US3957547A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for doping semiconductors in centrifuge
Assignee: Beckman Instruments GmbH
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Filing: 1974-04-08
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Granted: 1976-05-18
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Expires: 1994-04-08
Abstract
Abstract A semiconductor material is doped or alloyed under vacuum with an impurity by thermal decomposition and by sedimentation resulting from centrifugal force. The doping material is alternatively applied by evaporation before being subjected to centrifugal force and may be heated up to the melting point before completion of the centrifugal action. A centrifuge is provided having a thermal insulating layer between the outer wall of a rotor and a support for basic semiconductor material to be doped. The doping impurity material to be evaporated onto the basic solid state material is placed in the center of the centrifuge rotor.
Inventors
- 👤 Paul Schmider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:07
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/02; H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S118/00; Y10S118/90
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
71 words
A method of incorporating an impurity substance in a solid state basic material by doping or alloying semiconductor basic material with impurity substance in the form of atoms, molecules or ions wherein the improvement comprises subjecting the impurity substance to be incorporated to high gravitational acceleration acting against the solid state basic material whereby incorporation of the impurity substance into the solid state basic material is accomplished by solid state sedimentation.
Claim 2
Independent Claim
71 words
A method of incorporating an impurity substance in a solid state basic material by doping or alloying semiconductor basic material with impurity substance in the form of atoms, molecules or ions wherein the improvement comprises subjecting the impurity substance to be incorporated to high gravitational acceleration acting against the solid state basic material whereby incorporation of the impurity substance into the solid state basic material is accomplished by solid state sedimentation.
Claim 3
Dependent Claim
38 words
The method of claim 1 wherein the high gravitational acceleration is produced by centrifugal force acting upon the material to be incorporated while the impurity substance lies radially inward from the solid state basic material in contact therewith.
Claim 4
Dependent Claim
44 words
The method defined in claim 2 wherein the basic material has a radially outward supported side and the impurity substance is deposited on the surface radially inward from the support side of the basic material prior to subjecting the impurity substance to centrifugal force.
Claim 5
Dependent Claim
40 words
The method defined in claim 3 wherein a centrifuge rotor is provided for supporting the basic material and the impurity substance is deposited thereon in the interior of the centrifuge rotor by thermal decomposition of compounds of the impurity substance.
Claim 6
Dependent Claim
42 words
The method defined in claim 3 wherein a centrifuge rotor is provided for supporting the basic material and impurity substance to be deposited is mounted within the centrifuge rotor and there evaporated for deposition on the surface of the basic semiconductor material.
Claim 7
Dependent Claim
15 words
The method defined in claim 3 wherein the centrifugal action is carried out under vacuum.
Claim 8
Dependent Claim
23 words
The method defined in claim 6 wherein the predeposition of impurity substance on the solid state basic material is carried out under vacuum.
Claim 9
Dependent Claim
25 words
The method defined in claim 3 wherein the impurity substance deposited upon the solid state basic material is softened before termination of the centrifugal action.
Claim 10
Dependent Claim
17 words
The method defined in claim 8 wherein the softening of the impurity substance is accomplished by heating.
Claim 11
Dependent Claim
16 words
The method defined in claim 9 wherein the impurity substance is heated to its melting point.
Claim 12
Dependent Claim
13 words
The method defined in claim 9 wherein the impurity substance is electrically heated.
Claim 13
Dependent Claim
19 words
The method defined in claim 11 wherein the impurity substance is heated by the heat of electric current conduction.
Claim 14
Dependent Claim
15 words
The method defined in claim 11 wherein the impurity substance is heated by electromagnetic induction.
Claim 15
Dependent Claim
28 words
The method defined in claim 1 wherein solid state basic material is subjected to a magnetic field acting in a direction of the axis of the centrifuge rotor.
Claim 16
Dependent Claim
71 words
The method defined in claim 3 wherein a centrifuge rotor is utilized for supporting the basic material and wherein successively: the basic material is doped with impurity substance during high speed rotation of the centrifuge, then the impurity substance is alloyed with the basic material during rotation of the rotor at an intermediate speed, and thereafter connection whiskers are bonded to the impurity substance during lower speed rotation of the rotor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-18 | 1979-11-17 | 1980-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-18 | 1983-11-17 | 1984-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-18 | 1987-11-17 | 1988-05-18 | $7700.00 | Window Closed / Lapsed |