Abstract A word arrangement matrix memory of high bit density having a flux keeper is known in which a number of word lines provided on a flux keeper plate are mounted on the surface of a substrate on which a number of digit lines of magnetic strips each comprising a conductive strip coated with at least one ferromagnetic thin film is provided. In accordance with this invention, the digit lines comprises a plurality of straight sections disposed in parallel at regular spaces, corresponding digit lines of the respective sections being interconnected to one another in series or in parallel. The flux keeper plate has, on the surface facing the said surface of the substrate, a number of parallel column grooves facing the sections of the digit lines and a number of parallel row grooves intersecting at right angles with the column grooves. The word lines comprise a plurality of X lines and a plurality of Y lines, the X lines and the Y lines being arranged so that only a group of memory cells on one of the digit line sections facing a position of the column grooves is selected by current coincidence selection of one of the X lines and one of the Y lines.
A high bit density word arrangement matrix memory comprising: a flat substrate of insulating material; a plurality of straight sections of parallel digit lines disposed in parallel at regular intervals on a flat surface of the flat substrate, each of the digit lines comprising a conductive strip and at least one ferromagnetic thin film disposed thereon, corresponding digit lines of the respective straight sections being interconnected to one another; a magnetic flux keeper plate of magnetic material having a plurality of parallel column grooves and a plurality of parallel row grooves intersecting at right angles with the parallel column grooves, the magnetic flux keeper plate being mounted on the flat substrate so that the column grooves and the row grooves are adjacent the flat surface of the flat substrate; a plurality of X conductors each disposed in a corresponding adjacent pair of the row grooves and having portions disposed in the segments of all the column grooves between said corresponding adjacent pair of row grooves so that each of the portions of the X conductors disposed in said segments of the column grooves overlies a corresponding one of the straight sections of the digit lines; and a plurality of Y conductors each disposed in at least a corresponding one of the column grooves.
Claim 2
Dependent Claim
213 words
A high bit density word arrangement matrix memory comprising: a flat substrate of insulating material; a plurality of straight sections of parallel digit lines disposed in parallel at regular intervals on a flat surface of the flat substrate, each of the digit lines comprising a conductive strip and at least one ferromagnetic thin film disposed thereon, corresponding digit lines of the respective straight sections being interconnected to one another; a magnetic flux keeper plate of magnetic material having a plurality of parallel column grooves and a plurality of parallel row grooves intersecting at right angles with the parallel column grooves, the magnetic flux keeper plate being mounted on the flat substrate so that the column grooves and the row grooves are adjacent the flat surface of the flat substrate; a plurality of X conductors each disposed in a corresponding adjacent pair of the row grooves and having portions disposed in the segments of all the column grooves between said corresponding adjacent pair of row grooves so that each of the portions of the X conductors disposed in said segments of the column grooves overlies a corresponding one of the straight sections of the digit lines; and a plurality of Y conductors each disposed in at least a corresponding one of the column grooves.
Claim 3
Dependent Claim
26 words
A word arrangement matrix memory according to claim 1, in which the corresponding digit lines of the respective sections are interconnected to one another in series.
Claim 4
Dependent Claim
26 words
A word arrangement matrix memory according to claim 1, in which the corresponding digit lines of the respective sections are interconnected to one another in parallel.
Claim 5
Dependent Claim
42 words
A word arrangement matrix memory according to claim 1, in which each of the X lines are disposed in a meandering line pattern to alternately pass through respective portions of adjacent pairs of the corresponding row grooves and all the column grooves.
Claim 6
Dependent Claim
24 words
A word arrangement matrix memory according to claim 4, in which each of the Y lines is disposed in a single corresponding column groove.
Claim 7
Dependent Claim
28 words
A word arrangement matrix memory according to claim 4, in which each of the Y lines is disposed in a plurality of column grooves in a stepped pattern.