Method for cathodic sputtering including suppressing temperature rise

Claim 1

In the fabrication of semiconductor devices, the method of inhibiting the temperature rise of a semiconductor wafer comprised of an array of semiconductor devices during sputter etching of said wafer in an evacuated chamber, said semiconductor wafer having a pair of opposed major surfaces, the one of said surfaces to be etched having thereon films of inorganic dielectric material and at least one metal film, said films being susceptible to alteration at temperatures in excess of about 275°C, said chamber including, in a first portion, support means for said wafer and sputter etching means, the portions of said chamber remote from said first portion being at a lower temperature during sputter etching than said first portion, said method comprising the step of: mounting said wafer in said support means which contact from about one-tenth to about three percent of the area of one major face of said wafer, said major surface opposite the surface to be etched being free of any proximate conductive covering whereby heat is emitted from said wafer substantially entirely by radiation.