US3946423A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Opto-coupler
Assignee: Motorola Solutions Inc
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Filing: 1974-05-02
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Granted: 1976-03-23
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Expires: 1994-05-02
Abstract
Abstract An opto-coupler for isolating electrical signals constituted by an electrically responsive radiation source or emitting device, such as a light emitting diode (LED), optically coupling to a radiation sensitive detector for generating an electrical output in response to an electrical signal applied to the radiation source. The detector includes a PN junction positioned within a semiconductor body for generating maximum output current at high switching speeds with attendant minimization of capacitance. Increased values of detector current generation allow economical, reliable, and uncomplicated integrated circuit amplifying means to be responsive to the generated detector output current for generating increased current and voltage output signals, for example, TTL compatible, without speed degradation and readily implementable on a single small semiconductor integrated circuit chip or substrate. The detector chip and radiation or light emitting diode source can be readily mounted in an electronic package to provide an inexpensive opto-coupler unit.
Inventors
- 👤 Lawrence G. Augustine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:32
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F55/25; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
129 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current comprising: a. a body of semiconductor material for receiving the incident radiation at a first surface; b. said body comprising a substrate of a first conductivity type and an overlying layer of opposite conductivity type, said substrate having second and third surfaces separated from said first surface, said second surface being disposed intermediate to said first and third surfaces; c. a subsurface PN junction detector means located at approximately said second surfaces coupled to a reverse bias supply means for absorbing substantially all incident radiation and generating an output current; d. at least a first active device having active regions disposed in said overlying layer and coupled to said subsurface PN junction.
Claim 2
Dependent Claim
129 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current comprising: a. a body of semiconductor material for receiving the incident radiation at a first surface; b. said body comprising a substrate of a first conductivity type and an overlying layer of opposite conductivity type, said substrate having second and third surfaces separated from said first surface, said second surface being disposed intermediate to said first and third surfaces; c. a subsurface PN junction detector means located at approximately said second surfaces coupled to a reverse bias supply means for absorbing substantially all incident radiation and generating an output current; d. at least a first active device having active regions disposed in said overlying layer and coupled to said subsurface PN junction.
Claim 3
Dependent Claim
41 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 1 wherein: a. said substrate comprises a P type conductivity material, and said overlying layer comprises a N type conductivity material.
Claim 4
Dependent Claim
49 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 2 further including: a. isolating regions extending from said first surface to said second surface for electrically isolating said subsurface PN junction detector means from said first active device.
Claim 5
Dependent Claim
30 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 3 wherein: a. said overlying layer is an epitaxial layer.
Claim 6
Dependent Claim
53 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 4 wherein: a. said first active device comprises an NPN transistor having a collector region constituted by a portion of said epitaxial layer and base and emitter regions disposed in said epitaxial layer.
Claim 7
Dependent Claim
55 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 5 further including: a. an N type contact region disposed into said epitaxial layer for providing a low electrical resistance contact to said subsurface PN junction detector means for coupling to said first active device.
Claim 8
Dependent Claim
44 words
An integrated circuit detector means responsive to an incident radiation supply means for generating an output current as in claim 6 further including: a. a plurality of other active and passive devices disposed in said epitaxial layer coupled to said PN junction detector means.
Claim 9
Dependent Claim
86 words
A detector means responsive to an incident radiation supply means for generating an output current comprising: a. a substrate of a first conductivity type; b. an epitaxial layer of opposite conductivity type disposed over said substrate for forming a subsurface PN junction detector means; c. means coupled to said PN junction detector means for reverse biasing said subsurface PN junction detector means; and d. said substrate and epitaxial layer constituting first and second active regions for generating the output current in response to the incident radiation.
Claim 10
Dependent Claim
86 words
A detector means responsive to an incident radiation supply means for generating an output current comprising: a. a substrate of a first conductivity type; b. an epitaxial layer of opposite conductivity type disposed over said substrate for forming a subsurface PN junction detector means; c. means coupled to said PN junction detector means for reverse biasing said subsurface PN junction detector means; and d. said substrate and epitaxial layer constituting first and second active regions for generating the output current in response to the incident radiation.
Claim 11
Dependent Claim
39 words
A detector means response to an incident radiation supply means for generating an output current as in claim 8 wherein: a. said substrate comprises a P type conductivity material and said epitaxial layer comprises a N type conductivity material.
Claim 12
Dependent Claim
46 words
A detector means responsive to an incident radiation supply means for generating an output current as in claim 9 further including: a. active and passive devices disposed in said epitaxial layer and coupled to said PN junction detector means for forming an integrated circuit detector means.
Claim 13
Dependent Claim
47 words
A detector means responsive to an incident radiation supply means for generating an output current as in claim 10 further including: a. isolating regions extending through said epitaxial layer to said substrate for electrically isolating said subsurface PN junction detector means from said active and passive devices.
Claim 14
Dependent Claim
54 words
A detector means responsive to an incident radiation supply means for generating an output current as in claim 11 wherein: a. said epitaxial layer includes an N type contact region disposed therein for providing a low electrical resistance contact to said subsurface PN junction detector means for interconnection to said active and passive devices.
Claim 15
Dependent Claim
56 words
A detector means responsive to an incident radiation supply means for generating an output current as in claim 12 further including: a. terminal means coupled to said substrate; b. said terminal means and said N type contact region receiving the output current from said subsurface PN junction detector means for driving said active and passive devices.
References Cited (Backward Citations)
US3532945A
Cited
US3836793A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-23 | 1979-09-22 | 1980-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-23 | 1983-09-22 | 1984-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-23 | 1987-09-22 | 1988-03-23 | $7700.00 | Window Closed / Lapsed |