US3946416A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low impedance diode mounting structure and housing
Assignee: United States Department of the Army
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Filing: 1974-06-04
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Granted: 1976-03-23
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Expires: 1994-06-04
Abstract
Abstract A low impedance laser diode mounting structure in which the inductive reance and the capacitive reactance are balanced to leave only the pure resistance in the input to a diode. The low impedance laser diode mounting structure comprises a large diameter, conductive central electrode of one potential separated from a conductive housing of the opposite potential by a layer of insulation, such as glass frit. The width of the insulation layer is such that the capacitive reactance caused by the capacitance included between the input electrode, which is generally of positive potential, and the housing, which is usually at ground potential, is equal to the inductive reactance included in the short lead of the input electrode. The input electrode and housing may be made of copper, brass or other high conductivity metals. One side of the diode is mounted on a heat sink that is electrically connected to the housing. A short lead, made of copper or gold, connects the input electrode to the other side of the diode.
Inventors
- 👤 Michael Hacskaylo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:55
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/02208; H01S5/02212
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
213 words
A low input impedance mounting structure and housing for a high power laser diode driven at high frequency and short pulse widths at room temperature comprising: an electron injection high power laser diode of the gallium aluminum arsenide single heterojunction and close confinement structure, said high power laser diode having a first side and a second side; a high frequency and short pulse width power source; a large diameter highly conductive central electrode which is connected to said power source at one end and having said first side of the high power laser diode electrically connected to a heat sink at the other end thereof; a thin insulator layer contiguous with and surrounding said highly conductive central electrode; a conductive housing that is electrically grounded and is contiguous with said insulator layer, said conductive housing having a transparent window along the optical axis of said high power laser diode; and a short electrical lead connected between said conductive housing and said second side of the high power laser diode whereby said thin insulator layer is of such a size when compared with the large diameter highly conductive central electrode as to minimize the capacitive reactance and balance with the inductive reactance between said central electrode and said housing to provide minimum input impedance.
Claim 2
Dependent Claim
213 words
A low input impedance mounting structure and housing for a high power laser diode driven at high frequency and short pulse widths at room temperature comprising: an electron injection high power laser diode of the gallium aluminum arsenide single heterojunction and close confinement structure, said high power laser diode having a first side and a second side; a high frequency and short pulse width power source; a large diameter highly conductive central electrode which is connected to said power source at one end and having said first side of the high power laser diode electrically connected to a heat sink at the other end thereof; a thin insulator layer contiguous with and surrounding said highly conductive central electrode; a conductive housing that is electrically grounded and is contiguous with said insulator layer, said conductive housing having a transparent window along the optical axis of said high power laser diode; and a short electrical lead connected between said conductive housing and said second side of the high power laser diode whereby said thin insulator layer is of such a size when compared with the large diameter highly conductive central electrode as to minimize the capacitive reactance and balance with the inductive reactance between said central electrode and said housing to provide minimum input impedance.
Claim 3
Dependent Claim
47 words
A low input impedance mounting structure and housing as set forth in claim 1 wherein said large diameter highly conductive central electrode is 0.125 inch in diameter and the inside diameter of said conductive housing is 0.25 inch and said short electrical lead is 0.004 inch diameter.
Claim 4
Dependent Claim
34 words
A low input impedance mounting structure and housing as set forth in claim 2 wherein said large diameter highly conductive central electrode, said conductive housing, and said short electrical lead are made of copper.
Claim 5
Dependent Claim
37 words
A low input impedance mounting structure and housing as set forth in claim 3 wherein said power source produces pulses to said high power laser diode at 5 kilo-Hertz frequency and 70 to 150 nanoseconds pulse widths.
Claim 6
Dependent Claim
21 words
A low input impedance mounting structure and housing as set forth in claim 4 wherein said insulator layer is glass frit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-23 | 1979-09-22 | 1980-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-23 | 1983-09-22 | 1984-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-23 | 1987-09-22 | 1988-03-23 | $7700.00 | Window Closed / Lapsed |