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US3984782A Expired / Lapsed US ⏱️ 0.0 years remaining

Bias control circuit for an audio amplifier utilizing an unsaturated junction type FET

Assignee: Sansui Electric Co Ltd
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Filing: 1975-12-22
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Granted: 1976-10-05
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Expires: 1995-12-22
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Abstract

Abstract A power amplifier stage for an audio amplifier is constituted by a complementary pair of one N channel and one P channel unsaturated function FETs forming a single ended pushpull circuit. The stage is energized by a first d.c. power source. The gate potentials of the FETs are controlled by a series of control type constant voltage source comprising a pair of complementary series connected control transistors energized by a second d.c. power source which varies at the same rate as the first d.c. power source. A comparison circuit including a second pair of complementary transistors is connected to a d.c. reference voltage which varies to a smaller level than the first and second d.c. power sources in order to provide a constant quiescent current flowing in the drain circuits of the FETs even if the first and second d.c. voltage levels fluctuate.

Inventors

  • 👤 Shuji Shizuhara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 14:02
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/30; H03F3/3001; H03F3/3044; H03F1/00; H03F1/30; H03F1/307

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 483 words
A bias control circuit for an audio amplifier utilizing an unsaturated junction type FET, the improvement wherein said amplifier includes at least a power amplifier circuit comprising a complementary pair of one N channel and one P channel FETs forming a single ended pushpull circuit, the N channel FET having a drain connected to the positive terminal of a first dc power source of a predetermined voltage and a source connected via a load to a ground potential, and the P channel FET having a drain connected to the negative terminal of the first dc power source and a source connected via the load to the ground potential; and wherein said bias control circuit comprises a series control type constant voltage source constructed of a first complementary pair of one PNP type and one NPN type control transistors, the PNP type control transitor having a collector-emitter path connected between the negative terminal of a second dc power source with its voltage predetermined and varied at subtantially the same rate as that of the first dc power source and the gate of the N channel FET included in said power amplifier circuit and coupled via the gate bias circuit thereof to one terminal of an input audio signal source with the other terminal connected to the ground potential, and the NPN type control transistor having a collector-emitter path connected between the postive terminal of the second dc power source and the gate of the P channel FET included in said power amplifier circuit and coupled via the gate bias circuit thereof to the nongrounded side terminal of the input audio signal source; of a second complementary pair of one PNP type and one NPN type comparison transistors, the PNP type comparison transistor having a base coupled to the base bias circuit thereof forming a first comparator and a collector via a first detection resistor to the negative terminal of the second dc power source coupled with the collector of the PNP type control transistor and connected also to the base thereof, and the NPN comparison transistor having a base coupled to the base bias circuit thereof forming a second comparator and a collector connected via a second detection resistor of substantially the same resistance value as the first detection resistor to the postive terminal of the second dc power source coupled with the collector of the NPN type control transistor and connected also to the base thereof; and of a reference voltage source disposed to induce a reference dc voltage varied at a smaller voltage level than those of the first and second dc power sources in a current conduction path between the positive terminal of the second dc power source and the ground potential and including a series circuit of a voltage regulator element and a third resistor with its nongrounded side terminal connected to the emitter of the NPN type comparison transistor.
Claim 2
Dependent Claim 483 words
A bias control circuit for an audio amplifier utilizing an unsaturated junction type FET, the improvement wherein said amplifier includes at least a power amplifier circuit comprising a complementary pair of one N channel and one P channel FETs forming a single ended pushpull circuit, the N channel FET having a drain connected to the positive terminal of a first dc power source of a predetermined voltage and a source connected via a load to a ground potential, and the P channel FET having a drain connected to the negative terminal of the first dc power source and a source connected via the load to the ground potential; and wherein said bias control circuit comprises a series control type constant voltage source constructed of a first complementary pair of one PNP type and one NPN type control transistors, the PNP type control transitor having a collector-emitter path connected between the negative terminal of a second dc power source with its voltage predetermined and varied at subtantially the same rate as that of the first dc power source and the gate of the N channel FET included in said power amplifier circuit and coupled via the gate bias circuit thereof to one terminal of an input audio signal source with the other terminal connected to the ground potential, and the NPN type control transistor having a collector-emitter path connected between the postive terminal of the second dc power source and the gate of the P channel FET included in said power amplifier circuit and coupled via the gate bias circuit thereof to the nongrounded side terminal of the input audio signal source; of a second complementary pair of one PNP type and one NPN type comparison transistors, the PNP type comparison transistor having a base coupled to the base bias circuit thereof forming a first comparator and a