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US3984280A Expired / Lapsed US ⏱️ 0.0 years remaining

Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns

Assignee: US Philips Corp
•
Filing: 1975-08-11
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Granted: 1976-10-05
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Expires: 1995-08-11
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Abstract

Abstract Rod shaped monocrystals are formed by causing monocrystalline deposition to take place in that body from a melt formed by heating a longitudinal section of that body with individual trough shaped heating elements.

Inventors

  • 👤 Jean-Pierre Besselere
  • 👤 Bernard Lambert

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 20:19
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/003

Claims Analysis

Total Claims: 20
Claim 1
Independent Claim 211 words
In a method of manufacturing rod-shaped single crystals from a starting material in the form of an elongate body positioned approximately horizontally by monocrystalline deposition in the longitudinal direction of said body from a melt formed at least in a longitudinal part of said body, the improvement which comprises forming said melt by heating said body with individually energizable heating elements at least one of which heating elements is not in contact with said body and has a transversally asymmetric position relative to said body, said transversally asymmetrically positioned heating element being trough-shaped thereby to allow for the heating of the lower side and upright sides of at least a longitudinal section of said body, said transversally asymmetric heating element comprising a substantially trough-shaped resistance heater having half turns extending transversally to the longitudinal direction of said body and the thermal energy, radiated by said element, being divided transversally in a substantially homogeneous manner over the inner side of the trough-shaped heating element and including a screen of a refractory material between the trough-shaped heating element and the bottom and sides of the body, said screen being out of contact with said body and any container for said body and being in a fixed position in regard to said heating element.
Claim 2
Dependent Claim 211 words
In a method of manufacturing rod-shaped single crystals from a starting material in the form of an elongate body positioned approximately horizontally by monocrystalline deposition in the longitudinal direction of said body from a melt formed at least in a longitudinal part of said body, the improvement which comprises forming said melt by heating said body with individually energizable heating elements at least one of which heating elements is not in contact with said body and has a transversally asymmetric position relative to said body, said transversally asymmetrically positioned heating element being trough-shaped thereby to allow for the heating of the lower side and upright sides of at least a longitudinal section of said body, said transversally asymmetric heating element comprising a substantially trough-shaped resistance heater having half turns extending transversally to the longitudinal direction of said body and the thermal energy, radiated by said element, being divided transversally in a substantially homogeneous manner over the inner side of the trough-shaped heating element and including a screen of a refractory material between the trough-shaped heating element and the bottom and sides of the body, said screen being out of contact with said body and any container for said body and being in a fixed position in regard to said heating element.
Claim 3
Dependent Claim 15 words
A method as claimed in claim 1 wherein the half turns are arranged in series.
Claim 4
Dependent Claim 23 words
A method as claimed in claim 1 wherein a further heating element is arranged above at least a longitudinal part of the body.
Claim 5
Dependent Claim 40 words
A method as claimed in claim 3 wherein the trough-shaped heating element heats the material of the body or the longitudinal part of the body which is melted, to a higher temperature than the heating element present above the melt.
Claim 6
Dependent Claim 31 words
A method as claimed in claim 4, wherein the heating element present above the material has an elongate shape, its longitudinal direction coinciding approximately with the longitudinal direction of the body.
Claim 7
Dependent Claim 37 words
A method as claimed in claim 5 wherein, viewed from the melt, the heating element present above the material projects beyond the trough-shaped heating element in the longitudinal direction towards the side of the growing single crystal.
Claim 8
Dependent Claim 28 words
A method as claimed in claim 1 wherein a series of trough-shaped heating elements is used which are juxtaposed in the longitudinal direction and can be energized individually.
Claim 9
Dependent Claim 33 words
A method as claimed in claim 7 wherein one heating element for the heating of the upperside of the melt is used substantially throughout the length of the series of trough-shaped heating elements.
Claim 10
Dependent Claim 29 words
A method as claimed in claim 8 wherein the movement of the solidification front during the crystallization is produced by controlling the energization of the individual trough-shaped heating elements.
Claim 11
Dependent Claim 23 words
A method as claimed in claim 1 wherein a molten zone is moved through the elongate body by means of the heating elements.
Claim 12
Dependent Claim 26 words
A method as claimed in claim 1 wherein the starting material is melted substantially throughout its length after which cooling is carried out from one end.
Claim 13
Dependent Claim 29 words
A method as claimed in claim 1 wherein a seed crystal is provided at one end of the elongate body, the solidification front being moved from said seed crystal.
Claim 14
Dependent Claim 17 words
A method as claimed in claim 1 wherein a single crystal of a semiconductor material is formed.
Claim 15
Dependent Claim 20 words
A method as claimed in claim 13 wherein a single crystal of a compound of the III-V type is formed.
Claim 16
Dependent Claim 15 words
A method as claimed in claim 14 wherein in that the III-V compound contains arsenic.
Claim 17
Dependent Claim 14 words
A method as claimed in claim 15 wherein the III-V compound is gallium arsenide.
Claim 18
Dependent Claim 25 words
A method as claimed in claim 1 wherein the starting material comprises at least one of the components of the single crystal to be manufactured.
Claim 19
Dependent Claim 27 words
A method as claimed in claim 17 wherein at least one of the components of the single crystal to be manufactured is supplied from the gaseous phase.
Claim 20
Dependent Claim 24 words
A method as claimed in claim 17 wherein the starting material consists at least mainly of the material of the crystal to be formed.

References Cited (Backward Citations)

US2719799A Cited
US2773923A Cited
US2902350A Cited
US2966537A Cited
US2967095A Cited
US3190732A Cited
US3335035A Cited
US3359077A Cited
US3296036A Cited
FR2116664A6 Cited
GB1383400A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-10-05 1980-04-05 1980-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-10-05 1984-04-05 1984-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-10-05 1988-04-05 1988-10-05 $7700.00 Window Closed / Lapsed

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