Continuous processing system

Claim 2

A manufacturing system for processing semiconductor substrates comprising: A. a plurality of processing stations having loading and unloading positions, each of said stations having means for performing different fixed processing operations on said substrates, B. a conveyor means for transporting individual ones of said substrates between and at any one of said work stations; C. means for transferring said individual ones of said substrates between said conveyor and said stations at their said loading and unloading positions; D. control means for said conveyor and transfer means for routing said substrates individually between any prescribed sequence of said stations for a corresponding prescribed series of processing operations, wherein E. said stations comprise means for performing a plurality of semiconductor processing operations from the group of epitaxial growth, metallization, photoresist pattern exposure, impurity diffusion, impurity drive-in, photoresist development, oxide etching, metal etching, photoresist stripping, formation of dielectric coatings, sputtering, ion implantations and photoresist coating operations.

Claim 3

The manufacturing system of claim 1 wherein at least one of said stations comprises means for sequentially cleaning said substrate, and deposition of a photoresist layer over said coating.

Claim 4

The manufacturing system of claim 1 wherein at least one of said stations includes means for applying a photoresist layer over said substrate as a final processing operation therein.

Claim 5

The manufacturing system of claim 3 wherein at least one of the remainder of said stations is adapted to receive said photoresist coated substrates, and comprises means for sequentially aligning and exposing the photoresist coating in a predetermined pattern specified in said prescribed sequence of processing operation.

Claim 6

The manufacturing system of claim 4 wherein at least one of another of said stations is adapted to receive said exposed photoresist coated substrate and includes means as an initial processing operation therein for developing said exposed resist to form a corresponding opening pattern to underlying portions of said substrate.

Claim 7

The manufacturing system of claim 5 wherein said another of said stations thereof includes means for applying a photoresist layer over said substrate as a final processing operation therein.

Claim 8

The manufacturing system of claim 5 wherein at least one another of said stations is adapted to receive a substrate with said exposed photoresist layer coated on a silicon oxide layer formed on said substrate and includes means as initial processing operations therein sequentially developing said photoresist to form a corresponding opening pattern to said silicon oxide layer, etching through said silicon oxide layer to underlying portions of said substrate, and stripping of the remaining portions of said photoresist layer from said silicon oxide layer.

Claim 9

The manufacturing system of claim 7 wherein said one another of said stations thereof includes means for applying a new photoresist layer over said substrate as a final processing operation therein, and means for performing at least one another semiconductor processing operation therein between said initial and final operation.

Claim 10

A manufacturing system for processing semiconductor substrates comprising: A. a conveyor means for transporting said substrates individually between and at any selected one of a plurality of locations along the path thereof; B. a plurality of processing stations at respective ones of said locations for performing semiconductor processing operations on said substrates, and having loading and unloading stations for corresponding feeding and discharging of individual ones of said substrates, with at least three required sequential ones of said stations having the first and third station disposed adjacent one end of said conveyor path and the second station of said sequence disposed adjacent the other end of said conveyor path; C. means for transferring said individual ones of said substrates between said conveyor and said stations at their said loading and unloading stations; D. control means for said conveyor and transfer means for routing said substrates individually between and at selected ones of a prescribed sequence of said stations for a corresponding sequence of processing operations therein, wherein E. said processing stations include means for performing a plurality of semiconductor processing operations from the group of oxide coating formation, epitaxial growth, metallization, photoresist pattern exposure, impurity diffusion, impurity drive-in, photoresist development, oxide etching, metal etching, photoresist dripping, formation of silicon nitride coatings, sputtering, ion implantations and photoresist coating operations.

Claim 11

A manufacturing system for processing semiconductor substrates comprising: A. a conveyor means for transporting said substrates individually between and at any selected one of a plurality of locations along the path thereof; B. a plurality of processing stations at respective ones of said locations for performing semiconductor processing operations on said substrates, and having loading and unloading stations for corresponding feeding and discharging of individual ones of said substrates, with at least three required sequential ones of said stations having the first and third station disposed adjacent one end of said conveyor path and the second station of said sequence disposed adjacent the other end of said conveyor path; C. means for transferring said individual ones of said substrates between said conveyor and said stations at their said loading and unloading stations; D. control means for said conveyor and transfer means for routing said substrates individually between and at selected ones of a prescribed sequence of said stations for a corresponding sequence of processing operations therein, wherein E. said processing stations include means for performing a plurality of semiconductor processing operations from the group of oxide coating formation, epitaxial growth, metallization, photoresist pattern exposure, impurity diffusion, impurity drive-in, photoresist development, oxide etching, metal etching, photoresist dripping, formation of silicon nitride coatings, sputtering, ion implantations and photoresist coating operations.

Claim 12

The manufacturing system of claim 9 wherein at least one of said stations includes means for sequentially cleaning said substrate, formation of an oxide coating on said substrate, and deposition of a photoresist layer over said coating.

Claim 13

The manufacturing system of claim 9 wherein at least one of said stations includes means for applying a photoresist layer over said substrate as a first processing operation therein.

Claim 14

The manufacturing system of claim 11 wherein at least one of the remainder of said stations as adapted to receive said photoresist coated substrates, and comprises means for sequentially aligning and exposing the photoresist coating in a predetermined pattern specified in said prescribed sequence of processing operation.

Claim 15

The manufacturing system of claim 12 wherein at least one of another of said stations is adapted to receive said exposed photoresist coated substrate, and includes means, as initial processing operations therein, for developing said exposed resist to form a corresponding opening pattern to underlying portions of said substrate.

Claim 16

The manufacturing system of claim 12 wherein said another of said stations thereof includes means for applying a photoresist layer over said substrate as a final processing operation therein.

Claim 17

The manufacturing system of claim 12 wherein at least one another of said stations is adapted to receive a substrate with said exposed photoresist layer coated on a silicon oxide layer formed on said substrate and includes means as an initial processing operation therein sequentially developing said photoresist to form a corresponding opening pattern to said silicon oxide layer, etching through and said silicon oxide layer to underlying portions of said substrate, and stripping of the remaining portions of said photoresist layer.

Claim 18

The manufacturing system of claim 15 wherein said one another of said stations thereof includes means for applying a new photoresist layer over said substrate as a final processing operation therein, and means for performing at least one other semiconductor processing operation therein between said initial and final operation.