US3998675A
Expired / Lapsed
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Method of doping a semiconductor body
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1975-11-11
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Granted: 1976-12-21
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Expires: 1995-11-11
Abstract
Abstract A method of doping a semiconductor body comprises applying to a surface of the semiconductor body a layer through which the doping material can diffuse and provide the layer with a reducing agent to reduce the doping material to its elemental form at areas where doping is not required.
Inventors
- 👤 Werner Langheinrich
- 👤 Max Kuisl
- 👤 Anton Sturmer
- 👤 Friedrich Lammel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:21
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
94 words
A method of doping a semiconductor body by diffusion from the gaseous phase in which centres of impurity are diffused into a limited region of one side of the surface of a semiconductor body, characterized by coating the surface over its entire area with a layer through which the doping material is capable of diffusing; and providing this layer with a reducing agent at those points at which doping is not desired in the semiconductor body, said reducing agent reducing the doping material, from its form in the gaseous atmosphere to the elemental form.
Claim 2
Independent Claim
94 words
A method of doping a semiconductor body by diffusion from the gaseous phase in which centres of impurity are diffused into a limited region of one side of the surface of a semiconductor body, characterized by coating the surface over its entire area with a layer through which the doping material is capable of diffusing; and providing this layer with a reducing agent at those points at which doping is not desired in the semiconductor body, said reducing agent reducing the doping material, from its form in the gaseous atmosphere to the elemental form.
Claim 3
Dependent Claim
21 words
A method as defined in claim 1, wherein said reducing agent is contained in said layer located on said semiconductor body.
Claim 4
Dependent Claim
21 words
A method as defined in claim 1, wherein said reducing agent is applied to said layer located on said semiconductor body.
Claim 5
Dependent Claim
22 words
A method as defined in claim 1, wherein the layer applied to the semiconductor body consists of an oxide or a nitride.
Claim 6
Dependent Claim
16 words
A method as defined in claim 1, wherein a metal is used as a reducing agent.
Claim 7
Dependent Claim
16 words
A method as defined in claim 1, wherein a semiconductor is used as a reducing agent.
Claim 8
Dependent Claim
29 words
A method as defined in claim 1, wherein the reducing agent is applied over the entire area of the layer located on the semiconductor body and is subsequently structured.
Claim 9
Dependent Claim
22 words
A method as defined in claim 1, and comprising diffusing the centres of impurity into said semiconductor body in an oxidising atmosphere.
Claim 10
Dependent Claim
15 words
A method as defined in claim 1, wherein boron is used as a doping material.
Claim 11
Dependent Claim
15 words
A method as defined in claim 1, wherein phosphorus is used as a doping material.
Claim 12
Independent Claim
78 words
A method of doping a semiconductor body comprising the steps of coating a surface of said semiconductor body over its entire area with a layer through which doping material can diffuse, providing said layer with a reducing agent at those parts of said surface of said semiconductor at which doping is not required for reducing the doping material to its elemental form and applying a gaseous phase of the doping material to said surface of said semiconductor body.
Claim 13
Independent Claim
78 words
A method of doping a semiconductor body comprising the steps of coating a surface of said semiconductor body over its entire area with a layer through which doping material can diffuse, providing said layer with a reducing agent at those parts of said surface of said semiconductor at which doping is not required for reducing the doping material to its elemental form and applying a gaseous phase of the doping material to said surface of said semiconductor body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-21 | 1980-06-21 | 1980-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-21 | 1984-06-21 | 1984-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-21 | 1988-06-21 | 1988-12-21 | $7700.00 | Window Closed / Lapsed |