Channel selector

Claim 2

In a channel selector having a tuning circuit employing a variable reactance element, memorization means comprising: first means for producing first coded signals representing channel numbers corresponding to said channels respectively, second means for producing second coded signals representing voltages respectively corresponding to said first coded signals, said second coded signals being coupled to the reactance element of said tuning circuit for tuning said circuit to a selected channel, and means for including a non-volatile memory for permanently storing therein both first and second coded signals; and channel selection means comprising: read-out means coupled to said non-volatile memory for reading out from said memory a desired second coded signal in response to the selected first coded signal, and means for converting the read-out second coded signal into said corresponding voltages for application thereof to said reactance element, said channel selector memorizing electrical signals corresponding to tuning channels in said non-volatile memory, channel selection thereafter being effected by tuning said tuning circuit to a desired one of said channels by reading out said memorized signals.

Claim 3

A channel selector according to claim 1, wherein said non-volatile memory comprises a closed loop consisting of serial memory bit domains for sequentially storing therein said first and second coded signals, said selector further comprising means for circulating the stored signals bit-by-bit with respect to said read-out means.

Claim 4

A channel selector according to claim 1, which further comprises a volatile auxiliary memory for temporarily storing therein said signals, said auxiliary memory permitting said signals to be correctly stored at locations within said non-volatile memory.

Claim 5

A channel selector according to claim 3, wherein said non-volatile memory comprises a magnetic bubble memory.

Claim 6

A channel selector according to claim 1, wherein said non-volatile memory comprises a magnetic bubble memory.

Claim 7

In a channel selector having a tuning circuit employing a variable reactance element, memorization means comprising: first means for producing selected channel instruction signals respectively corresponding to numbers designating desired channels; second means for producing coded signals representing voltages respectively corresponding to said channels, said coded signals being coupled to the reactance element of said tuning circuit for tuning said circuit to a selected channel; and means including a non-volatile memory for permanently storing therein said coded signals together with the corresponding instruction signals; and channel selection means comprising: read-out means coupled to said non-volatile memory for reading out the stored signals therefrom; means, including conversion means for converting the read-out coded signals in the corresponding voltages, for coupling said second read-out means to said reactance element; and means responsive to the read-out selecting channel instruction signals for effecting conversion of the read-out coded signals only with respect to the numbers designating said desired channels and preventing said conversion with respect to the numbers designated the remainder of said channels.

Claim 8

In a channel selector having a tuning circuit employing a variable reactance element, memorization means comprising: first means for producing selected channel instruction signals respectively corresponding to numbers designating desired channels; second means for producing coded signals representing voltages respectively corresponding to said channels, said coded signals being coupled to the reactance element of said tuning circuit for tuning said circuit to a selected channel; and means including a non-volatile memory for permanently storing therein said coded signals together with the corresponding instruction signals; and channel selection means comprising: read-out means coupled to said non-volatile memory for reading out the stored signals therefrom; means, including conversion means for converting the read-out coded signals in the corresponding voltages, for coupling said second read-out means to said reactance element; and means responsive to the read-out selecting channel instruction signals for effecting conversion of the read-out coded signals only with respect to the numbers designating said desired channels and preventing said conversion with respect to the numbers designated the remainder of said channels.

Claim 9

A channel selector according to claim 6, wherein said non-volatile memory defines a closed loop of serial memory bit domains for sequentially storing therein said instruction signals and coded signals per channel; said channel selector further comprising means for circulating the stored signals in said loop bit-by-bit with respect to said read-out means, said first means including means for producing said instruction signals in the form of bivalent signals which assume a first level to effect conversion of desired channels and assume a second level to prevent said conversion; and also comprising means for effecting circulation of stored signals by one channel of bits in response to the instruction signal of said second level.

Claim 10

A channel selector according to claim 7, wherein said non-volatile memory comprises a magnetic bubble memory.

Claim 11

A channel selector according to claim 7, which further comprises a volatile auxiliary memory for temporarily storing therein said signals, said auxiliary memory permitting said signals to be currently stored at locations within said non-volatile memory.

Claim 12

A channel selector according to claim 9, wherein said non-volatile memory comprises a magnetic bubble memory.