US3972838A
Expired / Lapsed
US
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Composition for diffusing phosphorus
Assignee: Denka Co Ltd
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Filing: 1975-05-13
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Granted: 1976-08-03
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Expires: 1995-05-13
Abstract
Abstract A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device.
Inventors
- 👤 Mitsuo Yamashita
- 👤 Akio Mikogami
- 👤 Masashi Hasegawa
- 👤 Hiroshi Oizumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:33
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/622; C04B35/64; C04B35/645; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10P32/19; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
46 words
A method for diffusing phosphorus wherein phosphorus diffusion is effected with a wafer comprising 30-95 percent by weight of phosphorus nitride and 70-5 percent by weight of silicon dioxide, in a stream of an inert gas saturated with water vapor having a temperature of 0°-30° C.
Claim 2
Independent Claim
46 words
A method for diffusing phosphorus wherein phosphorus diffusion is effected with a wafer comprising 30-95 percent by weight of phosphorus nitride and 70-5 percent by weight of silicon dioxide, in a stream of an inert gas saturated with water vapor having a temperature of 0°-30° C.
Claim 3
Independent Claim
50 words
A method for diffusing phosphorus wherein phosphorus diffusion is effected with a wafer comprising 30-95 percent by weight of phosphorus nitride and 70-5 percent by weight of silicon dioxide, in a stream of a gas mixture consisting of an inert gas and at least 0.1 percent by volume of oxygen.
Claim 4
Independent Claim
50 words
A method for diffusing phosphorus wherein phosphorus diffusion is effected with a wafer comprising 30-95 percent by weight of phosphorus nitride and 70-5 percent by weight of silicon dioxide, in a stream of a gas mixture consisting of an inert gas and at least 0.1 percent by volume of oxygen.
References Cited (Backward Citations)
US3849344A
Cited
US3806382A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-03 | 1980-02-02 | 1980-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-03 | 1984-02-02 | 1984-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-03 | 1988-02-02 | 1988-08-03 | $7700.00 | Window Closed / Lapsed |