Memory cell with decoupled supply voltage while writing

Claim 2

Memory means comprising, in combination: a supply voltage bus; first and second digit lines; a memory cell connected between said bus and a point of reference potential and exhibiting a high impedance between these points under static conditions, said cell including a low impedance path between the bus and a first node of the cell when in one state and a low impedance path between the bus and a second node of the cell when in its second state; first and second switches, the first between the first digit line and the first node and the second between the second digit line and the second node, the switches, when conducting, exhibiting a substantially higher impedance than the low impedance paths of the cell; a third normally closed switch connecting said bus to a terminal for a supply voltage; a fourth normally open switch connected between said bus and a point at the supply voltage level, said fourth switch, when conducting, exhibiting an impedance which is substantially higher than that of the first or second switches and substantially lower than said cell high impedance; and means for executing a write operation when one of said digit lines is placed at said reference potential and the other is placed at the supply voltage level comprising: means for opening said third switch; and means for closing said first, second and fourth switches.

Claim 3

The combination of claim 1 where said memory cell comprises first and second inverters, the output node of said first inverter connected to the input node of said second inverter forming said first node thereby and the output node of said second inverter connected to the input node of said first inverter forming said second node thereby.

Claim 4

The combination of claim 1 where said first and second switches comprise first and second MOS transistors, each having a gate electrode and a drain-source path, said drain-source path exhibiting said substantially higher impedance, the first transistor drain-source path connected between said first digit line an said first node and the second transistor drain-source path connected between said second digit line and said second node.

Claim 5

The combination of claim 3 where said third switch comprises a third MOS transistor having a gate electrode and a drain-source path, said drain-source path connected between said bus and said terminal.

Claim 6

The combination of claim 4 where said fourth switch comprises a fourth MOS transistor having a gate electrode and a drain-source path, said drain-source path connected between said bus and said point, said path exhibiting an impedance substantially higher than that of said first or second switches and substantially lower than said cell high impedance.

Claim 7

The combination of claim 5 where means for opening said third switch comprises a voltage applied to the gate electrode of said third MOS transistor thereby rendering said device nonconducting.

Claim 8

The combination of claim 5 where said means for closing said first, second and fourth switches comprises a voltage coupled to the respective gate electrodes of each of said first, second and fourth MOS transistors thereby rendering each transistor conducting.

Claim 9

Memory means having read and write modes comprising, in combination: a terminal for a voltage at a given level; a bus; switch means connected between said bus and said terminal for connecting said bus to said terminal during said read mode; a memory cell having first and second states connected between said bus and a point of reference potential, said cell, when in said first state, exhibiting a low impedance between said bus and a first node of the cell and when in said second state, exhibiting a high impedance between said bus and node; means for writing information into said cell thereby switching the cell from its first to its second state comprising means for connecting said first node through a first path having an impedance which is much higher than said low impedance and much lower than said high impedance to said point of reference potential and means for concurrently opening said switch means, whereby the voltage on said bus drops towards the reference potential level, said cell switching to said second state when the voltage on said bus reduces to a particular value; and means for automatically supplying a voltage having a given level to said bus after the cell has switched state comprising a path between said bus and a point at a given voltage level, said path having an impedance which is much higher than that of said first path and which is much lower than the impedance of said cell between said bus and said point of reference potential when said cell has assumed either said first or said second state.

Claim 10

Memory means having read and write modes comprising, in combination: a terminal for a voltage at a given level; a bus; switch means connected between said bus and said terminal for connecting said bus to said terminal during said read mode; a memory cell having first and second states connected between said bus and a point of reference potential, said cell, when in said first state, exhibiting a low impedance between said bus and a first node of the cell and when in said second state, exhibiting a high impedance between said bus and node; means for writing information into said cell thereby switching the cell from its first to its second state comprising means for connecting said first node through a first path having an impedance which is much higher than said low impedance and much lower than said high impedance to said point of reference potential and means for concurrently opening said switch means, whereby the voltage on said bus drops towards the reference potential level, said cell switching to said second state when the voltage on said bus reduces to a particular value; and means for automatically supplying a voltage having a given level to said bus after the cell has switched state comprising a path between said bus and a point at a given voltage level, said path having an impedance which is much higher than that of said first path and which is much lower than the impedance of said cell between said bus and said point of reference potential when said cell has assumed either said first or said second state.

Claim 11

The combination of claim 8 where said cell comprises: first and second CMOS transistors, each transistor having a drain-source path and a gate electrode, said drain-source paths serially connected between said bus and said point of reference potential, the node at the connection between said two paths comprising said first node of said cell, and said gate electrodes connected together; and third and fourth CMOS transistors, each transistor having a drain-source path and a gate electrode, said drain-source paths of said third and fourth transistors serially connected between said bus and said point of reference potential, the node at the connection of the paths of said third and fourth transistors comprising a second node of said cell, said second node connected to the gate electrodes of said first and second transistors and the gate electrodes of said third and fourth transistors connected together and to said first node.

Claim 12

The combination of claim 9 where said means for switching the cell comprises a fifth MOS transistor having a drain-source path and a gate electrode, said path coupled between said node and said point of reference potential whenever a voltage of suitable amplitude is applied to said gate electrode thereby rendering said transistor conductive.

Claim 13

The combination of claim 8 where said switch means comprises a MOS transistor having a drain-source path and a gate electrode, said path coupled between the bus and the terminal, and said means for opening said switch means comprising means for applying a voltage of sufficient amplitude to said gate electrode for rendering said transistor nonconducting.

Claim 14

The combination of claim 11 where said means for automatically supplying a voltage having a given level comprises an additional MOS transistor having a drain-source path and a gate electrode, said path coupled between said bus and a point at said given level, whereby said given level is applied to said bus whenever a turn on voltage is applied to said gate electrode.