Method for fabricating a semiconductor structure

Claim 2

In a method for fabricating a semiconductor structure, providing a semiconductor body having a planar surface and having regions of first and second conductivity types extending to said surface, forming a layer of insulating material on the surface of the semiconductor body, forming openings in said layer of insulating material to expose portions of said regions extending to said surface and forming a lead structure on said layer of insulating material and extending into said openings to make contact with said portions of said regions, the forming of said lead structure including the step of electroforming a gold layer having a roughened surface with a roughness scale ranging from 10 to 20 microinches on the layer of insulating material.

Claim 3

A method as in claim 1 wherein said gold layer is formed to a thickness ranging from 3800 to 6000 Angstroms.

Claim 4

A method as in claim 1 wherein said gold layer is formed to a thickness ranging from 3800 to 4200 Angstroms.

Claim 5

In a method for fabricating a semiconductor structure, providing a semiconductor body having a planar surface and having regions of first and second conductivity types extending to said surface, forming a layer of insulating material on the surface of the semiconductor body, forming openings in said layer of insulating material to expose portions of said regions extending to said surface and forming a lead structure on said layer of insulating material and extending into said openings to make contact with said portions of said regions, the forming of said lead structure including the steps of electroforming a gold layer having a roughened surface with a roughness scale ranging from 10 to 20 microinches, depositing a layer of photoresist on said roughened surface of said gold layer, removing certain areas of the photoresist to provide a predetermined pattern overlying the layer of gold having a roughened surface, electroforming additional gold onto the roughened gold surface exposed through the pattern, removing the remaining photoresist, and stripping away the exposed portions of the gold layer having a roughened surface and any conducting materials below the same to provide a lead structure on the layer of insulating material conforming to the predetermined pattern.

Claim 6

In a method for fabricating a semiconductor structure, providing a semiconductor body having a planar surface and having regions of first and second conductivity types extending to said surface, forming a layer of insulating material on the surface of the semiconductor body, forming openings in said layer of insulating material to expose portions of said regions extending to said surface and forming a lead structure on said layer of insulating material and extending into said openings to make contact with said portions of said regions, the forming of said lead structure including the steps of electroforming a gold layer having a roughened surface with a roughness scale ranging from 10 to 20 microinches, depositing a layer of photoresist on said roughened surface of said gold layer, removing certain areas of the photoresist to provide a predetermined pattern overlying the layer of gold having a roughened surface, electroforming additional gold onto the roughened gold surface exposed through the pattern, removing the remaining photoresist, and stripping away the exposed portions of the gold layer having a roughened surface and any conducting materials below the same to provide a lead structure on the layer of insulating material conforming to the predetermined pattern.

Claim 7

A method as in claim 4 wherein said layer of additional gold formed in said pattern is formed to a thickness ranging from 4 to 6 microns.

Claim 8

A method as in claim 4 wherein the forming of the lead structure includes the steps prior to forming of the gold layer having a roughened surface of providing a plurality of metal layers underlying the layer of gold having a roughened surface.

Claim 9

A method as in Claim 6 wherein the plurality of layers underlying the gold layer having a roughened surface comprise a layer of titanium, a layer of platinum and a layer of gold.

Claim 10

A method as in Claim 7 wherein said layer of titanium has a thickness of approximately 1000 Angstroms, the layer of platinum has a thickness of approximately 3000 Angstroms and said layer of gold has a thickness of approximately 1000 Angstroms.

Claim 11

A method as in Claim 1 wherein the forming of the lead structure also includes the step of depositing a layer of photoresist on the roughened surface of the gold layer.