Transistor amplifier

Claim 2

A transistor amplifier comprising: a transistor having an input electrode for receiving an input signal and first and second output electrodes; a field effect transistor having triode-type dynamic characteristics, the gate electrode of said field effect transistor being coupled to one output electrode of said transistor for receiving a voltage and the source and drain electrodes of said field effect transistor being connected to a load impedance; power supply means including first means for supplying a first operating voltage to said one output electrode of said transistor and second means for supplying a second operating voltage to said field effect transistor; and voltage control means coupled to said first and second means and responsive to fluctuations in said second operating voltage for causing said first operating voltage to change such that said voltage received by said gate electrode is correspondingly modified to thereby stabilize a bias current flowing through said field effect transistor, notwithstanding said second operating voltage fluctuations.

Claim 3

A transistor amplifier in accordance with claim 1 wherein said transistor and said field effect transistor are of opposite conductivity types and said field effect transistor is connected to said impedance in drain follower configuration.

Claim 4

A transistor amplifier in accordance with claim 1 wherein said first means is connected to said transistor one output electrode by a resistor such that said changes in said first operating voltage are applied to said gate electrode through said resistor.

Claim 5

A transistor amplifier in accordance with claim 1 wherein said voltage control means comprises means for causing said first operating voltage to change by an amount which is a function of the amplification constant of said field effect transistor.

Claim 6

A transistor amplifier in accordance with claim 4 wherein said last-mentioned means causes said first operating voltage to change ΔV 1 in response to a fluctuation ΔV 2 in said second operating voltage such that ΔV 1 =(1+1/μ)ΔV 2 , where μ is the amplification constant of said field effect transistor.

Claim 7

A transistor amplifier in accordance with claim 1 wherein said voltage control means comprises a control transistor having its collector-emitter circuit connected between said first and second means; and a bias circuit including a constant voltage source coupled to the base electrode of said control transistor and supplied with said first operating voltage.

Claim 8

A transistor amplifier in accordance with claim 6 wherein said bias circuit comprises a series circuit connected between said first means and a reference potential and including, in order, a first resistor, said constant voltage source and a second resistor; and wherein the ratio of the resistance values of said first and second resistors is equal to the reciprocal of the amplification constant of said field effect transistor.

Claim 9

A transistor amplifier in accordance with claim 6 wherein said voltage control means further comprises a regulating transistor having its collector-emitter circuit connected in series between said first means and said first-mentioned transistor to supply said first operating voltage.

Claim 10

A transistor amplifier in accordance with claim 1 wherein said transistor and said field effect transistor comprise one stage of a push-pull amplifier, said push-pull amplifier including a complementary stage comprised of: a second transistor having an input electrode for receiving an input signal and first and second output electrodes; a second field effect transistor having triode-type dynamic characteristics, the gate electrode of said second field effect transistor being coupled to one output electrode of said second transistor for receiving a voltage and the source and drain electrodes of said second field effect transistor being connected to said load impedance; third means for supplying a third operating voltage to said one output electrode of said second transistor and fourth means for supplying a fourth operating voltage to said second field effect transistor; and second voltage control means coupled to said third and fourth means and responsive to fluctuations in said fourth operating voltage for causing said third operating voltage to change such that said voltage received by said second field effect transistor gate electrode is correspondingly modified to thereby stabilize a bias current flowing through said second field effect transistor, notwithstanding said fourth operating voltage fluctuations.

Claim 11

A transistor amplifier comprising: first and second voltage sources each having a pair of terminals; first and second transistors having base electrodes supplied with an input signal to be amplified, collector electrodes coupled to respective terminals of said first voltage source through first and second impedances, and emitter electrodes connected to each other; first and second field effect transistors each having triode-type dynamic characteristics, and including source electrodes connected to respective terminals of said second voltage source, gate electrodes connected to respective collector electrodes of said first and second transistors, and drain electrodes connected to each other and to a reference potential through a load; first voltage control means connected between one terminal of said first voltage source and one terminal of said second voltage source to inject a portion of a voltage fluctuation of said second voltage source through said first impedance into the gate electrode of said first field effect transistor to stabilize a DC biasing current flowing through said first field effect transistor notwithstanding the voltage fluctuation of said second voltage source; and second voltage control means connected between the other terminal of said first voltage source and the other terminal of said second voltage source to inject a portion of a voltage fluctuation of said second voltage source through said second impedance into the gate electrode of said second field effect transistor to stabilize a DC biasing current flowing through said second field effect transistor notwithstanding the voltage fluctuation of said second voltage source.

