Injection laser with integral modulator

Claim 2

A semiconductor laser comprising: a first p-type semiconductor layer, a second n-type semiconductor layer adjacent said first layer, a third p-type semiconductor layer adjacent said second layer on the opposite side of said second layer from said first layer, means to apply an electric field across said three layers so that the junction between said first and second layers is reverse-biased and the junction between said second and third layers is forward-biased, and means for directing an electron beam onto said first layer to cause current to flow through said junctions causing laser light to be emitted from the region of said forward-biased junction.

Claim 3

The semiconductor laser of claim 1 wherein said second layer has a graded bandgap.

Claim 4

The semiconductor laser of claim 1 wherein said three layers are GaAs.

Claim 5

The semiconductor laser of claim 1 wherein opposite faces of the forward-biased junction are optically polished to form a Fabry-Perot cavity.

Claim 6

The semiconductor laser of claim 1 wherein the electron beam is modulated at video frequencies to produce a video frequency modulated laser beam output.

Claim 7

Apparatus for producing a laser beam comprising: means for emitting a beam of electrons into an evacuated space; means for controlling the flow of said electron beam; means for accelerating the speed of the electrons in said beam; and target means for receiving the beam of electrons and for producing coherent monochromatic light in response thereto, said target means being a unitary three-layered member which includes semiconductor diode means for generating an amplified flow of electrons in response to said electron beam and lasing semiconductor diode means for generating said light in response to said amplified flow of electrons, said target means having first, second and third layers forming first and second junctions respectively, said first and third layers being of p+ type semiconductor material and said second layer being of n type semiconductor material, said first layer facing the electron beam emitting means, said first and second layers comprising a GEISHA diode which constitutes the electron flow generating means, said second and third layers comprising the injection laser diode, and said laser-light generating means comprising an injection laser diode.

Claim 8

Apparatus for producing a laser beam comprising: means for emitting a beam of electrons into an evacuated space; means for controlling the flow of said electron beam; means for accelerating the speed of the electrons in said beam; and target means for receiving the beam of electrons and for producing coherent monochromatic light in response thereto, said target means being a unitary three-layered member which includes semiconductor diode means for generating an amplified flow of electrons in response to said electron beam and lasing semiconductor diode means for generating said light in response to said amplified flow of electrons, said target means having first, second and third layers forming first and second junctions respectively, said first and third layers being of p+ type semiconductor material and said second layer being of n type semiconductor material, said first layer facing the electron beam emitting means, said first and second layers comprising a GEISHA diode which constitutes the electron flow generating means, said second and third layers comprising the injection laser diode, and said laser-light generating means comprising an injection laser diode.

Claim 9

The apparatus of claim 6 wherein said said first layer is substantially transparent to energetic electrons.

Claim 10

The apparatus of claim 7 wherein the n type material has a lower bandgap adjacent the first junction than it has adjacent the second junction.

Claim 11

The apparatus of claim 7 wherein said electronbeam flow-controlling means comprises a grid disposed between the electron emitting means and the target.