US3996536A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal-insulator-semiconductor device phase shifter
Assignee: RCA Corp
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Filing: 1975-06-20
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Granted: 1976-12-07
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Expires: 1995-06-20
Abstract
Abstract A microwave signal phase shifter using a metal-insulator-semiconductor (MIS) device is provided. In one preferred embodiment, one end of the device is coupled to a port of a circulator and the opposite end is coupled to ground. When the diode is switched from a first reverse bias state to a second forward bias state, the network switches from a first reactance to a second reactance and the reflection coefficient phase angle shifts.
Inventors
- 👤 Raymond Louis Camisa
- 👤 Benjamin Franklin Hitch
- 👤 Shui Yuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:28
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/10; H01P1/15; H01P1/18; H01P1/184
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
196 words
A phase shifter for microwave signals of high power level comprising: a metal-insulator-semiconductor device of uniform cross-section with the insulator layer spaced continuously between said metal and said semiconductor layer and having a pair of terminals and characterized by exhibiting a first substantially fixed value of capacitance when biased over a first relatively broad range of D.C. bias voltages in a first direction and by exhibiting a second substantially fixed value of capacitance when biased over a second relatively broad range of D.C. bias voltages in a second reverse direction; first coupling means coupling the first terminal of said pair to a point of reference, reflecting potential; second coupling means for coupling said microwave signals to the second terminal of said device and for coupling the signals reflected from said device at said second terminal to an output means; and means for biasing said device initially by a D.C. voltage within said first range in said first direction and then by a D.C. voltage within said second range in said second reverse direction, whereby the reflection coefficient phase angle shifts substantially a given amount providing a substantially given amount of phase shift of said microwave signals.
Claim 2
Dependent Claim
196 words
A phase shifter for microwave signals of high power level comprising: a metal-insulator-semiconductor device of uniform cross-section with the insulator layer spaced continuously between said metal and said semiconductor layer and having a pair of terminals and characterized by exhibiting a first substantially fixed value of capacitance when biased over a first relatively broad range of D.C. bias voltages in a first direction and by exhibiting a second substantially fixed value of capacitance when biased over a second relatively broad range of D.C. bias voltages in a second reverse direction; first coupling means coupling the first terminal of said pair to a point of reference, reflecting potential; second coupling means for coupling said microwave signals to the second terminal of said device and for coupling the signals reflected from said device at said second terminal to an output means; and means for biasing said device initially by a D.C. voltage within said first range in said first direction and then by a D.C. voltage within said second range in said second reverse direction, whereby the reflection coefficient phase angle shifts substantially a given amount providing a substantially given amount of phase shift of said microwave signals.
Claim 3
Dependent Claim
14 words
The combination claimed in claim 1 wherein said second coupling means includes a circulator.
Claim 4
Dependent Claim
14 words
The combination claimed in claim 1 wherein said second coupling means includes a hybrid.
Claim 5
Dependent Claim
18 words
The combination claimed in claim 1 including a second metal-insulator-semiconductor device in series with said first mentioned device.
Claim 6
Dependent Claim
241 words
A phase shifter for providing a phase shift of 180° to microwave signals of high power level comprising: a metal-insulator-semiconductor device of uniform cross-section with an insulator layer spaced continuously between said metal and said semiconductor layer and having a pair of terminals and characterized by exhibiting a first relatively fixed value of capacitance when biased at a first bias voltage within a first relatively broad range of D.C. bias voltages in a first direction and by exhibiting a second different value of capacitance when biased at a second reverse bias voltage within a second relatively broad range of D.C. bias voltages in a second reverse direction; first coupling means for coupling the first terminal of said pair to a point of reference, reflecting potential; second coupling means for coupling microwave signals to the second terminal of said device and for coupling the signals reflected from said devices to an output means, said second coupling means including a short section of microstrip transmission line of a given length connected in series with said device for, with said device, reflecting a short circuit to said output means when said device is at said first value of capacitance and means coupled in parallel with said device for, with said device, reflecting an open circuit to said output means when said device is at said second value of capacitance, and means adapted to selectively apply said first and second bias voltages to said device.
Claim 7
Dependent Claim
241 words
A phase shifter for providing a phase shift of 180° to microwave signals of high power level comprising: a metal-insulator-semiconductor device of uniform cross-section with an insulator layer spaced continuously between said metal and said semiconductor layer and having a pair of terminals and characterized by exhibiting a first relatively fixed value of capacitance when biased at a first bias voltage within a first relatively broad range of D.C. bias voltages in a first direction and by exhibiting a second different value of capacitance when biased at a second reverse bias voltage within a second relatively broad range of D.C. bias voltages in a second reverse direction; first coupling means for coupling the first terminal of said pair to a point of reference, reflecting potential; second coupling means for coupling microwave signals to the second terminal of said device and for coupling the signals reflected from said devices to an output means, said second coupling means including a short section of microstrip transmission line of a given length connected in series with said device for, with said device, reflecting a short circuit to said output means when said device is at said first value of capacitance and means coupled in parallel with said device for, with said device, reflecting an open circuit to said output means when said device is at said second value of capacitance, and means adapted to selectively apply said first and second bias voltages to said device.
Claim 8
Dependent Claim
19 words
The combination claimed in claim 5 wherein said means coupled in parallel with said metal-insulator-semiconductor device includes an inductor.
Claim 9
Dependent Claim
34 words
The combination claimed in claim 5 including a second metal-insulator-semiconductor device in series with said first mentioned device and wherein said devices are inductively packaged and said means coupled in parallel includes a capacitance.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-07 | 1980-06-07 | 1980-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-07 | 1984-06-07 | 1984-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-07 | 1988-06-07 | 1988-12-07 | $7700.00 | Window Closed / Lapsed |