Abstract Metal plates of tungsten or molybdenum, having an optimum thickness of 1000 micrometers or less, are bonded to respective cathode and anode electrical coatings on the opposed major surfaces of a semiconductor wafer. The metal plates in turn are conductively bonded to the heat pipe walls which are used as the electrical connectors between the anode and cathode coatings and the external working circuit. Heat that is developed by the surge current flowing through the wafer during the first 6 milliseconds, is dissipated into the plates that are bonded to the opposed major surfaces of the wafer, before the cooling capability of the heat pipes is effective. This provides a greater surge current capability for the semiconductor wafer.
A semiconductor device comprising a semiconductor wafer having at least one major surface, a heat pipe including an hermetically closed envelope, said envelope comprising a metal wall portion substantially conforming with and fixed to said major surface, said wall portion having a coeffcient of thermal expansion conforming closely with the material of said wafer and being tightly bonded to said wafer surface with a solid bond making a good thermal contact to said wafer surface providing good thermal conductivity between said wafer and said heat pipe, said wall portion having uniform thickness between 500 to 1,000 micrometers inclusive.
Claim 2
Dependent Claim
98 words
A semiconductor device comprising a semiconductor wafer having at least one major surface, a heat pipe including an hermetically closed envelope, said envelope comprising a metal wall portion substantially conforming with and fixed to said major surface, said wall portion having a coeffcient of thermal expansion conforming closely with the material of said wafer and being tightly bonded to said wafer surface with a solid bond making a good thermal contact to said wafer surface providing good thermal conductivity between said wafer and said heat pipe, said wall portion having uniform thickness between 500 to 1,000 micrometers inclusive.
Claim 3
Dependent Claim
29 words
A semiconductor device in accordance with claim 1, wherein said conforming wall portion of said heat pipe is formed of one of the metals molybdenum, tungsten, copper or silver.
Claim 4
Dependent Claim
88 words
A semiconductor device in accordance with claim 1, wherein said semiconductor wafer has two opposed major surfaces and said heat pipe is one of two heat pipes, the other one of said heat pipes comprising another hermetically closed envelope having a metal wall portion conforming to and fixed to the major surface of said wafer opposed to said one major surface with a solid bond making a good thermal contact with said opposed major surface, said conforming wall portions having a uniform thickness of less than 1000 micrometers.