energy during said first conduction state to be utilized to enhance a second gate current and the replenishment of energy in said first capacitance means during said second conduction state; means including a second inductance coupled to said gate electrode and reference potential for storing energy during said first conduction state to be utilized to further enhance said second gate current during said second conduction state; and second capacitance means coupled to said second inductance and to reference potential and forming a resonant circuit with said second inductance and said first capacitance means for commutating said switching means to switch from said first conduction state to said second conduction state.
Claim 2
Dependent Claim
186 words
A drive circuit for a gated semiconductor device, comprising: a source of direct current potential; switching means for providing first and second conduction states; a gated semiconductor device; first capacitance means coupled to said switching means and a gate electrode of said gated semiconductor device for providing a first gate current in response to said first conduction state; a first inductance means coupled to said source of direct current potential and said switching means for storing energy during said first conduction state to be utilized to enhance a second gate current and the replenishment of energy in said first capacitance means during said second conduction state; means including a second inductance coupled to said gate electrode and reference potential for storing energy during said first conduction state to be utilized to further enhance said second gate current during said second conduction state; and second capacitance means coupled to said second inductance and to reference potential and forming a resonant circuit with said second inductance and said first capacitance means for commutating said switching means to switch from said first conduction state to said second conduction state.
Claim 3
Dependent Claim
22 words
A drive circuit for a gated semiconductor according to claim 1 wherein said gated semiconductor device is a gate-turn-off silicon controlled rectifier.
Claim 4
Dependent Claim
38 words
A drive circuit for a gated semiconductor according to claim 2 wherein said means including a second inductance further includes a resistor, said resistor being appropriately sized to optimize said second gate current during said second conduction state.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-04 | 1980-07-05 | 1981-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-04 | 1984-07-05 | 1985-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-04 | 1988-07-05 | 1989-01-04 | $7700.00 | Window Closed / Lapsed |