US3944684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for depositing transparent, electrically conductive tin containing oxide coatings on a substrate
Assignee: RCA Corp
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Filing: 1974-05-22
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Granted: 1976-03-16
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Expires: 1994-05-22
Abstract
Abstract Certain volatile organotin compounds are vaporized in a heated carrier gas stream and brought into contact with a preheated substrate to be coated in an atmosphere containing oxygen. Indium oxide coatings may be doped with tin by vaporizing an organotin compound and an indium chelate of a β-diketone and bringing the vapors in contact with a heated substrate in an oxidizing atmosphere.
Inventors
- 👤 James Kane
- 👤 Hanspeter Schweizer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 03:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/407; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/245; C03C17/2453
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
67 words
The process of depositing an oxide coating containing tin and indium on a substrate which comprises: a. vaporizing an indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione, b. vaporizing an organotin compound having a vaporization temperature below about 200°C., c. heating said substrate to a temperature of from about 350°C. to about 550°C., and d. contacting said heated substrate with said indium vapor and said tin vapor in an oxidizing atmosphere.
Claim 2
Dependent Claim
67 words
The process of depositing an oxide coating containing tin and indium on a substrate which comprises: a. vaporizing an indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione, b. vaporizing an organotin compound having a vaporization temperature below about 200°C., c. heating said substrate to a temperature of from about 350°C. to about 550°C., and d. contacting said heated substrate with said indium vapor and said tin vapor in an oxidizing atmosphere.
Claim 3
Dependent Claim
23 words
The process of claim 1 wherein said indium chelate is vaporized by heating at a temperature of from about 180° to about 250°C.
Claim 4
Dependent Claim
22 words
The process of claim 2 wherein said indium chelate is vaporized by heating at a temperature of between about 200° to 250°C.
Claim 5
Dependent Claim
34 words
The process of claim 1 wherein the organotin compound is selected from the group consisting of (R) 2 Sn--OOCR) 2 and (R 3 Sn) 2 O compounds wherein R is a lower alkyl group.
Claim 6
Dependent Claim
22 words
The process of claim 4 wherein said organotin compound is vaporized by heating to a temperature from about 80° to about 200°C.
Claim 7
Dependent Claim
25 words
The process of claim 1 wherein said organotin compound is selected from a group comprising dibutyl tin diacetate, bis(tri-n-propyl) tin oxide and bis(tri-n-butyl) tin oxide.
Claim 8
Dependent Claim
16 words
The process of claim 1 wherein said substrate is heated to a temperature between about 450°C.
Claim 9
Dependent Claim
12 words
The process of claim 1 wherein said oxidizing atmosphere contains water vapor.
Claim 10
Dependent Claim
81 words
The process of depositing transparent, uniform, electrically conductive tin doped indium oxide coatings on a substrate comprising: a. vaporizing an indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione at a temperature of from about 180° to about 250°C., b. vaporizing dibutyl tin diacetate at a temperature of from about 80°C. to about 120°C., c. heating said substrate to a temperature of from about 350°C. to about 550°C., d. and contacting said heated substrate with said indium vapor and said tin vapor in an oxidizing atmosphere.
Claim 11
Dependent Claim
81 words
The process of depositing transparent, uniform, electrically conductive tin doped indium oxide coatings on a substrate comprising: a. vaporizing an indium chelate of 2,2,6,6-tetramethylheptane-3,5-dione at a temperature of from about 180° to about 250°C., b. vaporizing dibutyl tin diacetate at a temperature of from about 80°C. to about 120°C., c. heating said substrate to a temperature of from about 350°C. to about 550°C., d. and contacting said heated substrate with said indium vapor and said tin vapor in an oxidizing atmosphere.
Claim 12
Dependent Claim
12 words
The process of claim 9 wherein the oxidizing atmosphere contains water vapor.
Claim 13
Dependent Claim
37 words
The process of claim 9 wherein the substrate is a clear glass plate having a melting temperature above about 450°C. and said tin doped indium oxide film forms an electrode for use in a liquid crystal cell.
References Cited (Backward Citations)
US2694649A
Cited
US2567331A
Cited
US2740731A
Cited
US2617742A
Cited
US2833902A
Cited
US2932590A
Cited
US3107177A
Cited
US3705054A
Cited
US3647531A
Cited
US3663857A
Cited
US3658568A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-16 | 1979-09-15 | 1980-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-16 | 1983-09-15 | 1984-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-16 | 1987-09-15 | 1988-03-16 | $7700.00 | Window Closed / Lapsed |