Claim 12

A transistor amplifier comprising: first and second voltage sources each having a pair of terminals; first and second transistors having base electrodes supplied with an input signal to be amplified, collector electrodes coupled to respective terminals of said first voltage source through first and second impedances, and emitter electrodes connected to each other; first and second field effect transistors each having triode-type dynamic characteristics, and including source electrodes connected to respective terminals of said second voltage source, gate electrodes connected to respective collector electrodes of said first and second transistors, and drain electrodes connected to each other and to a reference potential through a load; first voltage control means connected between one terminal of said first voltage source and one terminal of said second voltage source to inject a portion of a voltage fluctuation of said second voltage source through said first impedance into the gate electrode of said first field effect transistor to stabilize a DC biasing current flowing through said first field effect transistor notwithstanding the voltage fluctuation of said second voltage source; and second voltage control means connected between the other terminal of said first voltage source and the other terminal of said second voltage source to inject a portion of a voltage fluctuation of said second voltage source through said second impedance into the gate electrode of said second field effect transistor to stabilize a DC biasing current flowing through said second field effect transistor notwithstanding the voltage fluctuation of said second voltage source.

Claim 13

A transistor amplifier according to claim 10, wherein the voltage injected into said gate electrode of said first field effect transistor is equal to ΔV G1 in response to a voltage fluctuation appearing at said one terminal of said second voltage source equal to ΔV 2 , and wherein the voltage injected into said gate electrode of said second field effect transistor is equal to ΔV G2 in response to a voltage fluctuation appearing at said other terminal of said second voltage source equal to ΔV' 2 , said injected voltages being defined in accordance with: ΔV.sub.G1 = (1 + 1/μ1)ΔV.sub.2 Δv.sub.g2 = (1 + 1/μ2)Δv'.sub.2 wherein μ 1 and μ 2 are the amplification constants of said first and second field effect transistors, respectively.

Claim 14

A transistor amplifier according to claim 11 wherein said first and second transistors are of opposite conductivity and said first and second field effect transistors are complementary to said first and second transistor conductivities, respectively.

Claim 15

A transistor amplifier according to claim 11 wherein each of said first and second transistors is connected in grounded emitter configuration, and each of said first and second field effect transistors is connected in drain follower configuration.

Claim 16

A transistor amplifier according to claim 13 wherein the base electrodes of said first and second transistors are connected to a DC biasing circuit comprising: a constant voltage source having a pair of terminals; a voltage divider connected across the terminals of said constant voltage source and including a variable resistor; and circuit means for supplying the voltage across said variable resistor to the base electrodes of said first and second transistors; whereby the corresponding DC biasing currents of said first and second transistors are adjustable in accordance with an adjustment of said variable resistor.

Claim 17

A transistor amplifier according to claim 14 wherein said constant voltage source comprises series connected diodes and current source means for supplying a current to said series connected diodes.

Claim 18

A transistor amplifier according to claim 15 further including a class-A amplifier for amplifying an input signal and for supplying the amplified signal to the base electrode of said first and second transistors in the same polarity.

Claim 19

A transistor amplifier according to claim 10 wherein each of said first and second voltage control means comprises: a control transistor having its collector and emitter electrodes connected between corresponding terminals of said first and second voltage sources; and a series circuit including, in order, a resistor, a constant voltage source and another resistor, the series circuit being connected between the reference point and a corresponding terminal of said first voltage source, the junction of said other resistor and said constant voltage source being connected to the base electrode of said control transistor; whereby the voltage fluctuations appearing at the corresponding terminal of said second voltage source are injected into the corresponding terminal of said first voltage source by a ratio determined by the resistance values of said resistor and said other resistor to stabilize the DC biasing currents flowing through said first and second field effect transistors, respectively.

Claim 20

A transistor amplifier according to claim 17 wherein the control transistors included in said first and second voltage control means are of opposite conductivity types.

Claim 21

A transistor amplifier according to claim 17 wherein the resistance values of said resistor and said other resistor included in said first and second voltage control means are in the ratios 1/μ1 and 1/μ2, respectively, μ 1 and μ 2 being the amplification constants of said first and second field effect transistors, respectively.

Claim 22

A transistor amplifier according to claim 17 wherein said constant voltage source comprises a zener diode.

Claim 23

A transistor amplifier according to claim 17 wherein each of said voltage control means further includes a regulating transistor having its collector and emitter electrodes connected in series with a corresponding terminal of said first voltage source and its base electrode connected to its collector electrode through a further resistor and to the collector electrode of said control transistor.