Method of making a substrate striped planar laser

Claim 1

A method of making a diode laser having a p-n junction for the injection of minority carriers comprising the steps of:

Claim 2

A method of making a diode laser having a p-n junction for the injection of minority carriers comprising the steps of:

Claim 6

A method of making a heterojunction diode laser having a p-n junction for the injection of minority carriers, comprising the steps of: forming in a surface of a substrate of semiconductor material of a first conductivity type adjacent surface regions that define a channel therebetween said channel being formed by masking an area of said surface of said substrate with a material impervious to diffusion therethrough of an impurity of the other conductivity type, diffusing said selected impurity into surface regions of said substrate not protected by said material, and removing said material to provide spaced p-n junctions with said channel therebetween, said channel having a width of about 10 microns. growing upon said substrate surface a first layer of a first semiconductor material of said first conductivity type, growing upon said first layer a second layer of a second semiconductor material of either said first conductivity type or of the other conductivity type to provide a second p-n junction, when said second layer is of said other conductivity type growing upon said second layer a third layer of said first semiconductor material, said third layer being of a conductivity type other of said first layer, to provide said second p-n junction when said second layer is of the first conductivity type, and providing electrodes for said laser such that when said p-n junction is forward biased the flow of pump current in said substrate is through said channel with the result that the flow of pump current is confined to a small region of said first layer and minority carriers are injected across said second p-n junction into only a small region of said second layer.

Claim 7

A method of making a heterojunction diode laser having a p-n junction for the injection of minority carriers, comprising the steps of: forming in a surface of a substrate of semiconductor material of a first conductivity type adjacent surface regions that define a channel therebetween said channel being formed by masking an area of said surface of said substrate with a material impervious to diffusion therethrough of an impurity of the other conductivity type, diffusing said selected impurity into surface regions of said substrate not protected by said material, and removing said material to provide spaced p-n junctions with said channel therebetween, said channel having a width of about 10 microns. growing upon said substrate surface a first layer of a first semiconductor material of said first conductivity type, growing upon said first layer a second layer of a second semiconductor material of either said first conductivity type or of the other conductivity type to provide a second p-n junction, when said second layer is of said other conductivity type growing upon said second layer a third layer of said first semiconductor material, said third layer being of a conductivity type other of said first layer, to provide said second p-n junction when said second layer is of the first conductivity type, and providing electrodes for said laser such that when said p-n junction is forward biased the flow of pump current in said substrate is through said channel with the result that the flow of pump current is confined to a small region of said first layer and minority carriers are injected across said second p-n junction into only a small region of said second layer.

Claim 8

A method of making a diode laser comprising the steps of: forming a pump current confining channel in a layer of semiconductor material, said channel having a width of about 10 microns and subsequently providing a p-n junction between layers of semiconductor material such that pump current flowing through said channel results in the injection of minority carriers across said p-n junction with the resulting production of coherent light.

Claim 9

A method of making a diode laser comprising the steps of: forming a pump current confining channel in a layer of semiconductor material, said channel having a width of about 10 microns and subsequently providing a p-n junction between layers of semiconductor material such that pump current flowing through said channel results in the injection of minority carriers across said p-n junction with the resulting production of coherent light.

Claim 10

A method of making a diode laser having a p-n junction for the injection of minority carriers comprising the steps of: forming in a surface of a substrate of semiconductor material of a first conductivity type adjacent surface regions of material that define a channel therebetween, growing upon said substrate surface having said adjacent surface regions a first layer of semiconductor material of said first conductivity type, growing upon said first layer of semiconductor material a second layer of semiconductor material of the other conductivity type to thereby provide said p-n junction between said first and second layers, said second layer having a thickness of about 0.3 microns, and providing means for forward biasing said p-n junction such that pumping current flows through said channel to provide the injection of minority carriers across said p-n junction to thereby provide coherent light.

Claim 11

A method of making a diode laser having a p-n junction for the injection of minority carriers comprising the steps of: forming in a surface of a substrate of semiconductor material of a first conductivity type adjacent surface regions of material that define a channel therebetween, growing upon said substrate surface having said adjacent surface regions a first layer of semiconductor material of said first conductivity type, growing upon said first layer of semiconductor material a second layer of semiconductor material of the other conductivity type to thereby provide said p-n junction between said first and second layers, said second layer having a thickness of about 0.3 microns, and providing means for forward biasing said p-n junction such that pumping current flows through said channel to provide the injection of minority carriers across said p-n junction to thereby provide coherent light.