US3944950A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Quasi-optical integrated circuits
Assignee: United States Department of the Army
•
Filing: 1974-09-30
•
Granted: 1976-03-16
•
Expires: 1994-09-30
Abstract
Abstract A quasi-optical integrated circuit which makes use of a high resistivity k single crystal intrinsic semiconductor as a low loss quasi-optical wave transmission medium for millimeter and submillimeter waves having one or more circuit elements or devices disposed either at or near the surface of a portion of the semiconductor, or formed within a portion of either the semiconductor transmission medium or a portion of a high resistivity single crystal intrinsic semiconductor appendage to said semiconductor transmission medium. By varying the potential applied to said elements or devices, one can control either the phase or the amplitude of quasi-optical wave propagation along the semiconductor waveguide; moreover, solid state devices such as quasi-optical generators, mixers and detectors can be formed within the semiconductor wave transmission medium itself. Quasi-optical generators also can be obtained by inserting a negative resistance device in an aperture disposed within a cavity resonator which is made of a material of high dielectric constant and high resistivity.
Inventors
- 👤 Harold Jacobs
- 👤 Metro M. Chrepta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:27
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/18; H01P1/185; H01P1/22; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03C; H03C7/00; H03C7/02; H03C7/025; H03C7/027; H03D; H03D9/00; H03D9/06; H03G; H03G1/00; H03G1/0005; H03G1/0035; H03B2009/126
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
85 words
In combination, a quasi-optical energy waveguide consisting entirely of a bulk single crystal intrinsic semiconductor waveguiding medium of high resistivity for propagating millimeter and submillimeter wave energy in the fundamental mode, at least one electrical circuit element disposed at a portion of said medium, and wave energy propagation control means including means for supplying a unidirectional forward biasing voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said portion of said medium.
Claim 2
Dependent Claim
85 words
In combination, a quasi-optical energy waveguide consisting entirely of a bulk single crystal intrinsic semiconductor waveguiding medium of high resistivity for propagating millimeter and submillimeter wave energy in the fundamental mode, at least one electrical circuit element disposed at a portion of said medium, and wave energy propagation control means including means for supplying a unidirectional forward biasing voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said portion of said medium.
Claim 3
Dependent Claim
39 words
The combination of claim 1 wherein said circuit element includes a pair of juxtaposed electrically conductive point contact electrodes mounted on opposite surfaces of said portion of said medium and wherein said electrodes are connected across said voltage supply.
Claim 4
Dependent Claim
14 words
The combination of claim 2 wherein said unidirectional voltage is a forward biasing voltage.
Claim 5
Dependent Claim
39 words
The combination of claim 1 wherein said circuit element includes juxtaposed doped regions of opposite conductivity type formed within opposite major surfaces of said portion of said medium and wherein said doped regions are connected across said supply voltage.
Claim 6
Dependent Claim
29 words
The combination of claim 4 further including means for supplying an amplitude modulating signal in series with said supply voltage to amplitude modulate the energy propagating along said medium.
Claim 7
Dependent Claim
14 words
The combination of claim 4 wherein said unidirected voltage is a forward biasing voltage.
Claim 8
Dependent Claim
41 words
The combination of claim 1 wherein said circuit element includes an electrically conductive member positioned adjacent said portion of said medium and connected to said supply voltage means, said semiconductive member being spaced from said medium by an electrically insulating means.
Claim 9
Dependent Claim
49 words
The combination of claim 1 wherein said element includes a plurality of spaced doped regions of alternating opposite conductivity type formed within said medium near one surface thereof and wherein said doped regions of opposite conductivity type are connected to portions of said supply voltage means of opposite polarity.
Claim 10
Dependent Claim
27 words
The combination of claim 1 wherein said waveguiding medium contains a plurality of branches only one of which is subject to said wave energy propagation control means.
Claim 11
Dependent Claim
17 words
The combination of claim 4 wherein said electric circuit element is a detector of quasi-optical wave energy.
Claim 12
Dependent Claim
17 words
The combination of claim 1 further including a detector of quasi-optical wave energy formed within said medium.
Claim 13
Dependent Claim
42 words
The combination of claim 1 wherein said waveguiding medium contains a plurality of intercoupled branches each receptive of quasi-optical wave energy from separate sources and wherein said electrical circuit element is a mixer formed within said media at the region of intercoupling.
Claim 14
Dependent Claim
88 words
In combination, a waveguiding medium for propagating quasi-optical wave energy, an appendage mounted on a portion of said medium, said waveguiding medium and said appendage each consisting entirely of a bulk single crystal intrinsic semiconductor of high resistivity and high dielectric constant, at least one electric circuit element formed within said appendage and wave energy propagation control means including means for supplying a unidirectional voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said appendage.
Claim 15
Dependent Claim
88 words
In combination, a waveguiding medium for propagating quasi-optical wave energy, an appendage mounted on a portion of said medium, said waveguiding medium and said appendage each consisting entirely of a bulk single crystal intrinsic semiconductor of high resistivity and high dielectric constant, at least one electric circuit element formed within said appendage and wave energy propagation control means including means for supplying a unidirectional voltage to said element for controlling the propagation through said medium of said wave energy in response to conductivity variations produced within said appendage.
Claim 16
Dependent Claim
18 words
The combination of claim 13 wherein said waveguiding medium and said appendage is substantially of rectangular cross section.
Claim 17
Dependent Claim
44 words
The combination of claim 14 wherein said circuit element includes spaced elongated doped regions of opposite conductivity type formed within said appendage along opposed edges of the exposed major surface of said appendage and wherein said doped regions are connected across said supply voltage.
Claim 18
Dependent Claim
39 words
The combination according to claim 14 wherein said circuit element includes spaced doped regions of opposite conductivity type formed within said appendage along opposite sides of said appendage and wherein said doped regions are connected across said supply voltage.
Claim 19
Dependent Claim
53 words
The combination of claim 13 wherein said waveguiding medium is substantially rectangular cross section and said appendage is of substantially triangular cross section, and wherein spaced doped regions of opposite conductivity type are formed in the slanting exposed surfaces of said appendage and wherein said doped regions are connected across said supply voltage.
Claim 20
Dependent Claim
52 words
The combination of claim 14 wherein said circuit element includes a plurality of transversely disposed spaced doped regions of alternating opposite conductivity type formed within said appendage near one surface thereof and wherein said doped regions of opposite conductivity type are connected to portions of said supply voltage means of opposite polarity.
Claim 21
Dependent Claim
17 words
The combination of claim 13 further including at least one active circuit device formed within said medium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-16 | 1979-09-15 | 1980-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-16 | 1983-09-15 | 1984-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-16 | 1987-09-15 | 1988-03-16 | $7700.00 | Window Closed / Lapsed |