collector via a first detection resistor to the negative terminal of the second dc power source coupled with the collector of the PNP type control transistor and connected also to the base thereof, and the NPN comparison transistor having a base coupled to the base bias circuit thereof forming a second comparator and a collector connected via a second detection resistor of substantially the same resistance value as the first detection resistor to the postive terminal of the second dc power source coupled with the collector of the NPN type control transistor and connected also to the base thereof; and of a reference voltage source disposed to induce a reference dc voltage varied at a smaller voltage level than those of the first and second dc power sources in a current conduction path between the positive terminal of the second dc power source and the ground potential and including a series circuit of a voltage regulator element and a third resistor with its nongrounded side terminal connected to the emitter of the NPN type comparison transistor.
Claim 3
Dependent Claim 73 words
The bias control circuit claimed in claim 1, wherein the voltage regulator element included in said reference voltage source comprises a zener diode having an anode connected to one nongrounded side terminal of the third resistor with the other terminal connected to the ground potential and a cathode connected to the emitter of the NPN type comparison transistor and also to the positive terminal of the second dc power source via a resistor.
Claim 4
Dependent Claim 113 words
The bias control circuit claimed in claim 1, wherein the voltage regulator element included in said reference voltage source comprises a saturated junction type FET having a gate connected to the slidable arm of a variable resistor one end of which is connected via a fourth resistor to the positive terminal of the second dc power source and the other end of which is connected via a fifth resistor to the negative terminal of the second dc power source, a drain connected to the emitter of the NPN type comparison transistor, and a source connected to one nongrounded side terminal of the third resistor with the other terminal connected to the ground potential.
Claim 5
Dependent Claim 252 words
The bias control circuit claimed in claim 1, wherein the gate bias circuits of the complementary pair of FET's jointly constituting said power amplifier circuit comprise a driver circuit including a third complementary pair of one NPN type and one PNP type driver transistors jointly forming a single ended pushpull circuit, the third NPN type driver transistor having a collector connected to the positive terminal of the second dc power source, a base connected via a fourth resistor to that emitter of the first NPN type control transistor which forms one output terminal of said constant voltage source and also connected via a fifth resistor to one nongrounded side terminal of the input audio signal source with the other terminal connected to the ground potential, and an emitter connected via an emitter load resistance network to the negative terminal of the second dc power source, and the third PNP type driver transistor having a collector connected to the negative terminal of the second dc power source, a base connected via a sixth resistor of substantially the same resistance value as the fourth resistor to that emitter of the first PNP type control transistor which forms the other output terminal of said constant voltage source and also connected via a seventh resistor of substantially the same resistance value of the fifth resistor to the nongrounded side terminal of the input audio signal source, and an emitter connected via another emitter load resistance network to the positive terminal of the second dc power source.
Claim 6
Dependent Claim 209 words
The bias control circuit claimed in claim 4, wherein the emitter load resistance networks of the third complementary pair of driver transistors comprise a constant current source including a fourth complementary pair of one NPN type-and one PNP type-bipolar transistors, the fourth NPN type bipolar transistor having an emitter connected via an eighth resistor to the negative terminal of the second dc power source, a base coupled to a constant base bias source disposed between the negative terminal of the second dc power source and the ground potential, and a collector connected to that emitter of the third NPN type driver transistor which is connected to the gate of the P channel FET included in said power amplifier circuit, and the fourth PNP type bipolar transistor having an emitter connected via a ninth resistor of substantially the same resistance value as the eighth resistor to the positive terminal of the second dc power source, a base coupled to another constant base bias source disposed between the positive terminal of the second dc power source and the ground potential, and a collector connected to that emitter of the third PNP type driver transistor which is connected to the gate of the N channel FET included in said power amplifier circuit.
Claim 7
Dependent Claim 105 words
The bias control circuit claimed in claim 4, wherein the emitter load resistance networks of the third complementary pair of driver transistors comprise an eighth resistor having one end connected to the negative terminal of the second dc power source, and the other end connected to the gate of the P channel FET included in said power amplifier circuit; and a ninth resistor having substantially the same resistance value as the eighth resistor, one end connected to the positive terminal of the second dc power source, and the other end connected to the gate of the N channel FET included in said power amplifier circuit.
Claim 8
Dependent Claim 29 words
The bias control circuit claimed in claim 4, wherein the emitter load resistance networks of the third complementary pair of driver transistors comprise a single resistor interconnecting their emitters.

References Cited (Backward Citations)

US3921089A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-10-05 1980-04-05 1980-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-10-05 1984-04-05 1984-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-10-05 1988-04-05 1988-10-05 $7700.00 Window Closed / Lapsed

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