US3968511A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with additional carrier injecting junction adjacent emitter region
Assignee: Sony Corp
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Filing: 1974-11-11
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Granted: 1976-07-06
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Expires: 1994-11-11
Abstract
Abstract A bipolar transistor has an emitter, a base, a collector and additional region which is electrically connected to the base region. The additional region is formed parallel to an emitter-base junction to inject minority carriers into the emitter and has a plurality of windows therein where a plurality of ohmic contacts for the emitter are located.
Inventors
- 👤 Hajime Yagi
- 👤 Tadaharu Tsuyuki
- 👤 Kotaro Koma
- 👤 Yoshihiro Miyazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:00
CPC Classifications
H; H10; H10D; H10D99/00; H10W; H10W72/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
130 words
A semiconductor device comprising: a. a first region of a first conductivity type; b. a second region of a second conductivity type interfaced with said first region; c. a third region of said first conductivity type and predetermined impurity concentration interfaced with said second region and remote from said first region; d. a fourth region of said second conductivity type remote from said second region and interfaced with said third region to form an additional junction therewith and having a plurality of windows therein; e. a distance between said fourth region and said second region being selected shorter than the diffusion length of minority carriers in said third region injected from said second region; and f. a plurality of ohmic contact portions formed in said windows of said fourth region.
Claim 2
Dependent Claim
130 words
A semiconductor device comprising: a. a first region of a first conductivity type; b. a second region of a second conductivity type interfaced with said first region; c. a third region of said first conductivity type and predetermined impurity concentration interfaced with said second region and remote from said first region; d. a fourth region of said second conductivity type remote from said second region and interfaced with said third region to form an additional junction therewith and having a plurality of windows therein; e. a distance between said fourth region and said second region being selected shorter than the diffusion length of minority carriers in said third region injected from said second region; and f. a plurality of ohmic contact portions formed in said windows of said fourth region.
Claim 3
Dependent Claim
28 words
A semiconductor device as claimed in claim 1, in which said fourth region is connected to said second region through a semiconductor region of said second conductivity type.
Claim 4
Dependent Claim
189 words
A semiconductor device comprising: a. a collector region of a first conductivity type; b. a base region of a second conductivity type interfaced with said collector region to form a collector P-N junction; c. an emitter region of said first conductivity type and low predetermined impurity concentration interfaced with said base region to form a base-emitter P-N junction spaced from said collector P-N junction by said base region; d. a carrier injection region of said second conductivity type interfaced with said emitter region to form an additional P-N junction spaced from said base-emitter P-N junction by portions of said emitter region therebetween having a thickness smaller than the diffusion length of minority carriers in said emitter region injected from said base region when said emitter P-N junction is forward biased, said carrier injection region having a plurality of windows therein; e. an ohmic contact region of first conductivity type and high predetermined impurity concentration formed in each of said windows; f. collector and base electrodes respectively connected to said collector region and base region; and g. an emitter electrode connected to and interconnecting each of said ohmic contact regions.
Claim 5
Dependent Claim
189 words
A semiconductor device comprising: a. a collector region of a first conductivity type; b. a base region of a second conductivity type interfaced with said collector region to form a collector P-N junction; c. an emitter region of said first conductivity type and low predetermined impurity concentration interfaced with said base region to form a base-emitter P-N junction spaced from said collector P-N junction by said base region; d. a carrier injection region of said second conductivity type interfaced with said emitter region to form an additional P-N junction spaced from said base-emitter P-N junction by portions of said emitter region therebetween having a thickness smaller than the diffusion length of minority carriers in said emitter region injected from said base region when said emitter P-N junction is forward biased, said carrier injection region having a plurality of windows therein; e. an ohmic contact region of first conductivity type and high predetermined impurity concentration formed in each of said windows; f. collector and base electrodes respectively connected to said collector region and base region; and g. an emitter electrode connected to and interconnecting each of said ohmic contact regions.
Claim 6
Dependent Claim
27 words
A semiconductor device of claim 3, in which said carrier injection region is connected to said base region through a semiconductor region of a second conductivity type.
Claim 7
Dependent Claim
20 words
A semiconductor device of claim 3, in which said emitter region has a thickness of about 5 to 7 microns.
References Cited (Backward Citations)
US3444443A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-06 | 1980-01-05 | 1980-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-06 | 1984-01-05 | 1984-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-06 | 1988-01-05 | 1988-07-06 | $7700.00 | Window Closed / Lapsed |