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US3968480A Expired / Lapsed US ⏱️ 0.0 years remaining

Memory cell

Assignee: Honeywell Inc
•
Filing: 1975-03-20
•
Granted: 1976-07-06
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Expires: 1995-03-20
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Abstract

Abstract A memory system has a data storage element connected by a first memory read device to a first memory output line and by a second memory read device to a second memory output line. A first and a second decoder are connected to the first and second memory read devices, respectively, to read-out data stored in the storage element in response to read address signals applied to the first and second decoders. A "write" operation is effected on the storage element by a write-in device connected between a data input line and the storage element and energized by a third decoder arranged to respond to a write address signal.

Inventors

  • 👤 Jeffrey P. Stein

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 11:05
CPC Classifications
G; G06; G06F; G06F9/00; G06F9/06; G06F9/30; G06F9/34; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4096; G11C11/41; G11C11/412; G11C8/00; G11C8/16

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 83 words
A memory system comprising: a data storage element, a first output terminal, a first readout means connecting said data storage element to said first output terminal, a second output terminal, a second readout means concurrently connecting said data storage element to said second output terminal, a first decoder means arranged to respond to a memory read operation to energize said first read out means, and, a second decoder arranged to respond to a memory read operation to concurrently energize said second readout means.
Claim 2
Dependent Claim 83 words
A memory system comprising: a data storage element, a first output terminal, a first readout means connecting said data storage element to said first output terminal, a second output terminal, a second readout means concurrently connecting said data storage element to said second output terminal, a first decoder means arranged to respond to a memory read operation to energize said first read out means, and, a second decoder arranged to respond to a memory read operation to concurrently energize said second readout means.
Claim 3
Dependent Claim 18 words
A memory system as set forth in claim 1 wherein said data storage element is a storage capacitor.
Claim 4
Dependent Claim 44 words
A memory system as set forth in claim 1 wherein said data storage element is a flip-flop and said first read-out means is connected to one side of said flip-flop and said second readout means is connected to their other side of said flip-flop.
Claim 5
Dependent Claim 48 words
A memory system as set forth in claim 1 and including a data input terminal, a data write means connecting said data input terminal to said data storage element, and a third decorder means arranged to respond to a memory write operation to energize said data write means.
Claim 6
Dependent Claim 17 words
A memory system as set forth in claim 4 wherein said data storage element is a capacitor.
Claim 7
Dependent Claim 45 words
A memory system as set forth in claim 4 wherein said data storage element is a flip-flop and said data write means is directly connected to one side of said flip-flop and is connected through a logical inverter to the other side of said flip-flop.
Claim 8
Dependent Claim 25 words
A memory system as set forth in claim 1 wherein said data storage element is formed as an integrated circuit element on a semiconductor chip.
Claim 9
Dependent Claim 25 words
A memory system as set forth in claim 2 wherein said data storage element is formed as an integrated circuit element on a semiconductor chip.
Claim 10
Dependent Claim 25 words
A memory system as set forth in claim 4 wherein said data storage element is formed as an integrated circuit element on a semiconductor chip.
Claim 11
Dependent Claim 25 words
A memory system as set forth in claim 5 wherein said data storage element is formed as an integrated circuit element on a semiconductor chip.

References Cited (Backward Citations)

US2066614A Cited
US3050673A Cited
US3191158A Cited
US3671946A Cited
US3668656A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-07-06 1980-01-05 1980-07-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-07-06 1984-01-05 1984-07-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-07-06 1988-01-05 1988-07-06 $7700.00 Window Closed / Lapsed

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